73204
Abstract: 7D-18
Text: Package Information Vishay Siliconix PowerPAK ChipFET® DUAL PAD D D1 7 SI (1) GI (2) D2 (6) D2 (5) E D1 (8) S2 (3) G2 (4) A1 C A Z e b DETAIL Z D2 GI (2) S2 (3) G2 (4) H E2 K L SI (1) D2 D1 (7) D1 (8) D2 (5) D2 (6) K1 Backside view of dual pad MILLIMETERS
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C-81224-Rev.
26-Jan-09
73204
7D-18
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19DAC
Abstract: 7 uca FD59
Text: 1=@;>9 2=?9 05@;9 2=?9C x}- 1=K9 4ptL|pt? 1A>=8 1E5E9 .- x9>5J 2=?9C fug wAF@E9C Mz95EFC9D a-13 7GWC :x|L0x|JJ a7GKEIC O?KEC 8GJCO a.ALKLJGA?I MOGAC a.?PV QGJC PCQQGKE auy QGJC O?KECP ?S?GI?@IC a5LTCO PRMMIV O*8. ~ uutsvvt9*, ytszt0W O*8.up *8.v ~ uut9*,p vvt9*, ytszt0Wp
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Mz95EFC9D
1B998k
7A89C
19DAC
7 uca
FD59
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timing diagram for 8 to 1 multiplexer
Abstract: DIN66
Text: Media Converter RS 232-8-channel Multiplexer Identification Part No. Drawing Dimensions in mm Multiplexer 8-channel duplex RS 232-C/V 24 optical link: for POF1 F-SMA 660 nm 20 40 016 3411 optical link: for GI F-ST 850 nm 20 50 016 3421 9 … 30 V Serial Interfaces
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232-8-channel
232-C/V
timing diagram for 8 to 1 multiplexer
DIN66
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1N007
Abstract: fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005
Text: FAGQR ELECTRONICS 57E D WÊ 3 ^ 3 2 5 Q000LS3 T31 « F G R S CROSS REFERENCE COMPETITIVE SERIES COMPETITOR FAGOR SERIES 1 5SKE 8 2 - 1 5KE 300 1 SKE 8 2 A -1 5KE 300 A THOM/CS1/MOT/GI THOM/GSI/MOT/GI 1 SKE 8 2 C -1 5KE 300 C 1 5SE 12 - 1 SSE 300 1 5SE 12 A • 1 5SE 300 A
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0G0Gb53
15SKE
15KE82
5KE300C
1KAB10-1KAB1C0
W005F-W10F
100JB
FB1001
FB1006
1N007
fri07
1N007 rectifier
MDA 2500
1Ns408
MDA 2506
by164 philips
wiom
BY225-200
ITT 1N4005
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Untitled
Abstract: No abstract text available
Text: SI6968DQ VISHAY Vishay Siliconix N-Channel 2.5-V G-S Battery Switch PRODUCT SUMMARY VDS (V) 20 r DS(ON) Id (& ) (A) 0.022 @ VGS = 4.5 V ±6 .5 0.030 @ VGS = 2.5 V ±5 .5 D D N-Channel MOSFET N-Channel MOSFET TSSOP-8 D Si D Si6968DQ S2 Si S2 Gi g2 Gi Top View
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SI6968DQ
Si6968DQ
S-56943â
02-Nov-98
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MF-2 360 5
Abstract: Scans-048 DSAGER00040
Text: MB 1 / 5 0 MCI MCt/50 MCI / 60 10 1,9 10 4 3,25 0,19 1,1 * Type ! 3,3 U f rf H e iz a r t B i ET N ET ET 700 100 1000 1000 V e riv . Ua 15»' Ugr, - - U gi U g$ Ug-z -38 72 1,5 4 80 -64 75 • 75 V gi /, h i 3 1,4 4 6 S 8 6,5 10 8 D 4 11 2,5 2,1 Ri 1,08 0,85
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MCt/50
Ri1000
MF-2 360 5
Scans-048
DSAGER00040
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lM 3130
Abstract: No abstract text available
Text: MOTOROLA Semiconductor Components M C10EP32 SO -8, D SUFFIX 8-LEAD PLASTIC SOIC PACKAGE CASE 751 -06 ORDERING INFORMATION /s;tòér^gi ;m L T & Lm ÌJ & MC10EP32D SOIC Product Preview - 5 - 2 Divider PIN DESCRIPTION • 355ps Pi’opagation Delay PIN FUNCTION
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C10EP32
MC10EP32D
355ps
MC10EP32/D
lM 3130
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Untitled
Abstract: No abstract text available
Text: REVISION F M0DM-A-XX-8P8C-X J TYPE -Ai PORTS-0 2 ,-0 3 ,-0 4 ,-0 5 ,-0 6 ,-0 8 l -10 POSIT IDNS/CDNTACTS-1 -8P8D 8 Pos/8 Con PI ATTNG-Hi, 000030' Au SEE NOTE 2 -Gi. 000015' Au -D .000050' Au "B" ©
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Untitled
Abstract: No abstract text available
Text: TOSHIBA me LO GI C/MEMORY 0 I *iQT?24a 0010258 .3 | - TC74HC259P/F T - < o l -¿ *51 TC74HC259P/F 8-BIT ADDRESSABLE LATCH_ The TC74HC259 Is a hi gh speed CMOS 8-BIT ADDRESSABLE LATCH fabricated wi th sili con gate C zMOS technology.
