InGaP HBT MMIC AMPLIFIER
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-6 GHz Product Features • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection
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GVA-84+
2002/95/EC)
GVA-84TB+
InGaP HBT MMIC AMPLIFIER
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GVA-84
Abstract: No abstract text available
Text: Surface Mount Monolithic Amplifier DC-6 GHz Product Features • DC to 6 GHz • Fixed 5V operation • High Gain, 24 dB typ. at 100 MHz • High IP3, 37 dBm typ. • High Pout, P1dB 20.5dBm typ • Unconditionally stable • Transient protected • Excellent ESD Protection
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GVA-84+
2002/95/EC)
GVA-84TB+
GVA-84
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Untitled
Abstract: No abstract text available
Text: RF Instrument Amplifier 50Ω TVA-63-183 6 to 18 GHz The Big Deal •WideBandwidth,6to18GHz InstrumentAmpliierGain24dB •OutputPower,18dBm •Isolation,62dB •SelfContainedPowerSupplywithselectable
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TVA-63-183
18dBm
AP1601
TVA-63-183
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Untitled
Abstract: No abstract text available
Text: Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Protected by US Patent 6,943,629 Typical Applications
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2002/95/EC)
ERA-05TB
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MMIC Amplifier Micro-X marking N
Abstract: No abstract text available
Text: Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Protected by US Patent 6,943,629 Typical Applications
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2002/95/EC)
ERA-05TB
MMIC Amplifier Micro-X marking N
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Untitled
Abstract: No abstract text available
Text: Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Protected by US Patent 6,943,629 ERA-5XSM+
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2002/95/EC)
ERA-05TB
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M1346-1
Abstract: GC957
Text: Coaxial Wideband Microwave Amplifier 50Ω 6 to 18 GHz ZX60-183+ The Big Deal • Wideband, 6-18 GHz • High Gain, Very Flat Response, 24 dB ±1.0 dB typ. • Excellent Isolation, 62 dB typ. • Unconditionally Stable performance CASE STYLE: GC957 Product Overview
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ZX60-183+
GC957
M1346-1
GC957
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ZX60-183
Abstract: No abstract text available
Text: Coaxial Wideband Microwave Amplifier ZX60-183+ 50Ω 6 to 18 GHz Features • wideband, 6 to 18 GHz • gain, 24 dB typ and flatness, ±1.0 dB typ. • output power at 1 dB compression, 18.0 dBm typ. • excellent isolation, 62 dB typ. • unconditionally stable
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ZX60-183+
GC957
ZX60-183-S+
2002/95/EC)
ZX60-183
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Untitled
Abstract: No abstract text available
Text: Ultra Wide Bandwidth Amplifier ZX60-14012L+ 50Ω 300 KHz to 14 GHz Features • Wide bandwidth, 300 kHz to 14 GHz • Reverse voltage connection protected • Over-voltage transient protected • Excellent flatness over frequency range, ±1dB typ. • +11dBm typ. output power at 1dB compression
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ZX60-14012L+
11dBm
GC957
ZX60-14012L-S+
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Untitled
Abstract: No abstract text available
Text: ADCDS-1603 16-Bit, 2.3 Megapixels/Second CCD Signal Processor For full details go to www.murata-ps.com/rohs FEATURES PRODUCT OVERVIEW n 2.3 MPPS The ADCDS-1603 is an application-specific CCD signal processor designed for electronic-imaging applications that employ CCD's charge coupled
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ADCDS-1603
16-Bit,
ADCDS-1603
16-bit
16-bit
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Magnetic Field Sensor
Abstract: max 232 DM-232
Text: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-232
DM-232
M-118
4400A/m
Magnetic Field Sensor
max 232
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magnetic sensor
Abstract: Magnetic Field Sensor DM-231
Text: DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-231
DM-231
M-118
4400A/m
magnetic sensor
Magnetic Field Sensor
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Untitled
Abstract: No abstract text available
Text: ADCDS-1603 16-Bit, 2.3 Megapixels/Second CCD Signal Processor For full details go to www.murata-ps.com/rohs FEATURES PRODUCT OVERVIEW n 2.3 MPPS The ADCDS-1603 is an application-specific CCD signal processor designed for electronic-imaging applications that employ CCD's charge coupled
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ADCDS-1603
16-Bit,
16-bit
40-pin,
674mW
ADCDS-1603
input51
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Untitled
Abstract: No abstract text available
Text: SLNA-180-26-30-SMA DATA SHEET 3 dB NF, 2 GHz to 18 GHz, Low Noise Broadband Amplifier with 14 dBm, 26 dB Gain, 24 dBm IP3 and SMA SLNA-180-26-30-SMA is a broadband high gain GaAs PHEMT MMIC-based coaxial low noise amplifier, operating in the 2 to 18 GHz frequency range. The amplifier
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SLNA-180-26-30-SMA
SLNA-180-26-30-SMA
14n-demand.
