808nm
Abstract: 808nm laser diode laser diode lifetime 100C 180C 300C CM23
Text: datasheet TE cooled laser diode modules 300-0600-00 series Key features 808nm ● Visible light λ = 808nm ● Elliptical beam ● Exceptional wavelength & power stability ● Active temperature control ● Increased laser diode lifetime ● User adjustable optics
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808nm
808nm
120mW.
808nm laser diode
laser diode lifetime
100C
180C
300C
CM23
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Laser module
Abstract: infrared Laser diode Laser Diode 4 pin 808nm-5mW 10 pin laser diode laser diode symbols IR-Laser-Diode 808nm Laser-Diode 808 NM808-5 laser diode 12 pin
Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diode
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808nm-5mW
N808-5
NM808-5
MM808-5
MM808nm
com/mmd808nm5m
Laser module
infrared Laser diode
Laser Diode 4 pin
10 pin laser diode
laser diode symbols
IR-Laser-Diode 808nm
Laser-Diode 808
NM808-5
laser diode 12 pin
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Untitled
Abstract: No abstract text available
Text: 808nm 2W CW Laser Diode Preliminary Data L8828-62 FEATURES: High output power & high brightness 2W CW Output Power 100 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact APPLICATIONS: Unit:mm Printing
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808nm
L8828-62
808nm
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LG81
Abstract: No abstract text available
Text: SIRILAS Laserdiodenarray 30 W cw bei 808nm SIRILAS® Laser Diode Array 30 W cw at 808nm SPL LG81 Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material
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808nm
LG81
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Untitled
Abstract: No abstract text available
Text: 808nm 2W CW Laser Diode Preliminary Data L8828-72 FEATURES: High output power & high brightness 2W CW Output Power 100 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact Unit:mm APPLICATIONS: Printing
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808nm
L8828-72
808nm
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Untitled
Abstract: No abstract text available
Text: 808nm 0.5W CW Laser Diode Preliminary Data L8933-72 FEATURES: High output power & high brightness 0.5W CW Output Power 50 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact APPLICATIONS: Unit:mm Printing
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808nm
L8933-72
808nm
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 808nm 7.5W Detachable Laser Diode Module Functions: PD,TEC,Thermistor,Detachable Fiber,Aiming Beam, Fiber Detector G808-7.5WD-14HHL-PTFS Features Features Output power: 7.5W Wavelength: 808nm Aiming beam: 650nm Fiber coupling for: 200 m,0.22NA
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808nm
G808-7
5WD-14HHL-PTFS
808nm
650nm
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Untitled
Abstract: No abstract text available
Text: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5(ψ9.0mm ),With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)
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808nm
LCU80E041A-preliminary
500mW
lcu80e041a
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808nm 1W laser diode
Abstract: 808nm 1W L87637
Text: 808nm 1W CW Laser Diode Preliminary Data L8763-72 FEATURES: High output power & high brightness 1W CW Output Power 50 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact Unit:mm APPLICATIONS: Printing
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808nm
L8763-72
808nm
808nm 1W laser diode
808nm 1W
L87637
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808nm VCSEL Laser
Abstract: PSM-BC-003-W0808 808nm laser
Text: 3mW Single-Mode 808nm VCSEL Diode Part # PSM-BC-003-W0808 • Vertical-Cavity Surface-Emitting Laser technology • >3mW single-fundamental-mode power at 808nm • Custom wavelengths available 808-1064nm • Custom packaging available (submount, C-mount, TO can)
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808nm
PSM-BC-003-W0808
808nm
808-1064nm)
808nm VCSEL Laser
PSM-BC-003-W0808
808nm laser
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Untitled
Abstract: No abstract text available
Text: SIRILAS Laserdiodenarray 30 W cw bei 808nm SIRILAS® Laser Diode Array 30 W cw at 808nm SPL LG81 Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material
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808nm
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Untitled
Abstract: No abstract text available
Text: SIRILAS Laserdiodenarray 30 W cw bei 808nm SIRILAS® Laser Diode Array 30 W cw at 808nm SPL LG81 Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb • Zuverlässiges InGaAs/GaAs kompressiv verspanntes Halbleiter-Material
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808nm
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808nm laser diode
Abstract: diode laser 808nm 200mW laser diode 808nm 808nm TO18 Laser 808nm 300 mw Laser Diode 250mW P200 300 mw IR Laser Diode laser diode 200mw 808nm 300 mw laser diode
Text: SLD-808-P200-01 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-01 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) Bottomview ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter
