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    81 210 W 28 Search Results

    81 210 W 28 Result Highlights (5)

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    81 210 W 28 Price and Stock

    Samtec Inc MTSW-128-11-G-S-210

    Headers & Wire Housings Variable Height PCB Header Strips, 0.100" pitch
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTSW-128-11-G-S-210
    • 1 $3.9
    • 10 $3.9
    • 100 $3.12
    • 1000 $2.16
    • 10000 $1.21
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    Alpha Wire 2814/2 WH001

    Multi-Conductor Cables 22 AWG 2 Conductor High-Low Temperature Cable, Braid 600V 1000ft White
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2814/2 WH001
    • 1 $7620.15
    • 10 $7620.15
    • 100 $7620.15
    • 1000 $7620.15
    • 10000 $7620.15
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    Alpha Wire 2817/2 WH001

    Multi-Conductor Cables 20 AWG 2 Conductor High-Low Temperature Cable, Braid 600V 1000ft White
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2817/2 WH001
    • 1 $12229.51
    • 10 $12229.51
    • 100 $12229.51
    • 1000 $12229.51
    • 10000 $12229.51
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    Alpha Wire 2819/2 WH001

    Multi-Conductor Cables 18 AWG 2 Conductor High-Low Temperature Cable, Braid 600V 1000ft White
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 2819/2 WH001
    • 1 $13688.44
    • 10 $13688.44
    • 100 $13688.44
    • 1000 $13688.44
    • 10000 $13688.44
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    Royal Electronic Factory (Thailand) Co Ltd 1210W4J0281T5E

    Thick Film Resistors - SMD RMC 1210 1/4W 5% T/R-5000
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1210W4J0281T5E
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    • 10000 $0.006
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    Find more 81 210 W 28 price and stock on Findchips.com

    81 210 W 28 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    81 210 W

    Abstract: 81 210 w 12 enclosure 7023R
    Text: Series 1 (Series 1) 3R/4/12 Painted 3R/4/12 Painted w/Cntl. Trans. 4/4X Stainless 4/4X Stainless w/Cntl. Trans. 3R/4/12 Painted 3R/4/12 Painted w/Cntl. Trans. 4/4X Stainless 4/4X Stainless w/Cntl. Trans. (Series 1) 81/4 101/2 (267) 271/2 (698) (210) 251/8


    Original     		PDF 3R/4/12 81 210 W 81 210 w 12 enclosure 7023R

    RBS 2216 specifications

    Abstract: MIL-T-16366 K975 RBS 2216 Maintenance manual UL 486A pull test K974 RBS 6600 STA-KON LUG str f 6655 WT2130A
    Text: 412031.K01 STAKON 3/5 3/14/03 10:28 AM Page 1 Terminal Products and Tools Terminals Overview .K2-K5 Nylon Insulated Ring.K6-K10 Vinyl Insulated Ring.K11-K12, K18


    Original     		PDF K6-K10 K11-K12, K13-K15 K20-K21 K23-K24 ViFF29 RG267 RG717 RG727 RG737 RBS 2216 specifications MIL-T-16366 K975 RBS 2216 Maintenance manual UL 486A pull test K974 RBS 6600 STA-KON LUG str f 6655 WT2130A

    Untitled

    Abstract: No abstract text available
    Text: PHOTOMULTIPLIER TUBES R3788, R4332 High Sensitivity, Bialkali Photocathode 28 mm 1-1/8 Inch Diameter, 9-Stage, Side-On Type FEATURES ●Wide Spectral Response R3788 . 185 nm to 750 nm R4332 . 160 nm to 750 nm


    Original     		PDF R3788, R4332 R3788 R4332) SE-171-41 TPMS1021E02

    FL 210 transistor

    Abstract: LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w
    Text: = - = -’ = RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz LF2805A Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor AppIications . *Broadband Linear Operation


    Original     		PDF LF2805A L-560 FL 210 transistor LF2805A 1000 MHz transistor 5W RF TRANSISTOR 1 WATT transistor 5w

    transistor c 2499

    Abstract: transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499
    Text: E XF .- an AMP company r = RF MOSFET Power Transistor, 2 - 175 MHz 12OW, 28V DU28120T Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices


    Original     		PDF DU28120T S-16OpF DU26120T transistor c 2499 transistor tj 2499 12OW capacitor 4 f XF 020 transistor D 2499 DU28120T 22 pf trimmer capacitor 81 210 W transistor 2499

    ZWS300

    Abstract: No abstract text available
    Text: ZWS300 NEMIC-LAMBDA SPECIFICATIONS A177-01-01-C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODEL ITEMS Nominal Output Voltage Maximum Output Current Convection Maximum Output Current(Forced air) Maximum Peak Output Current


    Original     		PDF ZWS300 A177-01-01-C 100/200VAC) A177-01-02_ A177-01-03_ A177-01-02 ZWS300

    top 258 mn

    Abstract: PA-QFE304SA-P-S-01
    Text: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 A 301 303 300 299 294 289 284 279 274 269 265 263 258 253 248 243 238 233 235 229 225 B C D E F G H J K K M N 1 2 304 302 297 292 287 282 277 272 266 261 256 251 246 241 236 231 232 230 227 7 4 228 224