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TC74HC259P/F
TC74HC259P/F
TC74HC259
TC74HC259P/F--------------
1CH724Ã
T-67-21-51
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3-8 decoder 74138
Abstract: 74138 74137 74138 decoder ttl 74138 decoder 74138 TTL 74137 74138 3 to 8 decoder ls 74138 GL107
Text: - 108 - 74137 3 to 8 Decoder with Address Latches 2 5 L S 2 5 3 6 (± x v K Gi X i '-o v ij G2 Gi. m iv H L X H 'ir~ X ij t f t S W , x 'fcilWjH L H f t <ifr w. 7.,-f | K J0 S * * Kt> tpd max A, B, tpd • max Gl tpd max -G2 tpd max -GL Ic c max ALL tw min
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25LS2536
25LS2536
3-8 decoder 74138
74138
74137
74138 decoder
ttl 74138
decoder 74138
TTL 74137
74138 3 to 8 decoder
ls 74138
GL107
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Untitled
Abstract: No abstract text available
Text: REVISION E PCB LAYDUT M0DS-G-8P8C-X TYPE 3 .2 5 ± 0 .4 0 -g _I T T PQSITIQNS/CQNTACTSJ -8P8C1 8 Pos/8 Con PLATING-Gi. 000015' Gold -Hi. 000030' Gold -Ei. 000050' Gold SEE NOTE 3 (EITHER DIRECTION) NOTES: 1. 2. © R EPRESENTS CRITICAL DIMENSION.
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Untitled
Abstract: No abstract text available
Text: MOTOROLA °^rN" " ~ Semiconductor Components M C10EP16 SO -8, D SUFFIX 8-LEAD PLASTIC SOIC PACKAGE CASE 751 -06 /s;tòér^gi ;m m ORDERING INFORMATION MC10EP16D SOIC Product Preview D ifferential R eceiver • 160ps Propagation Delay PIN DESCRIPTION PIN FUNCTION
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MC10EP16D
160ps
MC10EP16/D
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Untitled
Abstract: No abstract text available
Text: 3P8C-X PORTS-02,-03,-04,-05,-06,-08 l -10 POSIT IDNS/CDNTACTS-1 -8P8D 8 Pos/8 Con @ PI ATTNG- -Hi, 000030' Au SEE NOTE 2 -Gi. 000015' Au -D.000050' Au ” B” NOTES: 1. 2. DECIMALS TABLE 1 PORTS -0 2 -0 3 -0 4 -0 5
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PORTS----------------02
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Belden Wire 9923-10
Abstract: Belden Wire 9923 1600-19A 1600-19A-K1 155-1370 22AWG-RED
Text: -110.0 + / — 1.5- < & = = = — I-8— = - • = - 3 £ Locking Feature = 8 ■> -i 03.18 Max. = ~7 TOLERANCE=0.25 MM, EXCEPT WHERE IS NOTED. Gi 1. 2. 3. 4. 5. 6. GILWAY TECHNICAL LAMP B I-PIN LAMP 1 6 0 0 -1 9A HEAT SHRINK TUBING 3M FP301H 3/ 3 2
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600-19A
FP301H
22AWG-RED
22AWG
600-19A-K1
Belden Wire 9923-10
Belden Wire
9923
1600-19A
1600-19A-K1
155-1370
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Untitled
Abstract: No abstract text available
Text: n Z Ï SGS-THOMSON M23C4001 5!ÌSD g[S(ò ilLiM(S)iD(gi _ 4096K (512K x 8) CMOS ROM ADVANCE DATA • VERY FAST ACCESS TIME : 120 ns. (Chip select or address access time) ■ LOW POWER "CMOS" CONSUMPTION : - Operating current 50 mA
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M23C4001
4096K
M23C4001
120ns
A0-A18
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MPSW45 equivalent
Abstract: transistor case To 105 CENW45 MPSW45
Text: 1989963 'CENTRAL "SEMICONPUCTOR S@giîie fiÆ eÊ@r ®©rp. g a m i semiconductor cored. central semiconductor e@rp. central semiconductor Corp. 1 4 5 Adams Avenue Hauppauge, N ew York 1 1 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR CENW45 Series Is a Silicon NPN Epitaxial Planar Darlington
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CENW45
MPSW45
CBR30
0000S23
O-105
O-106
MPSW45 equivalent
transistor case To 105
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am27c801
Abstract: 1N914 IA10 M27C801 TSOP32 11zH
Text: SCS"THOMSON G l M g»HHI ìMQ [M(gi M27C801 8 Megabit (1 Meg x 8) UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 90ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 35mA - Standby Current 100nA
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M27C801
100nA
52sec.