-broadband-amplifier-slna-180-26-30-sma-p
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Untitled
Abstract: No abstract text available
Text: 3 dB NF, 14 dBm, 2 GHz to 18 GHz, Low Noise Broadband Amplifier, 26 dB Gain, 24 dBm IP3, SMA TECHNICAL DATA SHEET PE15A3257 PE15A3257 is a broadband high gain GaAs PHEMT MMIC-based coaxial low noise amplifier, operating in the 2 to 18 GHz frequency range. The amplifier offers 14 dBm of P1dB and 26 dB small signal gain, with the gain flatness of ±2.0 dB, along with
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PE15A3257
PE15A3257
band-amplifier-26-db-gain-sma-pe15a3257-p
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G746
Abstract: SC102 STD02N STD02P YG6260 v130100 sanken audio sanken s-100
Text: STD02N and STD02P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 130 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,
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STD02N
STD02P
STD02P
G746
SC102
YG6260
v130100
sanken audio
sanken s-100
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STD03N
Abstract: STD03P 4 PIN THROUGH HOLE TRANSISTORS G746 SC102 YG6260 sanken high power audio amplifier sanken audio sanken audio amplifier
Text: STD03N and STD03P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 160 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,
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STD03N
STD03P
STD03P
SSE-23668
SSE-23669
4 PIN THROUGH HOLE TRANSISTORS
G746
SC102
YG6260
sanken high power audio amplifier
sanken audio
sanken audio amplifier
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sanken high power audio amplifier
Abstract: STD01N STD01P G746 SC102 YG6260 sanken audio
Text: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,
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STD01N
STD01P
STD01P
sanken high power audio amplifier
G746
SC102
YG6260
sanken audio
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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circuit for piezoelectric sensor
Abstract: powder level sensor circuit diagram drinks vending machine circuit inductive sensor oscillator circuit capacitive level sensor disc Piezoelectric Sensor piezoelectric sensor accuracy low cost vibration sensor piezoelectric sensors "Piezoelectric Sensor"
Text: B461_TS 1/7 Sensors LTS, TSP Series Mechanical Sensors Powder Level Sensors This unique piezoelectric powder level sensor was developed by TDK using a piezoelectric ceramic. The sensor is vibrated by an internal oscillator circuit. Vibration state changes when the vibrating sensor contacts powder, thereby detecting the existence of
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sanken high power audio amplifier
Abstract: darlington transistor for audio power application STD02P Pan Overseas pmt amplifier circuit B105 CF35 G746 SC102 STD02N
Text: STD02N and STD02P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 130 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,
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STD02N
STD02P
STD02P
T02-014EA-070820
sanken high power audio amplifier
darlington transistor for audio power application
Pan Overseas
pmt amplifier circuit
B105
CF35
G746
SC102
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T02012
Abstract: sanken high power audio amplifier pmt amplifier circuit STD01N Pan Overseas B105 CF35 G746 SC102 STD01P
Text: STD01N and STD01P Darlington Transistors for Audio Amplifiers Features and Benefits Description ▪ Built-in temperature compensation diodes ▪ High power 100 W handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation diodes,
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STD01N
STD01P
STD01P
T02-012EA-070820
T02012
sanken high power audio amplifier
pmt amplifier circuit
Pan Overseas
B105
CF35
G746
SC102
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Untitled
Abstract: No abstract text available
Text: STD03N and STD03P Darlington Transistors for Audio Amplifiers Features and Benefits Description Built-in temperature compensation diodes High power 160 W handling in a small package (TO-3P), for minimized heat sink requirements Built-in drivers and temperature compensation diodes,
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STD03N
STD03P
STD03P
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Western Electric
Abstract: vacuum tube amplifier Scans-0017375 271A
Text: Western Electric 271A Vacuum Tube Classification—Moderate-power triode with indirectly heated cathode Applications Audio-frequency amplifier or modulator where outputs up to about 3 watts are required. Radio-frequency power amplifier. Oscillator. Dimensions — Dim ensions, outline diagrams of the tube and base, and the arrangement of the
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1-C-3G-55C
Western Electric
vacuum tube amplifier
Scans-0017375
271A
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