Untitled
Abstract: No abstract text available
Text: STM 81007X 1550 nm Laser in Receptacle Package, Medium Power • • • • Designed for application in fiber-optic networks Laser diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and
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81007X
81007G
Q62702-Pxxxx
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TSAL5100 Vishay
Abstract: TSAL5100
Text: TSAL5100 Vishay Telefunken GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1¾ Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
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TSAL5100
TSAL5100
D-74025
20-May-99
TSAL5100 Vishay
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AMP PBT connector 7 way
Abstract: EN3155 Cross Reference en3155 m39029 BOEING bacc63 D38999 series I II MS27615-KXXBXX MS27295 MS24254-16P aecma en3155 L-2119-E
Text: Amphenol 2010 Amphenol 12-C3 Circular Interconnects Products for Military, Aerospace and Harsh Environments Circular Interconnects • Aluminum • Stainless Steel/Firewall • Composite • Printed Circuit Board Connectors • High Speed Connectors • EMI Filter/Transient
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12-C3
KV/150
12-R1.
LM-300
AMP PBT connector 7 way
EN3155 Cross Reference
en3155 m39029
BOEING bacc63
D38999 series I II
MS27615-KXXBXX
MS27295
MS24254-16P
aecma en3155
L-2119-E
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DTS27
Abstract: No abstract text available
Text: DIODE TRANSFER SWITCHES SERIES DTS 0.025 - 18 GHz GENERAL INFORMATION Series DTS transfer switches allow power entering two input ports, A and B, to exit from output ports C and D respectively, or by appropriate switching, to exit from ports D and C respectively. A functional schematic of a transfer is shown in Fig. 1, and a typical circuit is shown in Fig. 2.
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DTS-12
DTS-18
DTS-27
DTS-29
DTS-33
DTS-45
DTS-48
DTS-58
DTS-75
DTS27
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Untitled
Abstract: No abstract text available
Text: CUSTOM CAPABILITY COMBINER/ISOLATOR DUPLEXER W/DIVIDER MODEL AY-C10 POWER DIVIDER SPECIFICATIONS In-Phase: 2-Way Frequency: 1010-1050 MHz Loss: ≤0.2 dB, above 3 dB split Isolation: 20 dB Minimum Phase Balance: ±3° VSWR: 1.25:1 Power: Peak: 500 W, 1% Duty Cycle
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AY-C10
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SWM-1300
Abstract: pin diode microstrip
Text: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS SP3T DIODE SWITCH REFLECTIVE MODEL SWM-1300 0.5–18.0 GHz GENERAL INFORMATION The Model SWM-1300 SP3T PIN Diode switch operates over the full frequency range 0.5–18.0 Ghz in a single unit. KDI/Triangle has integrated microstrip soft substrate with thick film hybrid drivers, which are
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SWM-1300
SWM-1300
MIL-STD-883.
SWM-1300A
pin diode microstrip
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RT 179
Abstract: RGX-179 5M2397-002 S280W502-1 RGX179 RT179 ST5M1323-001 Axon TWINAX ST5M1212-002 TRX179
Text: Twinax Contacts for Subminiature Cylindricals general description, application data - size 10 &12 Amphenol Twinax Contacts were designed for use with twinax cable in Data Bus systems. Twinax contacts provide the following benefits: • Protection from magnetic interference
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MIL-STD-1553B
JN1104
an256-AA)
L-1255-C)
L-1256-P)
L-1256-M)
L-1256-J)
L-1256-A)
L-1256-AA)
RT 179
RGX-179
5M2397-002
S280W502-1
RGX179
RT179
ST5M1323-001
Axon TWINAX
ST5M1212-002
TRX179
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Untitled
Abstract: No abstract text available
Text: MODULATORS, BI-PHASE SERIES MP 0.2–18 GHz GENERAL INFORMATION Bi-Phase modulators shift the phase of an RF signal y 180° b upon appl -i cation of aTTL logic signal Logic . 0 produces a re erence f 0° phase and logic 1 changes the phase 18 °.0 Bi phase modulators can be used in ca - r
