453 optocoupler
Abstract: No abstract text available
Text: Product specification Philips Semiconductors CNX71A/CNX72A High-voltage optocouplers 3UALITY T E C H N O L O G I E S CORP 57E D 7Mbbfl51 O O Q M S q Q OGI • ( 3 T Y FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with
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CNX71Aand
CNX72Aare
OT229B
CNX72A,
CNX71A.
-CNX71A
CNX71A/CNX72A
OT212.
74bbflSl
0DD4fl03
453 optocoupler
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QPB704
Abstract: No abstract text available
Text: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging
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OPB703/OPB704/QPB705
7Mbbfl51
QPB704
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Untitled
Abstract: No abstract text available
Text: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET
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H11F1
H11F2
H11F3
ST1603
74bbfl51
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Untitled
Abstract: No abstract text available
Text: SUPER BRIGHT T-1% 5 mm LED LAMPS OPTOELECTRONICS SUPER RED M V 813 2 CLEAR SUPER RED M V 8 1 3 3 CLEAR SUPER YELLOW M V 8 3 3 2 CLEAR SUPER YELLOW M V 8 3 3 3 CLEAR These T-1% super bright LEDs have a moderate 30° viewing angle. The MV8332/3 are made with an InGaAlP
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MV8332/3
MV8132/3
ST1743
ST1751
ST1752
ST1753
ST1754
7Mbbfl51
00Gb7b0
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CNR50
Abstract: TDA8385 B5415 BS415 BS7002 .2ty transistor
Text: Product specification Philips Semiconductors CNR50 Dedicated IC-optocoupler ÛUA L IT Y T E C H N O L O G I E S CORP S?£ J OD O m m b 0 1 3 * i 3TY FEATURES • A cost effective optocoupler with integrated additional functions T • A wide body DIL 8 encapsulation
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CNR50
TDA8385
B5415
BS415
BS7002
.2ty transistor
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Untitled
Abstract: No abstract text available
Text: Ö U AL IT Y T E C H N O L O G I E S CORP 57E » 74bbñ51 0 0 0 H im 3Tb •■ 3TY Optolsolator Specifications _ H 11A520, H 11A550, H 11A 5100 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Phototransistor T h e H 1 1 A 5 2 0 , H 1 1 A 5 5 0 a n d H 1 1 A 5 1 0 0 co n s is t o f a g a lliu m
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11A520,
11A550,
7Mbbfi51
H11A520,
H11A550,
H11A5100
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st-171
Abstract: No abstract text available
Text: [•Il SUPER BRIGHT T-1% 5 mm LED LAMPS O P T O E L E C T R O H ICS SUPER YELLOW MV8313 CLEAR SUPER YELLOW M V8314 CLEAR PACKAGE DIMENSION! DESCRIPTION These T-1 % super bright LEDs have a narrow 12° viewing angle for concentrated light output. The MV831X emit
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MV8313
V8314
MV831X
74bbfl51
00Db7b5
ST1680
ST1704
ST1682
MV8313)
Q00b7bb
st-171
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Untitled
Abstract: No abstract text available
Text: EU SIDELOOKER PHOTOTRANSISTOR OPTOELECTRONICS QSE122/123 PACKAGE DIMENSIONS DESCRIPTIO N Th e Q SE12X family is a silicon phototransistor encapsulated in a w ide angle, infrared transparent, dark blue, plastic sidelooker shell package. FEA TU RES • High Sensitivity.
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QSE122/123
SE12X
QEE113
ST2149
7MLbfi51
a00b30a
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Wide body, high isolation/high-gain optocouplers flUALITY TECHNOLOGIES CORP CNW 138/CNW 139 57E J> 7Mbt3fl51 0004512 bll • ö T Y FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm • Minimum clearance of 9.6 mm
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138/CNW
7Mbt3fl51
OT212.
74bbflSl
0DD4fl03
MSA048-2
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Transistor 2TY
Abstract: .2ty transistor npn
Text: CNX48U Û U A L IT Y T E C H N O L O G I E S CORP 7Mhbfi51 OQO M Sb ? 72T • Û T Y S7E D OPTOCOUPLER % Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DIL envelope.
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CNX48U
7Mhbfi51
E90700
0110b
804/VDE
86/HD
74bbfl51
OT212.
74bbflSl
0DD4fl03
Transistor 2TY
.2ty transistor npn
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MV10B
Abstract: C618 C1832 C571 "General Instrument" TO18 ir diode
Text: C2UALITY TEC HNOLOGIES CORP i GENERAL INSTRUMENT TO-18 SOLID STATE LAMP STANDARD RED MV10B DESCRIPTION PACKAGE DIMENSIONS The MV10B is a GaAsP light emitting diode mounted on a TO-18 header with a clear epoxy lens. On forward bias, it emits a spectrally narrow band of radiation which peaks at 660 nm.
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MV10B
MV10B
50pSEC
C575A
MIL-S-750,
C618
C1832
C571
"General Instrument"
TO18 ir diode
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Untitled
Abstract: No abstract text available
Text: £• 4mm FLAT TOP LAMPS OPTOELECTHONICS RED HIGH EFFICIENCY YELLOW GREEN HLMP-M200/M201 HLMP-M250/M251 HLMP-M300/M301 HLMP-M350/M351 HLMP-M500/M501 HLMP-M550/M551 DESCRIPTION Bright colors and a wide viewing angle are the outstanding features of the new 4 m m flat to p lamps. The
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HLMP-M200/M201
HLMP-M250/M251
HLMP-M300/M301
HLMP-M350/M351
HLMP-M500/M501
HLMP-M550/M551
C3007
C3009
7Mbbfl51
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bt 44a
Abstract: Transistor 2TY npn photo transistor P042A
Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life
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P040/44A
74bbflSl
GDD4b74
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
74bbfl51
bt 44a
Transistor 2TY
npn photo transistor
P042A
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Untitled
Abstract: No abstract text available
Text: EU PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N35 4N36 4N37 DIMENSIONS DESCRIPTIO N The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. FEA TU R ES & APPLICATIONS
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E90700
C1296A
VCEat10
74bbfl51
000b033
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CNR50
Abstract: SOT230 BS415 BS7002 TDA8385 UBB180 351 8pin dil 2ty transistor
Text: Product specification Philips Semiconductors 7 Dedicated IC-optocoupler CNR50 flUALITY T E C H N O L O G I E S CORP S 7E B M Bp, 7 U U 5 1 OD O m tu t. D 13 _ FEATURES • A cost effective optocoupler with integrated additional functions • A wide body DIL 8 encapsulation
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CNR50
CNR50
0D4602
OT230.
OT212.
74bbflSl
OT97F.
OT271
MSA048-
a00HfiD4
SOT230
BS415
BS7002
TDA8385
UBB180
351 8pin dil
2ty transistor
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