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SLD-808-P200-01
808nm
250mW
125mW
808nm laser diode
diode laser 808nm 200mW
laser diode 808nm
TO18 Laser 808nm 300 mw
Laser Diode 250mW
P200
300 mw IR Laser Diode
laser diode 200mw
808nm 300 mw laser diode
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LG81
Abstract: GTOY6607 808nm laser diode 808nm pulsed
Text: SIRILAS Laserdiodenarray 30 W cw bei 808nm SIRILAS® Laser Diode Array 30 W cw at 808nm Lead Pb Free Product - RoHS Compliant SPL LG81 Vorläufiges Datenblatt / Preliminary Datasheet Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb
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808nm
LG81
GTOY6607
808nm laser diode
808nm pulsed
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808nm laser diode
Abstract: laser diode 808nm diode laser 808nm 200mW laser diode 200mw TO18 Laser 808nm 300 mw ir laser 808nm laser 808nm P200 CORP400
Text: SLD-808-P200-02 UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode SLD-808-P200-02 Specifications Device Package Type Laser Diode TO-18 φ5.6mm •External dimensions(Units : mm) ■Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Po Optical Output
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SLD-808-P200-02
808nm
250mW
125mW
808nm laser diode
laser diode 808nm
diode laser 808nm 200mW
laser diode 200mw
TO18 Laser 808nm 300 mw
ir laser
808nm laser
P200
CORP400
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TO18 Laser 808nm 300 mw
Abstract: IR Laser diode laser diode bare chip
Text: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80E0075-preliminary
808nm
886-3-g
TO18 Laser 808nm 300 mw
IR Laser diode
laser diode bare chip
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Untitled
Abstract: No abstract text available
Text: SIRILAS Laserdiodenarray 30 W cw bei 808nm SIRILAS® Laser Diode Array 30 W cw at 808nm Lead Pb Free Product - RoHS Compliant SPL LG81 Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb • Zuverlässiges InGaAs/GaAs kompressiv
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808nm
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Untitled
Abstract: No abstract text available
Text: Passiv gekühlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 808nm Lead Pb Free Product - RoHS Compliant SPL LG81-P Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb
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808nm
LG81-P
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laser diode bare chip
Abstract: 808nm
Text: 808nm 0.5W CW Laser Diode Preliminary Data L8933-62 FEATURES: High output power & high brightness 0.5W CW Output Power 50 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact APPLICATIONS: Unit:mm Printing
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808nm
L8933-62
808nm
laser diode bare chip
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K81S09W-6
Abstract: K81S09W-10
Text: 808nm HHL Packaged Window Output Diode Laser K81S09W-6.00W K81S09W-10.00W Key Features: 6W, 10W output power 808nm wavelength Window packages Applications: Solid-state laser pumping Medical/ophthalmic Meterials processing Graphic arts
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808nm
K81S09W-6
K81S09W-10
bwt/808nm/
k81s09w
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Untitled
Abstract: No abstract text available
Text: 808nm 0.5W CW Laser Diode Preliminary Data L8933-42 FEATURES: High output power & high brightness 0.5W CW Output Power 50 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 10nm Multimode High Stability Long Life Compact Unit:mm APPLICATIONS: Printing
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808nm
L8933-42
808nm
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Untitled
Abstract: No abstract text available
Text: Passiv gekühlter SIRILAS Diodenlaser 15 W cw bei 808nm Conductively cooled SIRILAS® Laser Diode Array 15 W cw at 808nm Lead Pb Free Product - RoHS Compliant SPL LG81-P Besondere Merkmale Features • Kostengünstige Strahlquelle für Dauerstrichund Pulsbetrieb
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808nm
LG81-P
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U-CP-80C0055-preliminary
Abstract: 808nm 300mw laser diode laser diode 300mw TO-CAN 808nm 300mW TO18 Laser 808nm 300 mw 808nm laser diode laser diode bare chip
Text: U-CP-80C0055-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80C0055-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*400*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)
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U-CP-80C0055-preliminary
808nm
886-3-g
U-CP-80C0055-preliminary
808nm 300mw laser diode
laser diode 300mw
TO-CAN
808nm 300mW
TO18 Laser 808nm 300 mw
808nm laser diode
laser diode bare chip
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808nm
Abstract: No abstract text available
Text: 808nm 2W CW Laser Diode Preliminary Data L8828-71 FEATURES: High output power & high brightness 2W CW Output Power 100 m x 1μm Emitting Area Peak Emission Wavelength 808nm +/- 5nm Multimode High Stability Long Life Compact Unit:mm APPLICATIONS: Pumping source for Solid State Laser
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808nm
L8828-71
808nm
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