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    80N50Q2 Search Results

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    80N50Q2 Price and Stock

    IXYS Corporation IXFN80N50Q2

    MOSFET N-CH 500V 72A SOT227B
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    IXYS Corporation IXFL80N50Q2

    MOSFET N-CH 500V 55A ISOPLUS264
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    IXYS Corporation IXFB80N50Q2

    MOSFET N-CH 500V 80A PLUS264
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    80N50Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    80N50Q2

    Abstract: 0169E 123B16
    Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol


    Original
    PDF 80N50Q2 OT-227 E153432 728B1 123B1 728B1 065B1 80N50Q2 0169E 123B16

    80N50Q2

    Abstract: 80n5 IXFB 80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFB 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr PLUS 264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 80N50Q2 264TM 065B1 728B1 123B1 728B1 80N50Q2 80n5 IXFB 80N50Q2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFB 80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr PLUS 264TM (IXFB) Symbol Test Conditions


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    PDF 80N50Q2 264TM 728B1 123B1 065B1

    80N50Q2

    Abstract: IXFL80N50Q2
    Text: HiPerFETTM Power MOSFETs IXFL 80N50Q2 VDSS = 500 V ID25 = 64 A Ω RDS on = 66 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 80N50Q2 405B2 80N50Q2 IXFL80N50Q2

    80N50Q2

    Abstract: 16-20pF
    Text: Advance Technical Information HiPerFET TM Power MOSFETs IXFB 80N50Q2 Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr = V DSS ID25 = RDS on = ≤ trr 500 V 80 A Ω 55 mΩ 250 ns PLUS 264TM (IXFB) Symbol Test Conditions


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    PDF 80N50Q2 264TM 728B1 80N50Q2 16-20pF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV /dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol


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    PDF 80N50Q2 OT-227 E153432 728B1 123B1 065B1

    IXFN SOT227

    Abstract: 80n5
    Text: HiPerFETTM Power MOSFET IXFN 80N50Q2 VDSS = 500 V ID25 = 80 A Ω RDS on = 60 mΩ ≤ 250 ns trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions S Maximum Ratings


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    PDF 80N50Q2 OT-227 E153432 IXFN SOT227 80n5

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2