808 nm
Abstract: RLTMDL_808_3000-5000MW
Text: RLTMDL-808 /3000~5000mW INFRARED DIODE LASER AT 808 nm Diode infrared laser module at 808 nm is made features of ultra compact, long lifetime, low cost and easy operating, which is used in measurement, communication, spectrum analysis, etc. Specifications
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RLTMDL-808
5000mW
264VAC
3000-5000mw
808 nm
RLTMDL_808_3000-5000MW
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet High Power CW Laser Diode LCG-808-1000M-9N Features - High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ Applications - Medical Printing Material Processing
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LCG-808-1000M-9N
LCG-808-1000M-9N
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RLCO-808-2000-TO3
Abstract: No abstract text available
Text: RLCO-808-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN
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RLCO-808-2000-TO3
RLCO-808-2000-TO3
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Untitled
Abstract: No abstract text available
Text: 808 nm High-Efficiency Single Emitters Compound Photonics’ “Generation C” 808 nm pump lasers ofer over 55% power conversion, low threshold, high slope eiciency, and excellent stability over temperature. The iber-coupled devices ofer 3.5 watts ex-iber in
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GR-468.
XM6-808C-10-353
XM6-808C-20-35case
QS4349
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-20H Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren
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BK81-20H
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GDOY7042
Abstract: No abstract text available
Text: Aktiv gekühlter Diodenlaser-Barren, 1200 W cw bei 808 nm Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm SPL E20N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 20 Laserbarren auf Mikrokanalkühler
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E20N81G2
GDOY7042
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur • Zuverlässiges, kompressiv verspanntes
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BG81-9S,
BG81-2S
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RLCO-808-5000-TO3
Abstract: No abstract text available
Text: RLCO-808-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 5 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN
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RLCO-808-5000-TO3
RLCO-808-5000-TO3
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-5S Vorläufiges Datenblatt / Preliminary data sheet Besondere Merkmale Features • • • • • Unmontierter Laserbarren
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BS81-5S
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BG81-9S, SPL BG81-2S Besondere Merkmale Features • Unmontierter Laserbarren • Hocheffiziente MOVPE Quantenfilmstruktur
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BG81-9S,
BG81-2S
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Laser Diode 808 2 pin 1000 mw
Abstract: CW laser diode 808 nm 1200 mw 808 nm 1000 mw 808 nm 1000 mw laser diode
Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Power: 1000 mW, CW Integrated Monitor Diode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement
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LCG-808-1000M-9N
lcg-808-1000m-9n
Laser Diode 808 2 pin 1000 mw
CW laser diode
808 nm 1200 mw
808 nm 1000 mw
808 nm 1000 mw laser diode
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RLCO-808-0500-F
Abstract: No abstract text available
Text: RLCO-808-0500-F TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 500 mW Package: 4-pin DIL Specifications Item Optical Specifications CW Output Power
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RLCO-808-0500-F
SMA-905
RLCO-808-0500-F
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Un-mounted Laser Bars, 82.5% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-9S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor)
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BS81-9S
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 50% Füllfaktor, 808 nm Un-mounted Laser Bars, 50% Fill-factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BK81-12S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 25 Emittern (50% Füllfaktor)
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BK81-12S
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Untitled
Abstract: No abstract text available
Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement
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LCG-808-1000M-9N
lcg-808-1000m-9n
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Untitled
Abstract: No abstract text available
Text: High Power CW Laser Diode LCG-808-1000M-9N FEATURES High-efficiency MQW structure Wavelength: 808 nm Typ. Optical Powrer: 1000 mW, CW Integrated Monitordiode Standard Package: 9 mm ∅ APPLICATIONS Medical Printing Material Processing Illumination Measurement
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LCG-808-1000M-9N
lcg-808-1000m-9n
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RLCO-808-3000-TO3
Abstract: No abstract text available
Text: RLCO-808-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 3 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN
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RLCO-808-3000-TO3
RLCO-808-3000-TO3
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GDOY7031
Abstract: No abstract text available
Text: Aktiv gekühlter Diodenlaser-Barren, 450 W qcw bei 808 nm Actively Cooled Diode Laser Bar, 450 W qcw at 808 nm SPL E03N81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserstack mit 3 Laserbarren auf Mikrokanalkühler
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E03N81S9
GDOY7031
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BS816
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 82.5% Füllfaktor, 808 nm Unmounted Laser Bars, 82.5% Filling Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BS81-6 Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 75 Emittern (82.5% Füllfaktor)
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BS81-6
BS816
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Untitled
Abstract: No abstract text available
Text: Unmontierte Laserbarren, 30% Füllfaktor, 808 nm Unmounted Laser Bars, 30% Fill-Factor, 808 nm Lead Pb Free Product - RoHS Compliant SPL BX81-2S Besondere Merkmale Features • • • • • Unmontierter Laserbarren Design mit 19 Emittern (30% Füllfaktor)
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BX81-2S
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GDOY7041
Abstract: No abstract text available
Text: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01Y81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Laserstrahlung durch FAC-Linse • Laserbarren auf Mikrokanalkühler
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E01Y81G2
GDOY7041
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GDOY7044
Abstract: MATERIAL SAFETY
Text: Passiv gekühlter Diodenlaser-Barren, 140 W cw bei 808 nm Passively Cooled Diode Laser Bar, 140 W cw at 808 nm SPL MY81S9 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter
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MY81S9
GDOY7044
MATERIAL SAFETY
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GDOY7041
Abstract: No abstract text available
Text: Aktiv gekühlter Diodenlaser-Barren, 60 W cw bei 808 nm Actively Cooled Diode Laser Bar, 60 W cw at 808 nm SPL E01N81G2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Laserbarren auf Mikrokanalkühler • Für Dauerstrich- CW und
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E01N81G2
GDOY7041
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GDOY7044
Abstract: No abstract text available
Text: Passiv gekühlter Diodenlaser-Barren, 35 W cw bei 808 nm Passively Cooled Diode Laser Bar, 35 W cw at 808 nm SPL MY81X2 Vorläufiges Datenblatt / Preliminary Data Sheet Besondere Merkmale Features • Kollimierte Strahlung durch FAC-Linse • Laserbarren auf passiv gekühlter
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MY81X2
GDOY7044
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