Untitled
Abstract: No abstract text available
Text: ●Technical terms Type Operating Voltage Vp-p *S.P.L at 10cm Resonant Frequency Capacitance at 120Hz 25 ℃ (dB) (Hz) (nF) *Current Operating Temp. (mA) ( ℃) Storage Temp. ( ℃) * Value at 4000Hz/10Vp-p, square wave XY12C-G 1~30 ≥ 80 4000±500 28±30%
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120Hz
4000Hz/10Vp-p,
XY12C-G
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JAN2N760A
Abstract: 2N3692 2n2510 2N3565
Text: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18
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2N760
2N760A
JAN2N760A
2N929
JAN2N929
157kHz
2N3692
2n2510
2N3565
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Untitled
Abstract: No abstract text available
Text: RF2617 9 &'0$ 0 5 &(,9( $*& $03/,),(5 7\SLFDO $SSOLFDWLRQV • 3V CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Commercial and Consumer Systems • Supports Dual-Mode TACS/CDMA • Portable Battery Powered Equipment
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RF2617
RF2617
IS-95
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Untitled
Abstract: No abstract text available
Text: ADC1207S080 Single 12 bits ADC, up to 80 MHz with direct/ultra high IF sampling Rev. 03 — 2 July 2012 Product data sheet 1. General description The ADC1207S080 is a 12-bit Analog-to-Digital Converter ADC optimized for direct Input Frequency (IF) sampling and supporting the most demanding use conditions in ultra
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ADC1207S080
ADC1207S080
12-bit
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BGA736
Abstract: HSDPA BGA736L16 KC639 T1540 T0712
Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA736L16
TSLP-16-1
BGA736L16
TSLP-16-1-PO
BGA736
HSDPA
KC639
T1540
T0712
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hsdpa
Abstract: BGA736L16 TGS 800
Text: D a t a S he et , V 2. 1, J u l y 2 00 8 B G A 7 36 L1 6 Tri-Band HSDPA LNA 2 1 00 , 1 9 0 0/ 2 1 0 0 , 8 0 0 / 9 00 M H z S m a l l S i g n a l D i s c r et e s Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.
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TSLP-16-1
BGA736L16
TSLP-16-1-PO
hsdpa
TGS 800
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Untitled
Abstract: No abstract text available
Text: Data Sheet, V2.1, July 2008 BGA736L16 Tri-Band HSDPA LNA 2100, 1900/2100, 800/900 MHz RF & Protection Devices Edition 2008-07-03 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer
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BGA736L16
intellectu-16-1
BGA736L16
TSLP-16-1-PO
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cmad
Abstract: No abstract text available
Text: ADC1207S080 Single 12 bits ADC, up to 80 MHz with direct/ultra high IF sampling Rev. 03 — 2 July 2012 Product data sheet 1. General description The ADC1207S080 is a 12-bit Analog-to-Digital Converter ADC optimized for direct Input Frequency (IF) sampling and supporting the most demanding use conditions in ultra
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ADC1207S080
ADC1207S080
12-bit
cmad
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NF800-CEP
Abstract: NF1250-SS DSN40 no-fuse Circuit breaker Mitsubishi
Text: MITSUBISHI ELECTRIC Low Voltage Switchgears Moulded-Case Circuit Breakers Disconnectors WSS, PSS & Super Series 3 A – 1600 A Technical Catalogue 2004 AUDIN - 8, avenue de la malle - 51370 Saint Brice Courcelles - Tel : 03.26.04.20.21 - Fax : 03.26.04.28.20 - Web : http: www.audin.fr - Email : info@audin.fr
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RU-344041
ZA-1600
133207-D
D-40880
NF800-CEP
NF1250-SS
DSN40
no-fuse Circuit breaker Mitsubishi
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HT 1000-4
Abstract: condensateur ceramique 104 ET 3005 D3008 capacite 335 ceramique DR3003 3049A 2021E filtres ceramique
Text: Sommaire Summary Filtres cellule en C C type filters FC 030 20 FC 030 Haute température –55°C +175°C FC 030 21 FC 030 Haute température – 55°C +175°C pour microboîtiers FC 030 High temperature –55°C +175°C FC 030 22- 23 FC 030 High temperature
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2021E
HT 1000-4
condensateur ceramique 104
ET 3005
D3008
capacite 335
ceramique
DR3003
3049A
filtres ceramique
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Untitled
Abstract: No abstract text available
Text: TDA9910 12-bit, up to 80 Msample/s, Analog-to-Digital Converter ADC direct/ultra high IF sampling Rev. 03 — 17 May 2006 Preliminary data sheet 1. General description The TDA9910 is a 12-bit Analog-to-Digital Converter (ADC) optimized for direct IF sampling, and supporting the most demanding use conditions in ultra high IF radio
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TDA9910
12-bit,
TDA9910
12-bit
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Untitled
Abstract: No abstract text available
