Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    7964 MOSFET Search Results

    7964 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    7964 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    irfp321

    Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
    Text: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv PDF

    IRF 450 MOSFET

    Abstract: IRF N-Channel Power MOSFETs IRF230 IRF n CHANNEL MOSFET MOSFET IRF230 IRF231 IRF233 IRF MOSFET 100A 200v IRF232 mosfet n channel irf
    Text: 7964142 S A M SUNG SEM ICONDUCTOR,„IN C _98D 0 5094_ D T * 3 V l • • -HS D e | - “ :, 4LU. ! Q0GS0T4 i "-CHANNEL f IRF230/231Í232/233 POWER MOSFETS FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times


    OCR Scan     		7itm42 IRF230/23112321233 IRF230 IRF231 IRF232 IRF233 IRF 450 MOSFET IRF N-Channel Power MOSFETs IRF n CHANNEL MOSFET MOSFET IRF230 IRF MOSFET 100A 200v mosfet n channel irf PDF

    IRF450

    Abstract: mosfet IRF450 th414 IRF452 IRF250 IRF251 IRF252 IRF253 IRF451 Z047
    Text: I I fi _ ' 7 9 6 4 1 4 2 S A M S U N G S E M I C O N D U C T O R INC . DL j v T b m H E 0 0 0 5 1 4 4 S | 98D 05 144_ N-CHANNEL POWER MOSFETS IRF450/451/452/453 FEATURES Low RDS on at high voltage Improved inductive ruggedness Excellent high voltage stability


    OCR Scan     		0D0S14M IRF450/451/452/453 D05144 IRF250 IRF251 IRF252 IRF253 IRF450 IRF451 IRF452 mosfet IRF450 th414 Z047 PDF

    IRF130

    Abstract: irf131 142SA
    Text: 796 4 1 4 2 _ J Tfl SAMSUNG S E M I CONDÜCTOR DE I T T t i M l M S D0DS074 IN C 98D □ 05074 D T ^ -II N-CHANNEL POWER MOSFETS IRF130/131/132/133 FEA TU R E S LOW RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		D0DS074 IRF130/131/132/133 IRF130 IRF131 IRF132 IRF133 00US435 F--13 142SA PDF

    5109d

    Abstract: No abstract text available
    Text: 7 9 6 4 142 SAMSUNG SEMICONDUCTOR Ifl DE I 7 ^ 4 1 4 5 98D 0 51 09 TNO 0 0 0 5 1 0 e] 3 D f-rj?-// N-CHANNEL POWER MOSFETS IRF320/321/322/323 FEATURES • LOW RoS on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		000510e IRF320/321/322/323 IRF321 IRF322 IRF323 00GS435 5109d PDF

    Untitled

    Abstract: No abstract text available
    Text: 7964142 SAMSUNG S E M I C O N D U CTOR INC 98D 05204 N-CHANNEL ’ POWER MOSFETS , IRFP350/351/352/353 Tfl ImF FEATURES ^4145 □ G OSE □ 4 Ô Low Ros<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		IRFP350/351/352/353 IRFP250 IRFP251 IRFP252 IRFP253 IRFP350 IRFP351 IRFP352 IRFP353 00GS435 PDF

    Untitled

    Abstract: No abstract text available
    Text: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		IRF220/221/222/223 IRF220 IRF221 IRF222 IRF223 00GS435 F--13 PDF

    IRF330

    Abstract: IRF331 IRF332 IRF333 331z
    Text: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure


    OCR Scan     		0DDS114 IRF330/331Z332/333 IRF330 IRF331 IRF332 IRF333 331z PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF