18AF
Abstract: BUT18AF UT18 125OC BUT18F BUT18
Text: Product specification Philips Semiconductors BUT18F; BUT18AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a S O T 1 8 6 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m o to r control
|
OCR Scan
|
BUT18F;
BUT18AF
OT186
BUT18F
Z94646
7110aab
7773D
711DfiEb
18AF
BUT18AF
UT18
125OC
BUT18
|
PDF
|
BUT18
Abstract: BUT18A
Text: m b^E D N AUER PHILI P S / D I S C R E T E ^53^31 GDSfiMSH 15b BUT18 BUT18A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a T 0 -2 2 0 envelope, intended for use in converters, inverters, switching regulators, motor control systems, etc.
|
OCR Scan
|
BUT18
BUT18A
O-220
O-220AB.
BUT18
7Z94646
BUT18A
|
PDF
|