9813
Abstract: 813 infrared ITR9813 ITR-9813
Text: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DRX-813-084 REV:1.0 Ecn: Page:1of5 MODEL NO: ITR-9813 PACKAGE DIMENSIONS : UNIT: mm ABOVE SPECIFICATION MAY BE CHANGED WITHOUT NOTICE. SUPPLIER‘S WILL RESERVE AUTHORITY ON MATERIAL CHANGE FOR ABOVE SPECIFICATION.
|
Original
|
PDF
|
DRX-813-084
ITR-9813
22Lines)
ITR9813
150pcs/Every
160pcs
1600pcs
9813
813 infrared
ITR-9813
|
ITR9813
Abstract: 9813 ITR-9813
Text: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DRX-813-084 MODEL NO: ITR-9813 • Ecn: REV:1.0 Page:1of5 PACKAGE DIMENSIONS : UNIT: mm ABOVE SPECIFICATION MAY BE CHANGED WITHOUT NOTICE. SUPPLIER‘S WILL RESERVE AUTHORITY ON MATERIAL CHANGE FOR ABOVE SPECIFICATION.
|
Original
|
PDF
|
DRX-813-084
ITR-9813
22Lines)
ITR9813
150pcs/Every
160pcs
1600pcs
9813
ITR-9813
|
Untitled
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DRX-813-084 REV: Ecn: Page:1of8 MODEL NO: ITR9813 • 2 Package Dimensions : UNIT:mm DESIGNER CHECKER APPROVED Office: NO 25,Lane 76,Chung Yang Rd,Sec.3 Tucheng, Taipei 236,Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 22Lines
|
Original
|
PDF
|
ITR9813
DRX-813-084
22Lines)
150Pcs/1Bag4Bags/1Box
|
ITR9813
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO., LTD. Device Number: DRX-813-084 REV: 1.0 Ecn: Page:1of8 MODEL NO: ITR9813 • Package Dimensions : UNIT:mm Office: NO 25,Lane.76, Sec.3, Chung Yang Rd., Tucheng 236, Taipei, Taiwan, R.O.C. TEL: 886-2-2267-2000,2267-9936 FAX: 886-2-2267-6244,2267-6189,22676306
|
Original
|
PDF
|
DRX-813-084
ITR9813
150Pcs/1Bag4Bags/1Box
10Boxes/1Carton
ITR9813
|
zener diode 46a
Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
Text: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts
|
Original
|
PDF
|
E43149
LR26550
zener diode 46a
DSBT2-S-DC12V
DSBT2-S-DC24V
DS2E-M-DC24V
DSBT2-M-2D-DC12V
DSBT2-M-2D-DC24V
LR26550
solid state 220 volt stabilizer circuit
dsbt2-s-dc5v
AC DC DIGITAL ammeter diagram
|
Untitled
Abstract: No abstract text available
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at S808500G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: InGaAs, active MQW Lasing wavelength: 808 nm typ., multimode
|
Original
|
PDF
|
S808500G
|
808 nm 100 mw
Abstract: RLT80850G
Text: ROITHNER LASERTECHNIK A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT80850G TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure
|
Original
|
PDF
|
RLT80850G
808 nm 100 mw
RLT80850G
|
DL-8031-031B
Abstract: No abstract text available
Text: INFRARED LASER DIODE DL-8031-031B Features Ver.1 Mar. 2003 Package Tolerance : ± 0.2 Unit : mm ø9.0- 0.03 ø5.35 ø4.75± 0.15 • Lasing wavelength : 808 nm (Typ.) • Single longitudinal mode • High output power : 150 mW at 50°C • Low threshold current : Ith = 50 mA (Typ.)
