Contextual Info: Signetics 82S212/82S212-40 2304-Bit TTL Bipolar RAM 256 x 9 Product Specification Military Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The organization of the 82S212-40 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit

N82S212

Abstract: 82S212 N82S212F S82S212 S82S212F
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The organization of the 82S212 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit can be used as a tag fo r each word stored. The 82S212 is ideal fo r scratch-pad, push­

82S212

Abstract: N82S212 N82S212F S82S212 S82S212F
Contextual Info: M AY 1982 BIPOLAR M EM O R Y DIVISION 82S212 T.S. 2304-BIT BIPOLAR RAM (2 5 6 x 9 ) DESCRIPTION T h e o rg a n iz a tio n o f th e 82S 212 a llo w s b y te w id e s to ra g e o f d a ta , in c lu d in g p a rity . W h e re p a rity is n o t re q u ire d , th e n in th b it

82S212

Abstract: N82S212 N82S212F S82S212 S82S212F
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 2304-BIT BIPOLAR RAM 256 X 9 DESCRIPTION The o rg a n iza tio n o f th e 82S212 a llo w s b yte w id e sto ra g e o f data, in c lu d in g parity. W here p a rity is n ot required, th e n in th b it can be used as a tag fo r each w ord sto re d .

N82S

Contextual Info: M AY 1982 BIPOLAR M E M O R Y DIVISION 2304-BIT BIPOLAR RAM 256 x 9 DESCRIPTION T h e o rg a n iz a tio n of th e 82S 212 a llo w s b y te w id e s to ra g e o f d a ta , in c lu d in g p a rity . W h e re p a r ity is n o t re q u ire d , th e n in th b it

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

82s62

Abstract: 82S52 82S16 0B27 82S00 82S16 lansdale
Contextual Info: MAXIMUM RATINGS Rating Signetics Integrated Circuits 82S00 Series 82LS00 Series The 82S00 and 82LS00 Se­ ries product lines consist of Schottky TTL products and Bi­ polar Memory products. Value Unit Supply Voltage - Vcc 7.0 V Input Voltage - Vin 5.5 V Output Voltage - VQut

bipolar PROM

Abstract: plhs18p8 S4LS04 82HS641 PLHS18 54175 82s137a 82S191 68172 54F04
Contextual Info: Signetics I Alphanumeric I Index Military Products H LM119 LM124 LM139 Vol. 1 17 Dual Voltage Comparator Vol.2 22 26 26 Low Power Quad Op Amp LM139A Qual Voltage Comparator Qual Voltage Comparator PLC18V8Z Zero Standby Power Universal PAL -Type Device PLC415

82S83

Abstract: bcd adder 82s83
Contextual Info: ?• SIGNETICS INTEGRATED CIRCUITS 82S00 Series 82LS00 Series The 82S00 and 8LS00 Se­ ries product lines consist of Schottky TTL products and Bi­ polar Memory products. MAXIMUM RATINGS Rating Value Unit Supply Voltage - Vcc 7.0 V Input Voltage - V.n 5.5

93479ADMQB

Abstract: 93479DMQB 5962-E547
Contextual Info: i REVISIO NS DATE D E S C R IP T IO N LTR APPROVED REV PAGE REV STATUS OF PAQES REV PAQES O tfW H Electronics Supply Center Dayton, Ohio 1 2 3 4 PREPARED 5 6 7 8 9 10 BY M ILITA R Y D R A W IN G -&Ul e. CHECKED BY This drawing is available for use by all Departments and Agencies of the

N82S212N

Abstract: n82s212an N82S212 D3802
Contextual Info: Philips Components-Signetics Document No. 8 5 3 -0 1 3 6 ECN No. 86487 Date of Issue N ove m b e r 11, 1986 Status P ro du ct S pecification 8 2 S 2 1 2 8 2 S 2 1 2 A 2304-bit TTL bipolar RAM M em ory Products DESCRIPTION APPLICATIONS The o rga n izatio n of th e 8 2S 212 and

AM2147-45

Abstract: Stanford Telecommunications STI-5268 "7 Bit Shift Register" am2147 data low bit rate psk modulator 82S212 A128 STEL-5268 AM2147
Contextual Info: FEATURES CONSTRAINT LENGTH 7 RATE 1/3 AND Va THREE BIT SOFT-DECISION IN SIGNED M AGNITUDE OR 2’S COM PLEM ENT FORMAT UP TO 9600 BITS/SEC DATA RATE CODING GAIN OF 5.2 dB AT 1 0 * BER, RATE V2 CODING GAIN OF 6.0 dB (AT 1 0 * BER, RATE Vi) BOTH ENCODING AND DECODING

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

93479DMQB

Contextual Info: R E V IS I ON S DATE DESCRIPTION LTR APPROVED REV PAQE REV 3 4 5 7 8 6 9 10 f t > > « This drawing is available for use by all Departments and Agencies of the Department of Defense h- * It! 6. TITLE: Original date of drawing: 09 November 1987 SIZE A AMSC N/A