dic a700
Abstract: dic a700 circuit 8 pin 3860 ic circuits LTC3860 LTC4449
Text: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs n Constant Frequency Voltage Mode Control with Accurate Current Sharing n ±0.75% 0.6V Voltage Reference
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LTC3860
12-Phase
25MHz
250kHz
750kHz
LTC3853
LTC4449
LTC4442/
LTC4442-1
3860fb
dic a700
dic a700 circuit
8 pin 3860 ic circuits
LTC3860
LTC4449
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dic a700
Abstract: LTC3680 8 pin 3860 ic circuits emerson track sheet free dic a700 circuit sanyo oscon label LTC3860 LTC4449 LTC3775 5.1 channel master volume circuit with remote control
Text: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing
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LTC3860
12-Phase
25MHz
LTC4449
LTC4442/LTC4442-1
LTC3880/LTC3880-1
16-Bit
3860fc
dic a700
LTC3680
8 pin 3860 ic circuits
emerson track sheet free
dic a700 circuit
sanyo oscon label
LTC3860
LTC4449
LTC3775
5.1 channel master volume circuit with remote control
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Untitled
Abstract: No abstract text available
Text: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing
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LTC3860
12-Phase
25MHz
LTC4442/LTC4442-1
LTC3880/LTC3880-1
16-Bit
3860fc
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dic a700 circuit
Abstract: dic a700 LTC3680 D12S36A SMT30PB LTC3860 LTC4449 transistor R1A 37 pwm 555 timer mosfet driver ltc44
Text: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing DESCRIPTION FEATURES n n n n n n n n n n n n n n n Operates with Power Blocks, DRMOS or External Gate Drivers and MOSFETs Constant Frequency Voltage Mode Control with Accurate Current Sharing
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LTC3860
12-Phase
25MHz
MSOP-16E,
QFN-16
LTC4442
LTC4449
3860fa
dic a700 circuit
dic a700
LTC3680
D12S36A
SMT30PB
LTC3860
LTC4449
transistor R1A 37
pwm 555 timer mosfet driver
ltc44
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Untitled
Abstract: No abstract text available
Text: LTC3860 Dual, Multiphase Step-Down Voltage Mode DC/DC Controller with Current Sharing Description Features Constant Frequency Voltage Mode Control with Accurate Current Sharing n ±0.75% 0.6V Voltage Reference n Differential Remote Output Voltage Sense Amplifier
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LTC3860
12-Phase
25MHz
MSOP-16E,
QFN-16
LTC4442
LTC4449
3860f
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Untitled
Abstract: No abstract text available
Text: BD237 NPN , BD238 (PNP) Preferred Devices Plastic Medium Power Silicon NPN Transistor Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain − • • http://onsemi.com hFE = 40 (Min) @ IC = 0.15 Adc
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BD237
BD238
BD237/D
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Untitled
Abstract: No abstract text available
Text: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS
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BD237G
BD234G,
BD238G
BD234G
DB237G,
BD237/D
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MJ21294
Abstract: MJ21294G
Text: MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control circuits. Features • Exceptional Safe Operating Area • Dual Die Device with Standard 40 mil pins • Pb−Free Package is Available*
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MJ21294
O-204AA
MJ21294/D
MJ21294
MJ21294G
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Untitled
Abstract: No abstract text available
Text: MJE371G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http://onsemi.com Features
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MJE371G
MJE371
MJE521
MJE371/D
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BD809
Abstract: BD810
Text: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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BD809
BD810
r14525
BD809/D
BD809
BD810
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Untitled
Abstract: No abstract text available
Text: BD237G NPN , BD234G, BD238G (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features http://onsemi.com 2.0 AMPERES POWER TRANSISTORS 25 WATTS
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BD237G
BD234G
BD238G
DB237G,
BD238G
BD237/D
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MJ423
Abstract: Y300500
Text: ON Semiconductort MJ423 High-Voltage NPN Silicon Transistor . . . designed for medium–to–high voltage inverters, converters, regulators and switching circuits. 10 AMPERE POWER TRANSISTOR NPN SILICON 400 VOLTS 125 WATTS • High Voltage — • • VCEX = 400 Vdc
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MJ423/D
r14525
MJ423
Y300500
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ADC 808
Abstract: BD808 power transistor audio amplifier 500 watts BD810 BD807 4422 datasheet 890 f 562 ic pdf datasheet mst 720 bd 808 BD 266 S
Text: BD808 BD810 * Plastic High Power Silicon PNP Transistor *ON Semiconductor Preferred Device . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS
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BD808/D
r14525
ADC 808
BD808
power transistor audio amplifier 500 watts
BD810
BD807
4422 datasheet
890 f 562 ic pdf datasheet
mst 720
bd 808
BD 266 S
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Untitled
Abstract: No abstract text available
Text: 2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.
