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    827 D TRANSISTOR Search Results

    827 D TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    827 D TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smoke detector schematic diagrams

    Abstract: schematic diagram for ac power line voltage conditioner Solar Charge Controller diagram 1.25mm Pitch smd dip switch ultrasonic range meter IC Transistors Diodes smd e2 datasheet relay 346 766 OPTOCOUPLER 4-PIN application note schematic diagram 12v solar charge controller schematic diagram dc to ac converter
    Text: AQZ404 POWER PhotoMOS RELAYS 1-channel Form B Type UL File No.: E43149 CSA File No.: LR26550 3.5±0.2 .138±.008 21±0.2 .827±.008 12.5±0.2 .492±.008 PhotoMOS RELAYS FEATURES 3. Compact slim-type 4-pin SIL (W)3.5 x (D)21.0 × (H)12.5mm (W).138 × (D).827 × (H).492 inch


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    PDF AQZ404 E43149 LR26550 AQZ105 AQZ205 AQZ107 AQZ207 AQZ104 AQZ204 AQZ202V smoke detector schematic diagrams schematic diagram for ac power line voltage conditioner Solar Charge Controller diagram 1.25mm Pitch smd dip switch ultrasonic range meter IC Transistors Diodes smd e2 datasheet relay 346 766 OPTOCOUPLER 4-PIN application note schematic diagram 12v solar charge controller schematic diagram dc to ac converter

    Untitled

    Abstract: No abstract text available
    Text: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008806-1202 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition


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    PDF Z86L825/826/827 20-Pin PS008806-1202

    86L82

    Abstract: L016 Z86L825 Z86L826 Z86L827
    Text: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008808-1203 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition


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    PDF Z86L825/826/827 20-Pin PS008808-1203 86L82 L016 Z86L825 Z86L826 Z86L827

    zilog microcontroller

    Abstract: No abstract text available
    Text: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008804-0502 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition


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    PDF Z86L825/826/827 20-Pin PS008804-0502 zilog microcontroller

    Untitled

    Abstract: No abstract text available
    Text: Z86L825/826/827 20-Pin Low-Voltage IR Microcontrollers Preliminary Product Specification PS008803-0402 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126-3432 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether a later edition


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    PDF Z86L825/826/827 20-Pin PS008803-0402

    EP5S

    Abstract: No abstract text available
    Text: User's Manual User's Manual: Hardware M16C/6C Group 16 User’s Manual: Hardware RENESAS MCU M16C Family / M16C/60 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by Renesas Electronics


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    PDF M16C/6C M16C/60 R01UH0138EJ0210 EP5S

    SPD09N05

    Abstract: P-TO252 SPU09N05 spd09n
    Text: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .


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    PDF SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n

    to3pfm

    Abstract: NTE2636 VCes 1500V
    Text: NTE2636 Silicon NPN Transistor Horizontal Deflection w/Internal Damper Diode Features: D High Breakdown Voltage: VCES = 1500V D Built–In Damper Diode D Isolated TO3PFM Type Package Applications: D TV/Character Display Horizontal Deflection Output Absolute Maximum Ratings: TA = +25°C unless otherwise specified


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    PDF NTE2636 500mA, to3pfm NTE2636 VCes 1500V

    ic 748

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD1148 Features • • NPN Silicon Power Transistors With TO-3P I D package Power amplifier applications Maximum Ratings Symbol V CEO V CBO


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    PDF 2SD1148 50mAdc, 140Vdc ic 748

    male spade terminal insulated

    Abstract: 76-FD22-187 DE C 748 5 voltage regulator Wired / Wireless Smoke Detector ST22 equivalent digital capacitance meter 10 WATT LED Nte 157 fan 6224
    Text: Whatever your needs, NTE has the answer! ECG Aerosol Chemicals • Butane Fuel • Smoke Detector Tester Spray • Antistatic Circuit Refrigerants • Electronics Degreasers and Washes • Electronics Contact Cleaners, Degreasers and Washes • Electronics Contact Cleaners


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    PDF 76-MCT1 240mm) male spade terminal insulated 76-FD22-187 DE C 748 5 voltage regulator Wired / Wireless Smoke Detector ST22 equivalent digital capacitance meter 10 WATT LED Nte 157 fan 6224

    ic 748

    Abstract: 2SC3907
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SC3907 Features • • • NPN Silicon Power Transistors With TO-3P I package Complementary to 2SA1516 Power amplifier applications Maximum Ratings


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    PDF 2SC3907 2SA1516 ic 748 2SC3907

    ic 748

    Abstract: 2sa1516
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1516 Features • • PNP Silicon Power Transistors With TO-3P I package Power amplifier applications Maximum Ratings Symbol V CEO V CBO


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    PDF 2SA1516 ic 748 2sa1516

    2sa1265

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SA1265 Features • • • PNP Silicon Power Transistors With TO-3P I package Power switching applications Complementary to 2SC3182 Maximum Ratings


