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    SM25N

    Abstract: ssm25n40
    Text: SAMSUNG S E M I C ON DU CT OR INC . ‘ S S m I^ ^ Tfi’ DE | 7Tb414H DOOSBTB 4 ^ ^ ^ m ^N -C H A N N È L:^^ SSH25N35/25N40 POWER MOSFETS Preliminary Specifications 5 . PRODUCT SUMMARY 400 Volt, 0.25 Ohm SFET Part Number R D S on Id 350V ' 0.25 25A SSM25N40


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    PDF 7Tb414H SSH25N35/25N40 SSM25N35 SSM25N40 SSH25N35 SSH25N40 SSM25N35/25N40 SM25N

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    Abstract: No abstract text available
    Text: KMM372C412AK/A S DRAM MODULE KMM372C412AK/AS Fast Page Mode 4Mx72 DRAM DIMM with QCAS, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Sam sung KM M 372C412A is a 4M bit x 72 Dynam ic RAM high density m em ory module. The KMM372C412A - 5


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    PDF KMM372C412AK/A KMM372C412AK/AS 4Mx72 372C412A KMM372C412A 300mil 110ns 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM44C268C 0G15S45 SO I « S P I C K CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS


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    PDF KM44C268C 0G15S45 KM44C268C KM44C268C-6 110ns KM44C268C-7 130ns KM44C268C-8 150ns KM44ress

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b^E D H TTbMlME 0014070 EbS « S N C K KM6466A/KM6466AL CMOS SRAM 1 6 K x 4 Bit Static RAM with OE FEATURES GENERAL DESCRIPTION • Fast Access Time: 25,35,45 ns (max.) • Low Power Dissipation Standby (TTL): 30m A (max.) (CMOS): 2mA (max.)


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    PDF KM6466A/KM6466AL 100/iA 120mA KM6466A/AL 536-bit

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICO ND UCTOR INC 02 D E « 7 ^ 4 1 4 5 DDDSbSfl 3 I 558 KS5113 D ; CMOS DIGITAL INTEGRATED CIRCUIT 3 HAND LCD ANALOG WATCH The KS5113 Is asilicon-gate CMOS LSI for 3-HAND analog LCD display watch. It provides three functions HOUR, MINUTE, SECOND .


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    PDF KS5113 KS5113 768Hz

    Untitled

    Abstract: No abstract text available
    Text: KM41C16002A/AI_/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16002A/AL/ALL/ASL is a high speed CMOS 16,777,216 bit x 1 Dynamic Random Access Memory. Its design is optim ized for high


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    PDF KM41C16002A/AI KM41C16002A/AL/ALL/ASL 6002A 130ns KM41C16002A/AL/ALL/ASL 24-LEAD

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    Abstract: No abstract text available
    Text: KM48C21OOA/AL/ALL/ASL CMOSDRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC KM48C2100A/AL/ALL/ASL-5 50ns 13ns 90ns KM48C2100A/AL/ALL/ASL-6 60ns 15ns 110ns KM48C2100A/AIVALL/ASL-7 70ns 20ns 130ns


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    PDF KM48C21OOA/AL/ALL/ASL KM48C2100A/AL/ALL/ASL-5 KM48C2100A/AL/ALL/ASL-6 110ns KM48C2100A/AIVALL/ASL-7 150ns 130ns KM48C2100A/AIVALL7ASL-8 b4142

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    Abstract: No abstract text available
    Text: S A M S U N G S E M I C O N D U C T O R INC 05 ii | 7ibm45 Qoatasa s r 052 D T - ‘ - t et KS54AHCT KS74AHCT ~S Arithmetic Logic Unit/ Function Generator 181 Preliminary Specifications FEATURES DESCRIPTION • A rith m etic operating modes: A ddition The '181 is an Arithmetic Logic Unit (ALU /Function


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    PDF 7ibm45 KS54AHCT KS74AHCT 7Tb414S 14-Pin

    Untitled

    Abstract: No abstract text available
    Text: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase


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    PDF KM29V64001T/R 200us

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,«W(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply


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    PDF KM6164000AL/AL-L 256Kx16 165mW KM6164000ALT/LT-L 44-TSOP2-4QOF KM6164000AL/L-L 304-bit I/O10 I/O16) 7Tb414H

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    Abstract: No abstract text available
    Text: SAMSUNG SEMI CON DU CT OR INC Ifl r DEI 7^4145 □□□4155 1 PRELIMINARY ¡ ‘ 5 / /¿ 7V c 2 ^ CMOS INTEGRATED CIRCUIT KS25C02/KS25C03/KS25C04 8-BIT AND 12-BIT CMOS SUCCESSIVE APPROXIMATION REGISTERS These are 8-bit and 12-bit CMOS registers designed for


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    PDF KS25C02/KS25C03/KS25C04 12-BIT KS25C02 KS25C03 KS25C04 KS25C02, KS25C04 KS25C03,