ADC CCIR 601
Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required
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KS0122
100-QFP-1420C
ADC CCIR 601
Solid state CCIR ca 151
KS0122-S
aexo
chroma 175 ic
CCIR601
KS0119
multi S-Video Input
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KMM466S203BT-F0
Abstract: KMM466S203BT-F2
Text: KMM466S203BT NEW JEDEC SDRAM MODULE KMM466S203BT S D R A M SODIMM 2Mx64 SDRAM SODIMM based on 2Mx8, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S203BT is a 2M bitx 64 Synchronous Dynamic RAM high density memory module. The Samsung
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KMM466S203BT
KMM466S203BT
2Mx64
400mii
144-pin
7Th4142
KMM466S203BT-F0
KMM466S203BT-F2
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Untitled
Abstract: No abstract text available
Text: KM44V1004DJ ELECTRO NICS CMOS D R A M 1 M x 4 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access
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KM44V1004DJ
16Mx4,
512Kx8)
7Th4142
D347c
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KM44C1004C
Abstract: No abstract text available
Text: KM44C1004C/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tR A C tC A C tR C tH P C KM44C1004C/CL/CSL-5 50ns 13ns 90ns 20ns KM44C1D04C/CL/CSL-6 60ns 15ns 110ns 24ns KM44C1004C/CUCSL-7
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KM44C1004C/CL/CSL
KM44C1004C/CL/CSL-5
KM44C1D04C/CL/CSL-6
110ns
KM44C1004C/CUCSL-7
130ns
KM44C1004C/CL/CSL-8
150ns
cycle/16ms
Norm004C/CL/CSL
KM44C1004C
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Untitled
Abstract: No abstract text available
Text: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh
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KM48C2000B
16Mx4,
512Kx8)
KM48C2000BK
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transistor tip 412
Abstract: No abstract text available
Text: TIP47/48/49/50 NPN SILICON TRANSISTOR HIGH VOLTAGE AND SWITCHING APPLICATIONS HIGH SUSTAINING VOLTAGE Vceo(sus : 250 to 400V) 1A RETED COLLECTOR CURRENT T O -2 2 0 ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) C h a ra c te ristic Sym bol Collector-Base Voltage : TIP47
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TIP47/48/49/50
TIP47
TIP48
TIP49
TIP50
P47/48/49/50
7Th4142
transistor tip 412
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Untitled
Abstract: No abstract text available
Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.
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KM681000BLI/BLI-L
128Kx8
385mW
KM681000BLGI/BLGI-L
32pin
525mil)
681000BLTI/BLTI-L
0820F)
KM681000BLRI/BLRI-L
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KM29V16000ATS
Abstract: No abstract text available
Text: KM29V 16000ATS ELECTRONICS Flash 2M X 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29V
250us
16000ATS
-TSOP2-400F
-TSOP2-400R
KM29V16000ATS
7Tb4142
KM29V16000ATS
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A12CZ
Abstract: KM68V1000BL
Text: K M 68V 1000B L /L -L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 7 0 ,1 0 0 n s m a x. • L ow P o w e r D issip atio n S ta n d b y(C M O S ): 1 8 0 |iW (m a x.)L -V e rsio n 5 4 ^ W (m a x .)L L -V e rs io n
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KM68V1000BL
128Kx8
100ns
180nW
144mW
KM68V1000BLG/BLG-L:
525mi!
KM68V1000BLT/BLT-L
KM68V1OOOBLR/BLR-L:
KM68V1000BL/BL-L
A12CZ
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KM44C4100BK
Abstract: cd-rom circuit diagram D0345 KM44C4100B
Text: KM44C4100BK CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of mem ory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle
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KM44C4100BK
512Kx8)
003457b
KM44C4100BK
cd-rom circuit diagram
D0345
KM44C4100B
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KA9220B
Abstract: 9220B
Text: LINEAR INTEGRATED CIRCUIT KA9220B RF AMP + SSP FOR CDP The KA9220B is a 1-Chip BICMOS integrated circuit to perform the function of RF AMP and SSP Servo Signal Processor for Compact disc player applications. It consists of RF signal processing, focus servo, tracking servo, sled servo con
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KA9220B
KA9220B
0025b30
9220B
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Untitled
Abstract: No abstract text available
Text: KM423 2W259 A Graphic Memory ELECTRONICS FEATURES DESCRIPTION • 1 M Byte Frame-Buffer on a single chip The KM4232W259A is a 1M Byte Dual Ported DRAM array with added features that accelerate graphic operations in a GUI environment. A 256-bit internal bus allows transferring
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KM423
2W259
KM4232W259A
256-bit
-15ns
SCR4232W259A
71bMlM2
KM4232W259A
DD3121D
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Untitled
Abstract: No abstract text available
Text: KM44C4003BK CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time
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KM44C4003BK
G03444b
GD34447
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