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2N3773
2N3773/D
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BD237G
Abstract: BD234 BD234G BD236 BD237 BD238 BD238G
Text: BD237 NPN , BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features 2.0 AMPERES POWER TRANSISTORS 25 WATTS
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BD237
BD234
BD238
O-225
BD237/D
BD237G
BD234
BD234G
BD236
BD237
BD238
BD238G
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BD237
Abstract: No abstract text available
Text: BD237 NPN , BD234 (PNP), BD238 (PNP) Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in
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BD237
BD234
BD238
BD237/D
BD237
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MJE5740
Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:
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MJE5740
MJE5742
MJE5740
MJE5742
r14525
MJE5740/D
transistor 2n222
2n222 TRANSISTOR
1N493
2N222
2N2905
MR826
OF 2n222
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2N5194
Abstract: 2N5195 2N5191 2N5192 2N5193
Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP
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2N5194
2N5195*
2N5191,
2N5192
r14525
2N5194/D
2N5194
2N5195
2N5191
2N5192
2N5193
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MJE5190
Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN
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2N5191
2N5192
2N5194,
2N5195.
r14525
2N5191/D
MJE5190
2N5191
TO-225AA
to225a
2N5190
2N5192
2N5194
2N5195
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2N5631
Abstract: high power 500 watts audio amplifier power transistor power transistor audio amplifier 500 watts 200 watt audio amplifier with ic 300 watts audio amplifier NPN 200 VOLTS POWER TRANSISTOR 1N5825 2N6031 MSD6100
Text: 2N5631 High−Voltage − High Power Transistors High−voltage − high power transistors designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − http://onsemi.com
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2N5631
2N5631/D
2N5631
high power 500 watts audio amplifier
power transistor
power transistor audio amplifier 500 watts
200 watt audio amplifier with ic
300 watts audio amplifier
NPN 200 VOLTS POWER TRANSISTOR
1N5825
2N6031
MSD6100
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Untitled
Abstract: No abstract text available
Text: 2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction
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2N4921G,
2N4922G,
2N4923G
2N4920G
2N4921G
2N4922G
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Untitled
Abstract: No abstract text available
Text: 2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features http://onsemi.com • Complement to NPN 2N5191, 2N5192 • These Devices are Pb−Free and are RoHS Compliant*
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2N5194G,
2N5195G
2N5191,
2N5192
2N5194G
2N5194/D
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2N5192G
Abstract: No abstract text available
Text: 2N5190G, 2N5191G, 2N5192G Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits − excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com 4.0 AMPERES NPN SILICON POWER TRANSISTORS
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2N5190G,
2N5191G,
2N5192G
2N5194,
2N5195.
2N5190G
2N5191G
2N5192G
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Untitled
Abstract: No abstract text available
Text: MJE4343 NPN , MJE4353 (PNP) High-Voltage - High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. http://onsemi.com Features 16 AMPS POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS
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MJE4343
MJE4353
MJE4343
MJE4343/D
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