    Original     		PDF PA-QFE304SA-P-S-01 top 258 mn

    UNELCO

    Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor

    5251f

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L 5251f

    XZ 142

    Abstract: D-H7B
    Text: Zubehör Zylinder ISO 6431 Accessories Cylinders ISO 6431 Schwenklager Swivel Bearing Female swivel bearing with bolt CD Schwenklager mit Bolzen MR CS L US XD+ Bestell-Nr./Order No. Ø CS US L XD CD MR 18.001.01 32 26 45 12 142 10 11 18.001.02 40 28 52 15


    Original     		PDF

    DL110

    Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
    Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L/D MRF275L DL110 VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179

    VK200 19 4B INDUCTOR

    Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    Original     		PDF MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor

    Untitled

    Abstract: No abstract text available
    Text: 16 15 14 13 12 9 10 1 1 8 Ï 6 7 5 4 DWG STATUS MISSING NUMBERS DATE STG REV CHG 12-21, 28JN99 R 001 — SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER 3 TOTAL NO. OF SYMBOLS


    OCR Scan     		PDF 28AU99 28JN99 08MR00 04AU00 14JN96 17JN96 26JN96

    J5021-0

    Abstract: 1200W MOSFET power J50 mosfet
    Text: an A M P co m p a n y RF MOSFET Power Transistor, 120W, 28V 2 - 1 7 5 MHz DU28120T V2.00 Features • • • • • N -Channel E n han cem en t M ode D evice DM OS Structure Low er C ap acitan ces for B roadb an d O p eration High Saturated O u tp u t Pow er


    OCR Scan     		PDF DU28120T 4-40pF 1000pF DU28120T J5021-0 1200W MOSFET power J50 mosfet

    AM-140

    Abstract: AMC-140
    Text: a/7 A M P com pany High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 V2.00 FP-9 Features • +47 dBm Typical Midband Third O rder Intercept • +28 dBm Typical Midband 1 dB Compression • 5.4 dB Typical Midband Noise Figure 1.130 ±0.015 28.7 ±0.4


    OCR Scan     		PDF AM-/AMC-140 AM-140 AMC-140

    Untitled

    Abstract: No abstract text available
    Text: Æ a n A M P com pany High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 FP-9 Features • +4? dBm Typical M idband Third O rder Intercept • +28 dBm Typical M idband 1 dB Com pression • 5.4 dB Typical M idband Noise Figure ¡1 : NTT- Guaranteed Specifications*


    OCR Scan     		PDF AM-/AMC-140 CRAMS171

    AMC-138

    Abstract: AM-138
    Text: M a n A M P ,c o m p a n y High Performance Amplifiers, 25 dB Gain 5 - 200 MHz AM-/AMC-138 V2.00 Features 1.130 1 0.015 - 28.7 t 0.4 FP-9 • +49 dBm Typical Midband Third Order Intercept • +29 dBm Typical Midband 1 dB Compression • 5.3 dB Typical Midband Noise Figure


    OCR Scan     		PDF AM-/AMC-138 25dBm AMC-138 AM-138

    Untitled

    Abstract: No abstract text available
    Text: 2 3 A 5 4 6 x X Lochb i Id Kontaktanordnung board d r i l l i n g s c o n ta c t arrangement a l l holes 32 28 30 _a — c I Re ihe •t-t-f0,1 32 s o ld e r contacts p o sitio n 01 ± 0,1 00,05 + 32 E i nl o t K o n t a k t e 2 — Pos i t ion on alle Locher


    OCR Scan     		PDF B6455 D-32339

    Untitled

    Abstract: No abstract text available
    Text: M an A M P company High Performance Amplifiers, 29 dB Gain 5 - 200 MHz AM-/AMC-140 V2.00 Features • • • FP-9 +47 dBm Typical M idband Third Order Intercept +28 dBm Typical M idband 1 dB Com pression 5.4 dB Typical M idband Noise Figure 1.130 ±0.015


    OCR Scan     		PDF AM-/AMC-140 080x45°

    sp 0937

    Abstract: VK200 inductor of high frequencies Nippon capacitors
    Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors

    731 MOSFET

    Abstract: 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF MRF275L/D MRF275L/D 731 MOSFET 511 MOSFET TRANSISTOR motorola Motorola AN211 VK200 20/4B inductor 0946 HC 039 E 31 motorola AN211 motorola MOSFET 935 MOTOROLA SEMICONDUCTOR 928 B 360 MRF275L

    Untitled

    Abstract: No abstract text available
    Text: PSR, PSK PSL series • • • • • • • • • • • • O utpu t power 50.288 W Extremely wide input voltage range Power MOS-FET technology Large number o f options providing unlimited applications Low input to output differential voltage D irect replacement o f linear regulators


    OCR Scan     		PDF 5A25-7 5A20-7

    SU 179 transistor

    Abstract: SU 179
    Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single


    OCR Scan     		PDF RF275L/D SU 179 transistor SU 179

    Untitled

    Abstract: No abstract text available
    Text: Interface Mating Dim ensions .4375-28, UNEF-2B I I I I jy _ n SEE NOTE 81 Tp n N 0 r .4376-28, UNEF-2A L REFERENCE PLANE JACK PLUS h m .< M lrm » * r.‘ . Lkta r •- i k A r m ^ ’ IS *n W ^440 11.1 • .318 (6.06 .190 (4.63) .064(1.37) .062 (1.32)


    OCR Scan     		PDF 0284mm)