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Cannon connectors
Abstract: No abstract text available
Text: BROADBAND SP6T DIODE SWITCH SERIES TB600 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: 0.02 to 18.0 GHz. RF Impedance: RF Power: 50 OHMS. +20 dBm ope r ational. Consult f actor y for high power options . Switches with d
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TB600
Cannon connectors
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Untitled
Abstract: No abstract text available
Text: BROADBAND SP8T DIODE SWITCH SERIES TB800 HIGH ISOLATION-REFLECTIVE ABSORPTIVE 0.02–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: 0.02 to 18.0 GHz. 50 OHMS. +20 dBm operational. Consult factory for high power options. DC Requirements:
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MDB1-15SSL
TB800
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74ACT540
Abstract: RESISTORS-470 OHMS SWX-01 SWX-02 SWX-03 SWX-04 SWX-05 capacitors smd ghz smd diode marking U1
Text: HIGH ISOLATION–SURFACE MOUNT PIN DIODE SWITCHES MODULES SERIES SWX 0.2–2.4GHz FEATURES • Full Cellular Frequency Coverage: 200–2400 MHz (Ideal for PCS Applications) • Thick Film Hybrid Circuitry Sealed in Rugged Ceramic “Surfpac” Packages • Silicon PIN Diode Design is More Robust and ESD Safe than GaAs
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SWX-05
74ACT540
SWX-02
SWX-03
74ACT540
RESISTORS-470 OHMS
SWX-01
SWX-02
SWX-03
SWX-04
SWX-05
capacitors smd ghz
smd diode marking U1
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SQ0003
Abstract: SQ-0003
Text: PCS SURFACE MOUNT CERAMIC PHASE SHIFTER MODEL SQ0003 1930-1990 GHz GENERAL INFORMATION KDI’s new ceramic surface mount analog-phase shifter provides 0-120 degree phase shift minimum over the 1930-1990 MHz frequency band. The maximum insertion loss and VSWR of the unit is 2.8 dB; the maximum VSWR is 1.7. Phase flatness is specified at ϩ/Ϫ9 degrees maximum, and the insertion loss change verses phase shift is well within
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SQ0003
0-10VDC
SQ0003
SQ-0003
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ATN-4072
Abstract: kdi 64537
Text: BROADBAND SURFACE MOUNT ANALOG–CERAMIC ATTENUATORS, PIN DIODE SERIES ATN-4072 500–2000 MHz DESCRIPTION KDI/t riangle Model A TN-4072 is a surf ace mount atte n uator featur ing a continuous atten uation changev ersus controlv oltage. The h ybr id design
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ATN-4072
TN-4072
12VDC
ATN-4072
kdi 64537
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TSAL5100
Abstract: No abstract text available
Text: TSAL5100 Vishay Semiconductors ¾ GaAs/GaAlAs IR Emitting Diode in ø 5 mm T–1 Package Description TSAL5100 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs
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TSAL5100
TSAL5100
D-74025
20-May-99
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Untitled
Abstract: No abstract text available
Text: 12-WAY DIVIDER, POWER MODEL D311NS 800-2000 MHZ ELECTRICAL SPECIFICATIONS Frequency Range: 800–2000 MHz Insertion Loss: 1.5 dB Isolation: 18 dB VSWR: In: 1.5 • 1 typ. Out: 1.3 • 1 typ. Amplitude Balance: ±0.3 dB Phase Balance: ±6˚ Power: +30 dBm typ. as divider
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12-WAY
D311NS
D311NS
MIL-C-39012
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FERRITE TOROIDAL CORE DATA
Abstract: No abstract text available
Text: CUSTOM DESIGN CAPABILITY FILTERED POWER DIVIDERS PSX SERIES FEATURES • • • • • • Utilizes “Ferriteless” Printed Circuit Lumped Component Design Available in Fixed Frequencies from 5-300 MHz Reactive Filtering Characteristics Provide Out of Band Rejection
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MIL-C-39012
