Untitled
Abstract: No abstract text available
Text: TO SH IBA TC9327AF TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327AF DTS MICROCONTROLLER DTS-21 The TC9327AF is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.
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TC9327AF
DTS-21)
TC9327AF
230-MHz
80-pin,
LQFP80-P-1212-0
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t2d02
Abstract: 100011
Text: TOSHIBA TC9327AF TO SHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC9327AF DTS MICROCONTROLLER DTS-21 The TC9327AF is a 4-bit CMOS microcontroller for single-chip digital tuning systems, featuring a built-in 230-MHz prescaler, PLL, and LCD drivers.
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TC9327AF
DTS-21)
TC9327AF
230-MHz
80-pin,
t2d02
100011
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A2415
Abstract: No abstract text available
Text: 2 S K 2 1 4 7 - 1 FUJI P O W E R M O S - F E T R N-CHANNEL SILICON POWER MOS-FET F A P -II S E R IE S I Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V cs= ± 3 0V Guarantee
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20Kf2)
A2415
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A2103
Abstract: No abstract text available
Text: 2SK1017-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - II S E R I E S •Outline Drawings ■ Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CSS = ± 3 0 V Guarantee
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2SK1017-01
ES7H30
A2103
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f11u
Abstract: 2sk1916 2SK1916-01R 1916-01R O41 DIODE a2267
Text: SK1916-01R FUJI PO W ER M O S-F ET N-CHANNEL SILICON POWER MOS-FET F - I I I Features S E R I E S Outline Drawings ►High speed switching ►Low on-resistance ►Mo secondary breakdown ►Low driving power ►High voltage 'V Ge; = ±30V Guarantee •Avalanche-proof
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2SK1916-01R
f11u
2sk1916
2SK1916-01R
1916-01R
O41 DIODE
a2267
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2SJ73
Abstract: 2SJ473-01L JEDEC-TO-252
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DRAWN CHECKED NAME APPROVED Fuji Electric Co.,Ltd. I DWG. NO. DATE 1//3 Y 0 2 57-R -004 a 1 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S
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2SJ473-01L
0257-R-004a
2SJ473-01
0257-R-003a
80/is
0257-R-003a
2SJ73
JEDEC-TO-252
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2SK2026-01
Abstract: 2SK2026 SC-65 T151 a2361
Text: 2SK2026-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - IIA I Features S E R I E S Outline Drawings 'High speed switching ' Low on-resistance 'No secondary breakdown Low driving power ' High voltage •Vos“ ± 3 0 V Guarantee 'Avalanche-proof
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2SK2026-01
SC-65
2SK2026-01
2SK2026
SC-65
T151
a2361
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003A
Abstract: 2SK2759 2SK2759-01R
Text: S P E C I F I C A T I O N T E N T A T I V E DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 7 5 9 - 0 1R SPEC. No. F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJLid
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2SK2759-01R
0257-R-004a
Dpu191
150-003a
0257-R-003a
003A
2SK2759
2SK2759-01R
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CQ 419
Abstract: oms 450 ifr mosfet 2SK2165-01 SC-65 2SK2165
Text: 2SK2165-01 FUJI PO W ER M O S-F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features Outline Drawings • Hiiih current • Low on-resistance • No secondary breakdown • Low driving power • Hicjh forward Transconductance • Avalanche-proof
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2SK2165-01
SC-65
CQ 419
oms 450
ifr mosfet
2SK2165-01
SC-65
2SK2165
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2SJ474-01L
Abstract: 2SJ474-01S
Text: SPECIFICATION D E V IC E N A M E : P o w er M O S F E T T Y P E N AM E : 2 S J 4 7 4 -0 1 L .S S P E C . NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED . 2 Y 0257-R-004a
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2SJ474-01L
2SJ474-01S
0257-R-004a
0257-R-003a
2SJ474-01S
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2SK2147
Abstract: 2SK2147-01R A2414
Text: 2 S K 2 1 4 7 - 0 1 FUJI POWER MOS-FET R N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V GS= ± 30 V Guarantee
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2SK2147-01R
20Kii)
bhts30s3#
2SK2147
2SK2147-01R
A2414
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K2022
Abstract: T151 A2349 2SK2022-01
Text: 2SK2022-01 MR FUJI P O W E R M O S-F ET N-CHANNEL SILICON POWER MOS-FET F A P - IIA • Features S E R IE S Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V cs= ±30V Guarantee
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2SK2022-01
Tc-25Â
SC-67
K2022
T151
A2349
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K2003
Abstract: A2329
Text: 2SK2003-01MR FU JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V g; = ± 3 0 V Guarantee
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2SK2003-01MR
K2003
A2329
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A2293
Abstract: No abstract text available
Text: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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2SK1943-01
20Kfi)
zgTi30
A2293
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power M OSFET TYPE NAME : 2SJ476-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. DRAW N CHECKED 3 ËÎ V flO R T -P - A fL l-a 1.Scope This specifies Fuji Power M OSFET 2SJ476-01L.S
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2SJ476-01L
0257-R-003a
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L295V
Abstract: KSD1 110 p1403 equivalent
Text: TOSHIBA TC9317F TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 9 317 F DTS MICROCONTROLLER DTS-21 The TC9317F is a 4bit CMOS microcontroller for digital tuning systems. It is capable of functioning at a low voltage of 3V and features a built-in PLL and LCD drivers.
