S40S

Abstract: IrDA msp430 F6633 msp430x5 01A14 F6632 SLAS566C
Contextual Info: MSP430F663x www.ti.com SLAS566C – JUNE 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program

Diode smd code PJ 04

Contextual Info: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

IN329

Contextual Info: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four

CM 6631

Abstract: SLAS566B s7 300 cpu 315 2 dp hardware
Contextual Info: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

022AH

Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary

BGA reflow guide

Contextual Info: MSP430F663x SLAS566B – JUNE 2010 – REVISED AUGUST 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active:

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

Contextual Info: 19-3439; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6872/MAX6873 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and four general-purpose logic

Contextual Info: MSP430F663x www.ti.com SLAS566C – JUNE 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program

63FBGA

Abstract: KFN4G16Q2A
Contextual Info: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: OneNAND2G KFG2G16Q2M-DEBx OneNAND4G(KFH4G16Q2M-DEBx) OneNAND8G(KFW8G16Q2M-DEBx) Preliminary FLASH MEMORY KFG2G16Q2M KFH4G16Q2M KFW8G16Q2M 2Gb OneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TCA 785 application note

Abstract: KFM1G16Q2A TCA 700 v tca 785 128Mb DDR SDRAM samsung version 0.3 Samsung 2Gb 3V MLC Nand flash Samsung MLC Samsung oneNand Mux 63FBGA 1004C
Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) Preliminary FLASH MEMORY MuxOneNANDTM Preliminary Information Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFM1G16Q2A-DEBx 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2A-DEBx

KFM1G16Q2B

Abstract: ADQ - 32W 0234H 63FBGA KFM1G16Q2
Contextual Info: MuxOneNAND1Gb KFM1G16Q2B-DEBx FLASH MEMORY KFM1G16Q2B 1Gb MuxOneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: MSP430F663x www.ti.com SLAS566C – JUNE 2010 – REVISED AUGUST 2012 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active: 270 µA/MHz at 8 MHz, 3.0 V, Flash Program