FDIP32W
TSOP32
M27C801
TSOP32
am27c801
1N914
IA10
11zH
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12sa7gt
Abstract: 12SA7 12sa7 tube 12sa7gt tube 12sa7, tube 9511B 12SA7-GT Scans-0017288
Text: I2SA7,12SA7GT TUNG'SOL HEPTODE . 12SA76T j-~ 16 — • ! MAX. MAX MT 8 2|S L MAX 2-gI MAX. COATED UNIPOTENTIAL CATHODE HEATER 15 MAX 12.6 VOLTS 150 MA. AC OR DC METAL SHELL ANY MOUNTING POSITION BOTTOM VIEW BOTT O M VIEW INTERMEDIATE 8 PIN OCTAL SMALL WAFER
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12SA7GT
12SA7
12SA7GT
12sa7 tube
12sa7gt tube
12sa7, tube
9511B
12SA7-GT
Scans-0017288
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Untitled
Abstract: No abstract text available
Text: [ Z J SGS-THOMSON * 7 w. RiflD g[S |[Li TIS©liaB(gi A M 8 0 9 1 2 -0 1 5 RF & MICROWAVE TRANSISTORS _ AVIONICS APPLICATIONS . REFRACTORY/GOLD METALLIZATION • EM ITTER SITE BALLASTED . 0 0 :1 VSWR CAPABILITY ■ LOW THERMAL RESISTANCE
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AM80912-015
00bSD3fl
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T3D 54 DIODE
Abstract: T3D 55 diode T3D DIODE 29 T3D 01 DIODE Diode T3D 44 74AC245
Text: SGS-THOMSON ilLICTlBi iD gi 74AC245 OCTAL BUS TRANSCEIVER WITH 3-STATE OUTPUTS (NON INVERTED HIGH SPEED: t o = 4.5 ns (TYP.) at Vcc =5V . LOW POWER DISSIPATION: Icc = 8 nA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: Vnih = Vnil = 28% Vcc (MIN.) . 50Q TRANSMISSION LINE DRIVING
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74AC245
74AC245M
AC245
tec50%
SC09220
7T2T237
0077T22
P013L
T3D 54 DIODE
T3D 55 diode
T3D DIODE 29
T3D 01 DIODE
Diode T3D 44
74AC245
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Untitled
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^7#«, HO glS ilLIOT®iD(gi ST24C08, ST25C08 ST24W08, ST25W08 SERIAL ACCESS 8K (1K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with 10 YEARS DATA RETENTION > SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24x08 versions - 2.5V to 5.5V for ST25x08 versions
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ST24C08,
ST25C08
ST24W08,
ST25W08
ST24x08
ST25x08
ST24W08
ST24/25C08,
ST24/25W08
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Untitled
Abstract: No abstract text available
Text: EjJ SGS-THOMSON D»ILI £TMD(gi M28F101 1 Mb (128K x 8, Chip Erase FLASH MEMORY • 5V ±10% SUPPLY VOLTAGE ■ 12V PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 70ns ■ BYTE PROGRAMING TIME: lO^s typical ■ ELECTRICAL CHIP ERASE in 1s RANGE ■ LOW POWER CONSUMPTION
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M28F101
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AAZZ
Abstract: m23c100
Text: / = T SGS-THOMSON * J Æ > RfflD g^(Q iLi(gU^ iD(gi M23C1000 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION
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M23C1000
100ns
M23C1000
100ns
VA00665
PDIP28
AAZZ
m23c100
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Siemens photodiode visible light
Abstract: No abstract text available
Text: SIEMENS KOM 2084 4-CHIP SILICON PIN PHOTODIODE ARRAY Package Dimensions in mm Frame PC board 8 \ Chip Coaling 5 ±.2 ±2 Schematic K o A2 o - t X - - W - o A l li r Gi> A3 o - tX - —|<d—o A4 5.08 2.54 I ~T FEATURES Characteristics, Single Segment TA=25°C, std. light A, T= 2 8 5 6
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1X10-14
X1013
K0M2084
Siemens photodiode visible light
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