1N6101
Abstract: No abstract text available
Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 16-PIN Ceramic DIP WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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1N6101
16-PIN
1N6101
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6101A DATA SHEET
Abstract: No abstract text available
Text: 6101A Isolated Diode Array with HiRel MQ, MX, MV, and SP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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16-PIN
6101A DATA SHEET
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1N6101
Abstract: 1N6101 JAN
Text: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes
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1N6101
16-PIN
1N6101
1N6101 JAN
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range
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WMS512K8-XXX
512Kx8
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range
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WMS512K8-XXX
512Kx8
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range
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WMS512K8-XXX
512Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 FEATURES • 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns MIL-STD-883 Compliant Devices Available • Commercial, Industrial and Military Temperature Range
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WMS512K8-XXX
512Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Revolutionary, Center Power/Ground Pinout JEDEC Approved MIL-STD-883 Compliant Devices Available
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WMS128K8-XXX
128Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: WMS128K8-XXX 128Kx8 MONOLITHIC SRAM, SMD 5962-96691 FEATURES 32 pin, Rectangular Ceramic Leadless Chip Carrier Package 601 Access Times 15, 17, 20, 25, 35, 45, 55ns Revolutionary, Center Power/Ground Pinout JEDEC Approved MIL-STD-883 Compliant Devices Available
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WMS128K8-XXX
128Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard
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EDI88512CA
512Kx8
EDI88512CA
EDI88128CS.
512Kx8
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard
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EDI88512CA
512Kx8
EDI88512CA
EDI88128CS.
512Kx8
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8 pin ceramic dip microsemi
Abstract: CERAMIC FLATPACK
Text: EDI88512CA 512Kx8 Monolithic SRAM, SMD 5962-95600 FEATURES Access Times of 15, 17, 20, 25, 35, 45, 55ns The EDI88512CA is a 4 megabit Monolithic CMOS Static RAM. Data Retention Function LPA version The 32 pin DIP pinout adheres to the JEDEC evolutionary standard
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EDI88512CA
512Kx8
512Kx8
8 pin ceramic dip microsemi
CERAMIC FLATPACK
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Untitled
Abstract: No abstract text available
Text: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
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WMF128K8-XXX5
128Kx8
150ns
128Kx8
MIL-STD-883
MIL-PRF-38534
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Untitled
Abstract: No abstract text available
Text: WMF128K8-XXX5 128Kx8 MONOLITHIC NOR FLASH SMD 5962-96690* FEATURES Access Times of 50*, 60, 70, 90, 120, 150ns Organized as 128Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 lead, Hermetic Ceramic, 0.400" SOJ (Package 101)
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WMF128K8-XXX5
128Kx8
150ns
128Kx8
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Untitled
Abstract: No abstract text available
Text: WMS512K8-XXX 512Kx8, MONOLITHIC SRAM, SMD 5962-95613 FEATURES Access Times 70, 85, 100, 120ns MIL-STD-883 Compliant Devices Available Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP Package 300 • 32 lead Ceramic SOJ (Package 101)
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WMS512K8-XXX
512Kx8,
120ns
MIL-STD-883
A0-18
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Untitled
Abstract: No abstract text available
Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby
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EDI88128CS
128Kx8
EDI88128LPS)
MIL-PRF-38535.
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby
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EDI88128CS
128Kx8
EDI88128LPS)
128Kx8
EDI88128CS
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Untitled
Abstract: No abstract text available
Text: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby
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EDI88128CS
128Kx8
EDI88128LPS)
MIL-PRF-38535.
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Untitled
Abstract: No abstract text available
Text: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple
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EDI88130CS
128Kx8
EDI88130LPS)
EDI88130CS
128Kx8
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Untitled
Abstract: No abstract text available
Text: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple
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EDI88130CS
128Kx8
EDI88130LPS)
128Kx8
EDI88130CS
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5962-96692
Abstract: "NOR Flash" 1996 protect NOR Flash 1996 sector protect "case FF" microsemi
Text: WMF512K8-XXX5 512Kx8 MONOLITHIC NOR FLASH, SMD 5962-96692 FEATURES Access Times of 60, 70, 90, 120, 150ns Organized as 512Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 pin, Hermetic Ceramic, 0.600" DIP
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WMF512K8-XXX5
512Kx8
150ns
512Kx8
5962-96692
"NOR Flash" 1996 protect
NOR Flash 1996 sector protect
"case FF" microsemi
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Untitled
Abstract: No abstract text available
Text: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM FEATURES Access Times 15, 17, 20ns Low Power CMOS Revolutionary, Center Power/Ground Pinout JEDEC Approved Low Voltage Operation • 3.3V ± 10% Power Supply • 36 lead Ceramic SOJ Package 100
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WMS512K8V-XXX
512Kx8
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WMF512K8-xxx5
Abstract: No abstract text available
Text: WMF512K8-XXX5 512Kx8 MONOLITHIC NOR FLASH SMD 5962-96692* FEATURES Access Times of 60, 70, 90, 120, 150ns Organized as 512Kx8 Packaging Commercial, Industrial and Military Temperature Ranges • 32 pin, Hermetic Ceramic, 0.600" DIP
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WMF512K8-XXX5
512Kx8
150ns
512Kx8
ILOx32
MIL-STD-883
WMF512K8-xxx5
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Untitled
Abstract: No abstract text available
Text: WMS512K8V-XXX 512Kx8 MONOLITHIC SRAM FEATURES Access Times 15, 17, 20ns Low Power CMOS Revolutionary, Center Power/Ground Pinout JEDEC Approved Low Voltage Operation • 3.3V ± 10% Power Supply • 36 lead Ceramic SOJ Package 100
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WMS512K8V-XXX
512Kx8
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