PSX-2X4-15
FERRITE TOROIDAL CORE DATA
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SDAXA
Abstract: gus manual IR3Y38M PG12864LRF-NRA PEAK tray drawing BUK 445 equivalent nK13
Text: SHARP • 81007=18 0 0 3 2 0 6 k bSO B SHARP IR 3 Y 3 8M ♦Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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D03e0Ã
IR3Y38M
QFP48-P-0797
AA1035
CV536
SDAXA
gus manual
IR3Y38M
PG12864LRF-NRA
PEAK tray drawing
BUK 445 equivalent
nK13
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Untitled
Abstract: No abstract text available
Text: SHARP ELEK/ MELEC DIV 1SE D | 81007=10 0003141, 0 | GP1A40 Photointerrupter _ . Connector Terminal Type OPIC Photointerrupter with Lever Type Actuator GP1A40 • T-4 1 -7 3 ■ Features O u tlin e D im ensions
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GP1A40
GP1A40
SMP-03V-BC
SHF-001T-08BS
P1A40
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Untitled
Abstract: No abstract text available
Text: SHARP E L E K / MELEC D IV 7 ' 7 3 ‘ 5 “3 1SE D | 81007^8 O O G aO ta o | High Speed Dual Comparator IR9319/IR9319N IR9319/IR9319N • Description ■ The IR9319/IR9319N is a high speed dual compa rator, which is designed to operate from a wide range of supply voltage as well as a signal 5V supply.
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IR9319/IR9319N
IR9319/IR9319N
14-pin
IR9319)
IR9319N)
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IR3741
Abstract: TA-2517 IR3741N ir*741
Text: SHARP ELEK/ M ELEC D IV 1SE D j| a ia cm a OQOEGIO 3 | IR3741/IR3741N G eneral Purpose Operational Amplifier - r - iH - Q S - io General Purpose Operational Amplifier • Description The IR3741/IR3741N is a general purpose high performance operational amplifier. High common
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IR3741/IR3741N
106dB
IR3741)
IR3741N)
IR3741/IR3741N
T-77-Q5-/0
IR3741
TA-2517
IR3741N
ir*741
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FP 310
Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
Text: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26
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6N135
6N136
6N138
6N139
BPW21
H62702-P3051
Q62702-P3009
Q62702-P3057
Q62702-P3058
Q62702-P3054
FP 310
Q62902-B155-F222
Siemens LS 3369-fh
irl 3034
SCF 5784
KTY 11-5
KTY 20-5
KTY 14-6
Q68000-A7820
LG 57A
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51004G
Abstract: laserdioden
Text: Semiconductor Devices for Fiber* Optic Systems and High-Power Lasers Bauelemente für die LWL-Technik und Leistungslaser Emitter für Glasfaseranwendungen Emitters for glass fiber applications InGaAsP/lnP-IRED für das 2. Durchlaßfenster 1300 nm rop= -4 0 C . +85 0 , Bauteile nach Bellcore Spezifikation qualifiziert.
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81005G
1005A
81007G
81007G
51004G
laserdioden
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GEM X 365
Abstract: diode ed 85
Text: 81007G/N SIEMENS LOW POWER 1500 lim Laser in Receptacle Package Dimensions in inches mm 81007G (13-2) .739 (18.8) i_ spacing .1 (2.54) .283 (7.2) 267 (6.8) 53 A (13.6) .519(13.2) 0) .098 (2.5) .083(2.1) Mi 365 (9.3) 350 (8.9) IS 0) '+ k .613(15.6)
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STL81007G/N
STL81007G
STL81007N
STL/81007G/N
8B-24
GEM X 365
diode ed 85
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whdi
Abstract: LR3740 BF 0270 L202H 36 TI BBL
Text: SHARP ELEK/ M ELEC 1 SE o I D IV a ia o T T a Synchronous Signal G enerator for 2 /3 " C C D a a o ib M a a | LR 3740/L R 3740N T-41-55 LR3740/LR3740N • Pin Connections Description The LR3740/LR3740N is a CMOS synchronous signal generator LSI which generates TV synchro
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LR3740/LR3740N
t-41-55
LR3740
44-pin
LR3740N
24-pin
whdi
BF 0270
L202H
36 TI BBL
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