|
Original
|
PDF
|
DL-8031-031B
150mW
DL-8031-031B
|
Laser module
Abstract: infrared Laser diode Laser Diode 4 pin 808nm-5mW 10 pin laser diode laser diode symbols IR-Laser-Diode 808nm Laser-Diode 808 NM808-5 laser diode 12 pin
Text: US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1 US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Links to Laser Diode & Laser Module Configurations and Specifications >>>>>>>>>> Laser Diode
|
Original
|
PDF
|
808nm-5mW
N808-5
NM808-5
MM808-5
MM808nm
com/mmd808nm5m
Laser module
infrared Laser diode
Laser Diode 4 pin
10 pin laser diode
laser diode symbols
IR-Laser-Diode 808nm
Laser-Diode 808
NM808-5
laser diode 12 pin
|
RLT808-150GS
Abstract: No abstract text available
Text: RLT808-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 808 nm Optical Output Power: 150 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1
|
Original
|
PDF
|
RLT808-150GS
RLT808-150GS
|
RLCO-808-500G
Abstract: No abstract text available
Text: RLCO-808-500G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 500 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN
|
Original
|
PDF
|
RLCO-808-500G
RLCO-808-500G
|
RLCO-808-1000G
Abstract: No abstract text available
Text: RLCO-808-1000G TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Ouput Power: 1 W Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN 1 2
|
Original
|
PDF
|
RLCO-808-1000G
RLCO-808-1000G
|
c 10 ph diode
Abstract: C 15 PH diode f 9222 l GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
|
Original
|
PDF
|
GL710
CHARACTERISTICS4-7710
SMT98136
c 10 ph diode
C 15 PH diode
f 9222 l
|
c 10 ph diode
Abstract: GL710
Text: PRODUCT INFORMATION APPLICATIONS: OA equipment Audio visual equipment Home appliances Telecommunication equipment terminal Measuring equipment Tooling machines Computers GL710 Infrared Emitting Diode IrDA Components Group ABSOLUTE MAXIMUM RATINGS PARAMETER
|
Original
|
PDF
|
GL710
SMT98136
c 10 ph diode
|
|
|
Untitled
Abstract: No abstract text available
Text: ADL-80Y04TZ Infrared Laser Diode 6-2D-LD80-001_Rev.00 808nm 200mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser
|
Original
|
PDF
|
ADL-80Y04TZ
6-2D-LD80-001
808nm
200mW
divers-vis/ari/808nm/
adl-80y04tz
|
ADL-80Y04TL
Abstract: 4050C
Text: ADL-80Y04TL Infrared Laser Diode 6-2D-LD80-009_Rev.01 808nm 200mW High Power Operation • Features 1. Low threshold current 2. Low operation current 3. High pumping efficiency 4. Stable wavelength 5. High reliability • Applications 1. Pumping source for DPSS green laser
|
Original
|
PDF
|
ADL-80Y04TL
6-2D-LD80-009
808nm
200mW
divers-vis/ari/808nm/
adl-80y04tl
4050C
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED TOP IR LED SMT808N-23 Lead Pb Free Product – RoHS Compliant SMT808N-23 High Performance Infrared TOP LED with Lens SMT808N-23consists of an AlGaAs LED mounted on the lead frame as TOP LED package with plastic ball lens and is 44mW typical of output power and 80mW/sr of radiant Intensity.
|
Original
|
PDF
|
SMT808N-23
SMT808N-23consists
80mW/sr
808nm.
400um
400nm
808nm
72-hour-
|
Basler a601f
Abstract: vision camera basler labview basler A601 779985-01 Basler scA640-70fc 196284-04 conveyor belt drive sca160 FPGA LABVIEW
Text: Real-Time Embedded Vision System NI EVS-1464RT ◾◾ Rugged, fanless, machine vision system ◾◾ Intel Core 2 Duo processor 1.66 GHz ◾◾ 1 GB solid-state drive and external flash ◾◾ 1 GB DDR2 memory ◾◾ Small footprint Connectivity Options ◾◾ GigE Vision and IEEE 1394 IIDC
|
Original
|
PDF
|
EVS-1464RT
RS232
Basler a601f
vision camera basler labview
basler A601
779985-01
Basler
scA640-70fc
196284-04
conveyor belt drive
sca160
FPGA LABVIEW
|
ISL59532
Abstract: MAKING LD ISL98001 ISL98001-140 ISL98001-170 ISL98001-210 ISL98001-240 ISL98001-275 ISL60002B12 232RX
Text: 1 Intersil New Products 1 2006 P RODUCT S ELECTION GUIDE Intersil New Products World’s Fastest Triple Video ADC with Unmatched Color Accuracy Intersil’s ISL98001 offers sharp, clear images for HDTV, DVD, VCR, set-top box and PC monitor applications.