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TC9317F
DTS-21)
TC9317F
LQFP80-P-1212-0
L295V
KSD1 110
p1403 equivalent
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003A
Abstract: 2SJ473-01L
Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S
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2SJ473-01L
0257-R-004a
2SJ473-01
0257-R-003a
003A
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12V lead acid battery
Abstract: No abstract text available
Text: e r urm _ LTC1042 Window Comparator TECHNOLOGY FCflTU M S DCSCRIPTIOfl • Micropower 1 .5/tW 1 Sample/Second Th e LT C 10 4 2 is a monolithic C M O S window com parator ■ W ide Supply Range— + 2.8V to + 16V manufactured ■ High Accuracy Center Error ± 1 m V M ax
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LTC1042
LTC1042
12V lead acid battery
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diode in40
Abstract: 2SJ474-01L 2SJ474-01S
Text: SPECIFICATION D E V IC E N A M E : Power M O S F E T TYPE NAME : 2 SJ474-01L.S S P E C . NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAWN CHECKED . 2 Y 0257-R-004a 1 1.Scope
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2SJ474-01
0257-R-004a
2SJ474-01L
0257-R-003a
80jWs
0257-R-003a
diode in40
2SJ474-01S
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12V lead acid battery
Abstract: LTC1042 "wind powered" 6V charger diagram LEAD ACID CHARGER 8 amp 12V SOLAR 12v wind powered battery charger "lead acid" battery monitor solar panel 6v to 12v LM334 LT1004-2 LTC1042C
Text: r r u v m ^ • / TECHNOLOGY _LTC1042 Window Comparator FCATURCS DCSCftlPTIOil ■ Micropower 1 .5/tW 1 Sample/Second Th e LT C 10 4 2 is a monolithic C M O S window com parator ■ W ide Supply Range— + 2.8V to + 16V manufactured ■ High Accuracy
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LTC1042
LTC1042
12V lead acid battery
"wind powered" 6V charger
diagram LEAD ACID CHARGER 8 amp 12V SOLAR
12v wind powered battery charger
"lead acid" battery monitor
solar panel 6v to 12v
LM334
LT1004-2
LTC1042C
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diode A7A
Abstract: 003A 2SJ473-01L MOSFET 2302 EIAJ-SC-64
Text: SPECIFICATION DEVICE NAME : TYPE NAME Power MOSFET : 2SJ473-01L.S SPEC. NO. Fuji Electric Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co.,Ltd. CHECKED DWG. NO. DRAW N 1//3 Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SJ473-01 L,S
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2SJ473-01L
0257-R-004a
2SJ473-01
0257-R-003a
0257-R-003a
diode A7A
003A
MOSFET 2302
EIAJ-SC-64
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oms 450
Abstract: 2SK2166-01
Text: 2SK2166-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ - _ _ _ _ _ _ _ _ _ FAP-IIIA SERIES Outline Drawings • Features • High current • Low o n-resistance • No secondary b reakdow n • Low driving p o w e r
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2SK2166-01
20Kf2)
A2-310
oms 450
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SM6G14
Abstract: triac 400v 80a GTO 100A 750V S6080b SM16G14 SH5J12U TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS 6111 triode TRIAC 1000A triac 1200V 50A
Text: 9097250 TOSHIBA DISCRETE/OPTO 39C 0 2 2 1 6 3T DEj|TOTTSSGQ00E21b & THYRISTORS \ I PH A SE CO N TRO L THYRISTO RS Average On-State Current I P .4 8 -P .8 1 - » P e a k O f f - S ta te V oltage and R e v e rs e V oltage 100 V 200V O .IA SF 0R 1B 42 S F O R I D42
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000221b
SF0R1B42
SF0R1G42
SF0R3B42
SF0R3D42
SF0R3G42
SF0R3J42
SF1B12
SF1D12
SF1G12
SM6G14
triac 400v 80a
GTO 100A 750V
S6080b
SM16G14
SH5J12U
TOSHIBA PHASE CONTROL HIGH SPEED THYRISTORS
6111 triode
TRIAC 1000A
triac 1200V 50A
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8355 8755 intel microprocessor block diagram
Abstract: MCS-48 8755 intel microprocessor block diagram MCS48 instruction set intel 8755 USART 8251 expanded block diagram MCS-48 Manual The Expanded MCS-48 System mcs48 internal architecture of 8251 USART
Text: in t e i # ° r <p r?> > V 9 Intel C o rp o ra tio n , 1977 98-413B Price S1 .OO Related Intel Publications “MCS-48 Microcomputer User's Manual" "Using the 8251 Universal Synchronous/Asynchronous “8255 Programmable Peripheral Interface Applications"
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98-413B
MCS-48TM
NL-10Q6
8355 8755 intel microprocessor block diagram
MCS-48
8755 intel microprocessor block diagram
MCS48 instruction set
intel 8755
USART 8251 expanded block diagram
MCS-48 Manual
The Expanded MCS-48 System
mcs48
internal architecture of 8251 USART
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