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    82HS181 Search Results

    82HS181 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    82HS181 Intel 8K-Bit TTL Bipolar PROM (1024 x 8) Original PDF
    82HS181 Intel 1K x 8 TTL PROM Memory Scan PDF
    82HS181 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    82HS181A Signetics Bipolar Memory IC Data Book 1982 Scan PDF

    82HS181 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    82HS181

    Abstract: N82HS181 N82HS181A S82HS181 1024x8 PROM signetics PROM
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES T h e 82HS181 is f ie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a t te r n s a re im ­ • Address access lime: 82HS181: 55ns max


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 /82HS181A N82HS181 N82HS181A S82HS181 1024x8 PROM signetics PROM

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


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    PDF 8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137

    1k x 8 bipolar

    Abstract: 82S181 82HS181 AFN-02064A
    Text: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR PROM 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 Low Power Dissipation: 0.08 mW/Bit Typically Four Chip Select Inputs for Easy Memory Expansion • Three-State Outputs ■ Hermetic 24-Pin DIP


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    PDF 82S181/82HS181 82S181 82HS181 24-Pin and82HS181 U92-bitj 82HS181 1k x 8 bipolar AFN-02064A

    82S181

    Abstract: No abstract text available
    Text: inteT 82S181/82HS181 8K 1K x 8 BIPOLAR PROM 82S181 70 ns Max. 82HS181 50 ns Max. Fast Access Time: 50 ns for 82HS181 • Three-State Outputs Low Power Dissipation: 0.08 mW/Bit Typically ■ Hermetic 24-Pin DIP ■ Polycrystalline Silicon Fuses for Higher Fuse Reliability/Higher


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    PDF 82S181/82HS181 82S181 82HS181 24-Pin 192-bit 82S181 82HS181

    P80A49H

    Abstract: 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel
    Text: COMPONENT DATA CATALOG JANUARY 1982 Intel C orporation makes no w arranty fo r the use of its products and assumes no re sponsib ility fo r any e rrors w hich may appear in th is docum ent nor does it make a com m itm ent to update the info rm atio n contained herein.


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    PDF RMX/80, P80A49H 8035HL F1L 250 V fuse BPK-70 interfacing 8275 crt controller with 8086 i8282 hall marking code A04 Transistor AF 138 DK55 82720 intel

    27S43

    Abstract: No abstract text available
    Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs


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    PDF

    MMI 6381

    Abstract: 53C881 53C881A 63C881 63C881A 63LS880 63LS881 63PS881 82HS181 RAYTHEON ROM
    Text: - 31 - 6 3 8 0 m « tt & im*m OC X -i y * y me max ns) TCAC max (ns) TOH max (ns) It TOE m ax (ns) TOD max: (ns.) m (Ta=25*C) V D D or V C C (V) A I DD typ OaA) I DD max OuA) I IL/VIIL raax (mA/V) -h/m%« VIL max (V) ai Œ I IH/VIIH max (mA/V) VIH min (V)


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    PDF 53C881 53C881A 63C881 63C881A Al27S180A Am27S181A CY7C282-30 024X8) 24PIN MMI 6381 53C881 63LS880 63LS881 63PS881 82HS181 RAYTHEON ROM