|
Original
|
PDF
|
ISL98001
400mA
ISL9011
300mA
ISL9012
ISL9014
1-888-INTERSIL
ISL59532
MAKING LD
ISL98001-140
ISL98001-170
ISL98001-210
ISL98001-240
ISL98001-275
ISL60002B12
232RX
|
BUSS SR-5 T3.15A 250V
Abstract: Buss SR-5 T2A 250v OC-106 94V0 C T2A 250v BUSS SS-5 OC106 BUSS SR-5 T1.25A 250V T4A 250V buss ss-5 oc103 94vo c T2A 250v BUSS T2A 250v SS-5
Text: CIRCUIT PROTECTION Circuit Protection G r o u The Cooper Bussmann Electronic Fuse family offers fail-safe circuit protection devices in SMD, Thru-Hole, and traditional Ferrule Fuse p RoHS 2002/95/EC packages. CHIP Fuses 0603FA & 3216FF Series Cooper Bussmann's patented Solid Matrix CHIP™ fuses
|
Original
|
PDF
|
2002/95/EC
0603FA
3216FF
OC-129
BUSS SR-5 T3.15A 250V
Buss SR-5 T2A 250v
OC-106 94V0 C
T2A 250v BUSS SS-5
OC106
BUSS SR-5 T1.25A 250V
T4A 250V buss ss-5
oc103 94vo c
T2A 250v BUSS
T2A 250v SS-5
|
Dale CPF
Abstract: No abstract text available
Text: COMMERCIAL METAL FILM DALE TYPE CPF Power, Flameproof FEATURES • High power rating, small size • Special filming and coating processes • Low noise • Flameproof, high temperature coating • Excellent high frequency characteristics • Low voltage coefficient
|
OCR Scan
|
PDF
|
CPF-75
RS-296-D
Dale CPF
|
InfraRed Associates
Abstract: InfraRed Associates hct-100 HgCdTe Infrared Preamplifiers metal detectors circuits HCT-100 X1010 missile HCT-40 HCT-55
Text: SPECIFICATIONS FOR STANDARD DETECT! InfraRecJ ASSOCIATES, Inc 70 > 50 1000 Route #130, Cranbury, NJ 08512 609 395-7600 Telex 642282 H H o ni MODEL SIZE (inches) Photoconductive HgCdTe detectors fabricated by Infrared Associates, Inc. and optimized for operation in the 8-13 micron
|
OCR Scan
|
PDF
|
HCT-90
HCT-80
HCT-70
HCT-60
HCT-55
HCT-50
HCT-40
x1010
15MHz
InfraRed Associates
InfraRed Associates hct-100
HgCdTe
Infrared Preamplifiers
metal detectors circuits
HCT-100
missile
HCT-40
HCT-55
|
MOC70W2
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M O C70W 1 * M O C70W 2 Slotted Optical Sw itch es Transistor Output * M o t o ro la Preferred D evice These devices consist o f tw o g alliu m arsenide infrared e m itting diodes facing tw o NPN silicon phototransistors across a 0.100" w ide slot in the housing. S w itching takes place when
|
OCR Scan
|
PDF
|
M0070W2
MOC70W2
|
BPW32
Abstract: Siemens photodiode visible light bpw 32 3cj6 bpw photodiode S1027
Text: SIEMENS BPW 32 SILICON PHOTODIODE VERY LOW DARK CURRENT Package Dimensions in Inches mm Chip position Photosensitive area .039 x 039 ( t x 1) FEATURES * Silicon Planar Photodiode * Wide Temperature Range * Usage: Visible and Near Infrared Range (350 to 1100 nm)
|
OCR Scan
|
PDF
|
as3b32b
BPW32
Siemens photodiode visible light
bpw 32
3cj6
bpw photodiode
S1027
|