Text: BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz Data Sheet Revision 1.1, 2011-03-16 RF & Protection Devices Edition 2011-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA734L16
TSLP-16-1
BGA734L16
TSLP-16-1-PO
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Untitled
Abstract: No abstract text available
Text: BGA734L16 Low Power Tri-Band UMTS LNA 2100, 1900, 800 MHz Data Sheet Revision 1.1, 2011-03-16 RF & Protection Devices Edition 2011-03-16 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA734L16
TSLP-16-1
TSLP-16-1-PO
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Untitled
Abstract: No abstract text available
Text: RF2619 9 &'0$ 0 75$160,7 $*& $03/,), 5 7\SLFDO $SSOLFDWLRQV • 3V CDMA/FM Cellular Systems • General Purpose Linear IF Amplifier • Supports Dual-Mode AMPS/CDMA • Portable Battery-Powered Equipment • Supports Dual-Mode TACS/CDMA • Commercial and Consumer Systems
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RF2619
RF2619
IS-95
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Untitled
Abstract: No abstract text available
Text: eMi/rfi power line filters SmAll oUTliNe ChASSiS moUNT Adam Technologies, Inc. PlF SerieS ø.150 [3.80] .250 x .031 [6.30 x 0.80] 2.126 [54.00] .945 [24.00] 1.811 [46.00] 2.440 [62.00] .866 [22.00] RATED VOLTAGE 250V AC 250V AC 250V AC 250V AC RATED CURRENT
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PLF-10D32
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Untitled
Abstract: No abstract text available
Text: eMi/rfi power line filters SCrew iN ChASSiS moUNT Adam Technologies, Inc. PlF SerieS .250 x .031 [6.30 x 0.80] M3 2.050 [52.00] 1.575 [40.00] 2.047 [52.00] PLF-15DZB2 2.835 [72.00] RATED VOLTAGE 250V AC 250V AC 250V AC 250V AC RATED CURRENT 3 AMP 6 AMP 10 AMP
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PLF-15DZB2
PLF-3DZB21
PLF-6DZB21
PLF-10DZB21
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Untitled
Abstract: No abstract text available
Text: emi/rfi Power line Filters Screw In Chassis Mount PLF Series .250 x .031 [6.30 x 0.80] M3 2.050 [52.00] 1.575 [40.00] 2.047 [52.00] PLF-15DZB2 2.835 [72.00] RATED VOLTAGE 250V AC 250V AC 250V AC 250V AC RATED CURRENT 3 AMP 6 AMP 10 AMP 15 AMP GROUND CAPACITANCE
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PLF-15DZB2
PLF-3DZB21
PLF-6DZB21
PLF-10DZB21
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nf 742
Abstract: No abstract text available
Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION
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R06NY-8OUS-BOIS
nf 742
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Untitled
Abstract: No abstract text available
Text: RADIALL Département COAXIAL TECHNICAL DATA TITLE TITRE N .F / L C , F - 101. Rua Philibert Hoffmann Zona Industriali« OuMt 93116 - R06 NY-8OUS-BOIS Téléphona : 864-80-40 NOTICE TECHNIQUE PLAT, R 191.742 NF/LC.FADAPTOR, WITH FLANGE Séria . ADAPTOR NORMALISATION
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Untitled
Abstract: No abstract text available
Text: F-207 5am O NE PIECE LOW PRO FILE «f, s=nF! SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?SEL Insulator Material: Liquid Crystal Polymer Contact Material: Phosphor Bronze Plating: Au over 50p“ 1,27pm Ni Current Rating: 1A @ 80°C
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F-207
60VAC
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Untitled
Abstract: No abstract text available
Text: F-206-1 ONE P IEC E LOW PRO FILE «f, s=nF! SPECIFICATIONS For complete specifications and recommended P C B layouts see www.samtec.com?SEL Insulator Material: Liquid Crystal Polymer Contact Material: Phosphor Bronze Plating: Au over 50p“ 1,27pm Ni Current Rating: 1A @ 80°C
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F-206-1
60VAC
852-26904858-Fax:
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim
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NE76000
NE76000
NE760
IS12S21I
NE76000L
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P348A
Abstract: BFR37 SGS transistor C740 sgs-ates BFY75 2n2388 19142e C720 2N2219 transistor BFW68
Text: S G S -A T E S Semiconductors Transistors -N P N NPN Small Signal Transistors— continued REFERENCE TABLE Max P tot @ T ams—25*C LVceo lc Range @ lc Max mA (mA) NF (dB) Code (W) (V) h FE — BFR37 0.25 80-250 10 30 0.5-50 10 5Í8 750 BFW68 0.36 40 01-50
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BFR37
BFW68
30792F
BFX18
19041D
BFX31
BFY74
19068D
BFY75
30795X
P348A
BFR37 SGS
transistor C740
sgs-ates
2n2388
19142e
C720
2N2219 transistor
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SL100
Abstract: No abstract text available
Text: K eram ickÿ d isk o vÿ k o n d e n zato r RM 5,08m m Technické paramétré: M enovité napabe U N : Pozri dote Izolacnÿ o dp or - T yp 1: Iz o la in ÿ odpor Typ KEPF_ 001 001,2 001,5 002,2 004,7 010 015 022 027 033 047 056 068 100 150 220 330 470 Typ
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