NTE2638
Abstract: No abstract text available
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector–Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
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NTE2638
250mA,
NTE2638
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Dow Corning DC 11
Abstract: NTE2638 npn darlington 400v 1.*a
Text: NTE2638 Silicon NPN Transistor Darlington Features: D High Voltage, High Forward and Clamped Reverse Energy D 10A Peak Collector Current D 80W at +25°C Case Temperature D Collector−Emitter Sustaining Voltage: 400V Min at 7A Absolute Maximum Ratings: TC = +25°C unless otherwise specifieid
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NTE2638
250mA
-250mA,
250mA,
250mA
Dow Corning DC 11
NTE2638
npn darlington 400v 1.*a
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MQBQ-270-28B
Abstract: No abstract text available
Text: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 230-400V 155-450V 28V 400W 95%@7A / 95%@14A Continuous Input Transient Input Output Output Efficiency O peration : -55ºC to The MilQor series of high-reliability DC-DC converters +125ºC brings SynQor's field proven high-efficiency synchronous
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MQBQ-270-28B
30-400V
55-450V
MQBQ-270-28B
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RTCA DO-160
Abstract: No abstract text available
Text: MQBQ-270-28B Single Output H igh R eliability DC-DC C onverter 155-450V 28V 400W 94.6%@7A / 95.4%@14A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 230-400V O peration : -55ºC to The MilQor series of high-reliability DC-DC converters
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MQBQ-270-28B
30-400V
55-450V
MQBQ-270-28B
RTCA DO-160
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Untitled
Abstract: No abstract text available
Text: Amphenol Circular Interconnects C 16-3 Circular Connector Bayonet Coupling – Plastic IP65 Designed to meet the high requirements of Industrial applications under harsh environment. Available in Screw and Crimp terminations. Materials Housing Dielectric Gasket
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NTE5427
Abstract: 7A 400v scr NTE5428 NTE5429
Text: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE5427
NTE5429
NTE5427
NTE5428
7A 400v scr
NTE5428
NTE5429
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NTE5427
Abstract: 7A 400v scr NTE5428 NTE5429
Text: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE5427
NTE5429
NTE5427
NTE5428
7A 400v scr
NTE5428
NTE5429
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C016
Abstract: C16-3 21A9
Text: Part Information: Part Number: C016 10C019 000 2 Description: Male receptacle, flange mounting with mounted gasket, 19+PE version without contacts Family: C16-3 Specifications Shell Size 2 Number of contacts 5+PE 12+PE 14+PE 19+PE Termination screw crimp crimp
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10C019
C16-3
C016
C16-3
21A9
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C016
Abstract: C16-3 60664-1 Polyamid
Text: Part Information: Part Number: C016 10G019 000 2 Description: Female receptacle, flange mounting with mounted gasket, 19+PE version without contacts Family: C16-3 Specifications Shell Size 2 Number of contacts 5+PE 12+PE 14+PE 19+PE Termination screw crimp
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10G019
C16-3
C016
C16-3
60664-1
Polyamid
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Nichicon CE Aluminum Electrolytic Capacitors
Abstract: NICHICON Capacitors CE SERIES 100uF 450v capacitor electrolytic NICHICON CAPACITORS CATALOG
Text: Nichicon Power Supply and Lighting Applications Catalog Production By Country Snap-in terminal type Screw terminal type Miniature aluminum Chip-type aluminum Electrical double Conductive polymer aluminum electrolytic aluminum electrolytic electrolytic capacitors electrolytic capacitors layer capacitors aluminum solid electrolytic
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zvs flyback driver
Abstract: APT15F60B APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
zvs flyback driver
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET TO POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
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Untitled
Abstract: No abstract text available
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT15F60B
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APT15F60B
Abstract: APT15F60S MIC4452
Text: APT15F60B APT15F60S 600V, 16A, 0.43Ω Max, Trr ≤ 190nS N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced
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APT15F60B
APT15F60S
190nS
APT-8172
APT15F60B
APT15F60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPA65R225C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPA65R225C7 1Description TO-220FP
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IPA65R225C7
O-220
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141F
Abstract: APT6041CLL
Text: APT6041CLL 600V 14A 0.410Ω R POWER MOS 7 MOSFET TO-254 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT6041CLL
O-254
O-254
APT6041
141F
APT6041CLL
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mosfet IRF450
Abstract: power mosfet irf450
Text: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage
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IRF450
O204-AA)
mosfet IRF450
power mosfet irf450
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage
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IRF450
O204-AA)
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3E12
Abstract: 2E12 2N7306D 2N7306H 2N7306R
Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE460 D, R, H 2N7306D, 2N7306R 2N7306H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 12A, 500V, RDS(on) = 0.410Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRE460
2N7306D,
2N7306R
2N7306H
O-258
100KRAD
300KRAD
1000KRAD
3000KRAD
O-258AA
3E12
2E12
2N7306D
2N7306H
2N7306R
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amphenol 12 pin male circular plug
Abstract: C16-3 amphenol amphenol 2 pin male circular plug right angle 40 pin male connector JPD-1410446 t6483-001 transistor D 1002 T3361-001 U 10I01 amphenol 2 pin female circular plug
Text: Amphenol C 16-1 Catalogue ASA200005 Rev 1.A Interconnection Solution Guide Circular Connector Threaded Coupling – Plastic Designed to meet the high requirements of Industrial applications under harsh environment. Available in Screw; Solder and Crimp terminations.
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ASA200005
TA-1414S-1K*
amphenol 12 pin male circular plug
C16-3 amphenol
amphenol 2 pin male circular plug
right angle 40 pin male connector
JPD-1410446
t6483-001
transistor D 1002
T3361-001 U
10I01
amphenol 2 pin female circular plug
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IRFP440R
Abstract: cd3232 IRFP441R IRFP442R IRFP443R ir441
Text: Rugged Power M OSFETs_ IRFP440R, IRFP441R, IRFP442R, IRFP443R File Number 2089 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0 .8 5 0 and 1 .1 0 N-CHANNEL ENHANCEMENT MODE D Features: • ■ ■ ■
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IRFP440R,
IRFP441R,
IRFP442R,
IRFP443R
00V-400V
92CS-426S0
IRFP442R
IRFP443R
IRFP440R
cd3232
IRFP441R
ir441
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IRF840R
Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Text: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated
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OCR Scan
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IRF840R,
IRF841R
IRF842R,
IRF843R
00V-400V
IRF841R,
IRF842R
IRF843R
92CS-42659
IRF840R
RF840
IRF840
M2R DIODE
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IRF4431
Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Text: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated
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OCR Scan
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IRF440R,
IRF441R,
IRF442R,
IRF443R
00V-400V
IRF442R
IRF443R
MCS-42S9Â
IRF4431
IRF44
IRF 426
441F
IRF440R
IRF441R
RF440
rf44
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PDF
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Untitled
Abstract: No abstract text available
Text: m h a r r ,s U U S E M I C O N D U C T O R FRE460D, FRE460R, FRE460H 12A, 500V, 0.410 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 12A, 500V, RDS on = 0.41 On TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRE460D,
FRE460R,
FRE460H
O-258AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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