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    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRFP150/151 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFP150/151 IRFP150 IRFP151