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    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28 PDF

    2MBI450U4E-120

    Abstract: 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120
    Text: パワーデバイス/Power Devices IGBT • IGBTモジュールの特長 Features of the IGBT Module 第6世代IGBTモジュール Vシリーズ 6th Gen. IGBT Module V-series ■特長 Features パッケージ小型化と出力のパワー UP を実現！


    Original     		max175 2MBI600TN-060V 2MBI450UN-120V 2MBP600UN-120V 2MBI450U4E-120 2MBI400U4H-120 2MBI300U4H-120 THYRISTOR TC122 6MBP75RU2A120 2MBI75U4A-120 7MBP75RU2A120 2mbi75u4a120 7MBR25SA120 05 2MBI200U4H-120 PDF

    7MBP50RU2A120

    Abstract: aagg marking code JJ7 AC2500 H04-004 HCPL-4504 P611 Zener Diode LF marking zener marking code u3 t3 TJI-25
    Text: This m aterial and the inform ation herein is the p ro p e rty o f Fuji E lectric Device Technology Co.,Ltd. They shall be neither reproduced, copied, lent, o r disclosed in any w ay whatsoever for the use o f any third party nor used fo r the m anufacturing purposes w ithou t the express w ritte n consent of


    OCR Scan     		7MBP50RU2A120 MS6M01051 H04-004-07b H04-004-03a 7MBP50RU2A120 aagg marking code JJ7 AC2500 H04-004 HCPL-4504 P611 Zener Diode LF marking zener marking code u3 t3 TJI-25 PDF