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    7L MARKING DIODE Search Results

    7L MARKING DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    7L MARKING DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS16-02GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD BAS16-02GP SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching SOT-23 * Silicon epitaxial planar MARKING .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10) .119 (3.04) (1) * 7L


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    PDF BAS16-02GP OT-23 350mW. 450mA. OT-23) 100oC BAS16-02GP

    Untitled

    Abstract: No abstract text available
    Text: MA111 Variable Capacitance Diodes MA379 Silicon epitaxial planer type Unit : mm For UHF tuner INDICATES CATHODE ● Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- 1 0.4±0.15 matic insertion through taping 2


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    PDF MA111 MA379

    MA379

    Abstract: 7L marking diode 7L Marking
    Text: MA111 Variable Capacitance Diodes MA379 Silicon epitaxial planer type Unit : mm For UHF tuner INDICATES CATHODE Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


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    PDF MA111 MA379 MA379 7L marking diode 7L Marking

    G6SP-CADB

    Abstract: diode marking 7L
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED NOTA® Lead (Pb) Free Product - RoHS Compliant LW G6SG Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED NOTA® Lead (Pb) Free Product - RoHS Compliant LW G6SG Not for new design / Nicht für Neuentwicklungen Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss


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    PDF D-93049

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF D-93049

    SOT363 MARKING CODE 7M

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5211DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These


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    PDF LMUN5211DW1T1G LMUN5211DW1T1 SOT363 MARKING CODE 7M

    Q65110A7886

    Abstract: LW A6SG-V2AB-5K8L
    Text: Hyper SIDELED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW A6SG Released Abkündigung nach OS-PD-2009-009 Obsolete acc. to OS-PD-2009-009 Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss


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    PDF OS-PD-2009-009 Q65110A7886 LW A6SG-V2AB-5K8L

    Untitled

    Abstract: No abstract text available
    Text: Hyper SIDELED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW A6SG Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED NOTA® Lead (Pb) Free Product - RoHS Compliant LW G6SG Abkündigung nach OS-PD-2008-008 Obsolete acc. to OS-PD-2008-008 Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss


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    PDF OS-PD-2008-008 OS-PD-2008-008 D-93049

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    PDF D-93049

    Untitled

    Abstract: No abstract text available
    Text: Hyper SIDELED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW A6SG Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss


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    Q65110A3635

    Abstract: LWA6SG
    Text: Hyper SIDELED long life Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW A6SG Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, eingefärbter diffuser Silikon - Verguss


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power TOPLED Enhanced optical Power LED ThinGaN® Lead (Pb) Free Product - RoHS Compliant LW G6SP Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-6 Gehäuse, farbiger diffuser Silikon - Verguss • Besonderheit des Bauteils: sehr kleiner


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    D20SC9M

    Abstract: marking code AJs
    Text: Schottky Barrier Diode Twin Diode OUTLINE D20SC9M Unit : mm P a c k a g e : IT O -3 P Weight 4.3« Typ 15 90V 20A Date code Feature • T j= 1 5 0 t: • Tj=150°C • P rrs m T lK r jy is x fä M . • *«9K8B • P rr s m Rating • High lo Rating • 7 J I Æ - J L-K


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    PDF D20SC9M 15ffC J533-1 D20SC9M marking code AJs

    k016

    Abstract: Z27V
    Text: <J1>G e n e r a l v MMBZ15VDC/A and MMBZ27VDC/A S e m ic o n d u c t o r Dual Zener Transient Voltage Suppressor TO-236AB sot-23 Diodes for ESD Protection J 2 2 /3 .1 ) 7l 10 (2.8) .016 (0.4) -H k— A Mounting Pad Layout Top V iew M - 0.037 (0.95) 0.037 (0.95)-


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    PDF MMBZ15VDC/A MMBZ27VDC/A -236A sot-23) MMBZ15VDA MMBZ27VDA MMBZ15VDC MMBZ27VDC MMBZ15VDC k016 Z27V

    H0263

    Abstract: ETT4
    Text: ERC13 1 .2A - t o m Outline Drawings y * * - k _ m GENERAL USE RECTIFIER DIODE *3.0 28MIN 5 ¿0.6 A 28 MIN •*(#•§ : Features #-9- - • 'J V3 2 .!§ S • JSfflS14 . Hi gh surge current ■ f c iv • Marking Compact size, lightweight


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    PDF ERC13 28MIN JSfflS14 I95t/R89) H0263 ETT4

    MA379

    Abstract: RIA 550
    Text: Panasonic V a ria b le C a p a c ita n c e D io d e s MA3 7 9 Silicon epitaxial p la n er type Unit : mm For UHF tuner INDICATES CATHODE • Features • Large capacity variation ratio • Small series resistance ro • S-Mini package, enabling down-sizing of the equipment and auto­


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    PDF 470MHz MA379 MA379 RIA 550

    t3d diode

    Abstract: Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode
    Text: 711GöSb □Q4Db71 Ib ö • PHIN SbE D P H IL IP S INTERNATIONAL B YV28 SERIES SbE » EPITAXIAL AVALANCHE DIODES Glass passivated epitaxial rectifier diodes in hermetically sealed axial-leaded glass envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching


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    PDF BYV28 BYV28-50 \15\10mm t3d diode Diode T3D 64 T3D 65 diode T3D 64 diode Diode T3D 03 T3D 89 DIODE T3D 55 diode diode t3d 663 t03 T3D 28 diode

    SIEMENS TCA 3727 a

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TCA 3727 Overview Bipolar 1C Features • 2 x 0.75 amp. / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 52 V • Outputs free of crossover current


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    PDF Q67000-A8302 P-DIP-20-6 Q67000-A8335 P-DSO-24-3 GPS05144 SIEMENS TCA 3727 a