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    PDF 2SA1265 2SC3182 50mAdc, 2sa1265

    2sd845

    Abstract: No abstract text available
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2SD845 Features • • With TO-3P I package Recommended for 60~80W high-fidelity frequency amplifier output stage NPN Silicon Power Transistors


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    PDF 2SD845 2sd845

    10A 600 VOLT DIODE

    Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
    Text: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes


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    PDF 72T4b21 T-33-35 KE724S0110 T-33- KE72450110 10A 600 VOLT DIODE transistor 13a 600v westinghouse DIODES 827 d transistor KE72

    KS621K3010

    Abstract: powerex ks62 14B21
    Text: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3


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    PDF KS62453010 Fee010 KS62453010 KS621K3010 KS621K3010 powerex ks62 14B21

    westinghouse DIODES

    Abstract: KE7245A1 transistor al fm Westinghouse diode westinghouse ac motor KE72 N111F KE7245
    Text: 7 2 9 4 6 2 1 POWEREX INC faB D E l T S ' i m a S ! OODO^M □ D'^ T-33-35 N' /r - Dim A B C D E F G H J K L M N P Q R S T U Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.38 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 Millimeters 105 Max


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    PDF T-33-35 KE7245A110 westinghouse DIODES KE7245A1 transistor al fm Westinghouse diode westinghouse ac motor KE72 N111F KE7245

    bd 825 10

    Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
    Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,


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    PDF Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113

    SF 829 B

    Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
    Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)


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    PDF SF827 SF829 SF82B SF82S SF 829 B SF819 sf 829 d SF126 SF826 sf829c SF816 SF 827 d

    2N4119

    Abstract: 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823
    Text: T O 18 CB 6 N channel field effect transistors (metal case) Tamb - 25°C Transistors à e ffe t de champ, canal N (boîtier m étallique ) Case Type V (BR)GSS (V) B oîtie r min •g s s InA) / (pA )* I dss <mA) 21 s <mS) max m in max y m in max v GSoff


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    PDF c11ss 2N4119 4392 transistor ESM 30 2N4117 2N4118A 2N 4092 2N 4221 2N 4391 2N 4416 2N3823

    A2 zener diode

    Abstract: diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232
    Text: DISCRETE SEMICONDUCTORS I N D E X A N D C R O S S REFERENCE Industry Number Type Allegro Number s Allegro Package TO-236AB TO-236AB TO-236AB 1N914 Diode TMPD914 1N4148 1N5230 1N5231 1N5232 Diode Zener Zener Zener TMPD4148 TMPZ5230 TMPZ5231 TMPZ5232 1N5234


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    PDF 1N914 1N4148 1N5230 1N5231 1N5232 1N5234 1N5236 1N5237 1N5239 1N5240 A2 zener diode diode ZENER A1 to-226aa to226aa ZENER DIODE 1n5240 DIODE 827 ZENER 1N5242 1N414* zener 2n2222 transistor pin b c e ZENER 1n5232

    1Ft TRANSISTOR

    Abstract: dual transistor 1ft kd7212
    Text: 729462 1 POWEREX INC T K W B iE Tfl d Ë J 75T4b51 00022b5 1 J ” D 'T z- 3 3 - 3 $ ‘ KD7212A2 X Powerex, Inc., Hillls Street, Yotingwood, Pennsylvania 15697 412 925-7272 D U S l D a r H /lC ftO /l Transistor Module 25 Amperes/1200 Volts D escription


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    PDF 75T4b51 00022b5 KD7212A2 Amperes/1200 KD7212A2 1Ft TRANSISTOR dual transistor 1ft kd7212

    2SD1720

    Abstract: No abstract text available
    Text: h7 > y 7. $ / J ransistors 2SD1720 2SD1720 Triple Diffused Planar NPN Silicon Transistor S ü J 5 ^ J iil1iffl/Low Freq. Power Amp. • £ | f f i ^ t > £ 0 / D'mensions U nit : mm) 1) VCE(sat) fi^ 'o VcE(sat)=0.3V(Typ.) (Ic / I b =3A /0.3A ) 2) h F E f D Ï J f t ^ t É ^ 'â l'o


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    PDF 2SD1720 2SD1720

    TRANSISTOR JC

    Abstract: TRANSISTOR MODULE DUAL DARLINGTON 200 Ampere power transistor KD7212A2 kd7212 isa1200
    Text: 7 2 9 4 6 2 1 POWEREX INC ïfl D e J 7E1Mti2Ì 00022b5 <W E H E X 1 D 'T z- 3 3 - 3 S ' KD7212A2 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 D U S l D d r lin C f t O f l Transistor Module 25 Amperes/1200 Volts Description Powerex Dual Darlington Transistor


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    PDF 72T4fci2Ã 00022b5 KD7212A2 Amperes/1200 KD7212A2 TRANSISTOR JC TRANSISTOR MODULE DUAL DARLINGTON 200 Ampere power transistor kd7212 isa1200