BZX 150

Abstract: BZX 9V1 BZX 2.7 v 13 BZX 16 BZX BZX 110 bzx 50 BZX62 BZX 120 bzx 62
Contextual Info: Types V z t /I z t m min r Z T / 'Z T * lZ T m A <ft) (V) max rZ K ' (n ) 'Z K {m A) max max VR (V) 'R/VR (m A ) “ vz ( % / °c> IZ M (mA) max typ Tam b2 5°C B Z X 83-C 9V1 8,5 9,6 10 5 50 0,06 1 5 43 B Z X 83-C 10 9,4 10,6 15 5 70 0,07 1 6 40 B Z X 83-C 11

EQFP100-P-1420-0

Contextual Info: TOSHIBA TC55VL836FF-75,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 262,144-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL836FF is a synchronous static random access memory SRAM organized as 262,144 words

EQFP100-P-1420-0

Contextual Info: TOSHIBA TC 55VL818FF-75,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL818FF is a synchronous static random access memory SRAM organized as 524,288 words

Contextual Info: TOSHIBA TENTATIVE TC55V4196FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 18-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4196FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM

Contextual Info: TOSHIBA TC55VL818FFI-75#-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL818FFI is a synchronous static random access memory SRAM organized as 524,288 words by 18

Contextual Info: TOSHIBA TC55VL1636FF-75,-83,-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VL1636FF is a synchronous static random access memorv SRAM organized as 524,288 words

Contextual Info: TOSHIBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,C 72-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM)

marking 1d4

Contextual Info: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage*1* at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2

PKL4118APIT

Contextual Info: PKL 4118A PIT Advanced Specification 100A DC/DC Power Module 48V Input, 1.8V Output • High Efficiency, 83% Typ. at 100A full load • Fast Dynamic Response, 100 µs, ±350 mVpeak Typ. • Optional heatsink for extended thermal range operation • Monotonic Start-up

BERG 65863

Abstract: A835M
Contextual Info: r All rights strictly reserved. Reproduction or issue to third parties in any form whatever is not permitted without written authority from the proprietor. Property of B E R G ELECTRONICS Copyright BERG ELECTRONICS INC. <0 Í5 —m <o 01 O c: 83 m 70 / »

Contextual Info: PKF 4111A I DC/DC power modules 5 V/ 2 A /10W • SMD and through-hole versions with ultra low component height 8.0 mm 0.315 in. • 83% efficiency • 1,500 Vdc isolation voltage • Switching frequency syncronization • MTTF >10 million hours at +50°C

Contextual Info: ADVANCE SDRAM^SODIMM TECHNOLOGY, INC. SMALL-OUTLINE SDRAM MODULE MT8LSDT264H FEATURES PIN ASSIGNMENT Front View • JED EC-standard 144-pin, sm all-outline, dual in-line m em ory m odule (SODIMM) • Utilizes 83 and 100 M Hz SDRAM com ponents • N onbuffered

Contextual Info: TOSHIBA TENTATIVE TC55V4336FF-100,-83 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 131,072-WORD BY 32-BIT SYNCH RO N O US FLOW THROUGH STATIC RA M DESCRIPTION The TC55V4336FF is a 4,194,304-bit synchronous Flow through static random access memory SRAM

Contextual Info: CY7C168 CY7C169 r CYPRESS SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — t*A = 25 ns — *a c e = 15 ns (7C169) Low active power — 385 mW Low standby power (7C168) — 83 mW

EER-4942

Abstract: EER4942 FSCQ1565RP 6D-22 N15V 35V 1A Transformer specification 2200uf/35V diode zd201 47k 1kv C102
Contextual Info: www.fairchildsemi.com AB-63 Color-TV Applications FSCQ1565RP − 198 Watts Application Output Power Input Voltage Output Voltage Max Current 8.5V (1A) C-TV 198W Universal Input 15V (1A) (90-270Vac) 140V (0.9A) 24V (2A) Features • • • • • • High Efficiency (>83% at 90Vac Input)

4SCE

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected 7C168A CMOS for optimum speed/power High speed — ìaa = 15 ns — »ACE = 10 ns (7CI69A) Low active power — 385 mW Low standby power (7C168) — 83 mW TTL-compatible inputs and outputs

Contextual Info: PKH 2000 I 6 – 6.6 W DC/DC Power Modules 24 V Input Series • Standard industry foot-print and pin-out • 83% efficiency typ at 5V • Output current up to 2 A • Complies with fully and semi aqueous cleaning processes • 1,500Vdc isolation voltage

Contextual Info: SYNCHRONOUS ZBLSRAM FLOW-THRU OUTPUT AVAILABLE AS MILITARY SPECIFICATIONS FEATURES • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 100, 83, 67 and 50 MHz • Fast access time: 9, 10, 11, 15 ns • Internally synchronized registered outputs eliminate the

jc dd

Abstract: DC HK
Contextual Info: AR R^kb^l G^g^kZe Onkihl^.ymJ/ FEASTQER 63 Khp bfi^]Zg\^ \aZkZ\m^kblmb\l3 73 CZl^ lbs^l Zk^ lfZee^k maZg \hgo^gmbhgZe `^g^kZe2inkihl^ \ZiZ\bmhkl1 pbma o^kr ab`a i^k_hkfZg\^3 83 CZg lbs^ eZk`^ maZg =ff ]bZf^m^k aZl lZ_^mr o^gm hg kn[[^k [ng3 cQ]h_^ FI@V CBf

th 165 94v-0

Contextual Info: 13 10 DIM. "A' DIM. •B' DIM. ■C .17 4.2 .33 (8.4) .50 (12.6) .66 (16.8) .83 (21.0) .99 (25.2) 1.16 (29.4) 1.32 (33.6) 1.49 (37.8) 1.65 (42.0) 1.82 (46.2) .21 (5.4) .38 (9.6) .54 (13.8) .71 (18.0) .87 (22.2) 1.04 (26.4) 1.20 (30.6) 1.37 (34.8) 1.54 (39.0)

BwD tran

Contextual Info: SYNCHRONOUS ZBLSRAM FLOW-THRU OUTPUT AVAILABLE AS MILITARY SPECIFICATIONS FEATURES • Zero Bus Latency, no dead cycles between write and read cycles • Fast clock speed: 100, 83, 67 and 50 MHz • Fast access time: 9, 10, 11, 15 ns • Internally synchronized registered outputs eliminate the

TN-58-11

Abstract: B887
Contextual Info: PRELIMINARY l ^ i c n D MT58LC128K16C6 128K X 16 SYNCBURST SRAM N 128K x 16 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST COUNTER FEATURES • • • • • • • • • • Timing 12ns clock cycle 83 MHz 13ns clock cycle (75 MHz)

Contextual Info: HM5216326 Series 16M LVTTL interface SGRAM 2-Mword x 32-bit 125 MHz/100 MHz/83 MHz HITACHI ADE-203-678B (Z) Preliminary, Rev. 0.3 Jan. 14, 1998 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM 5216326 provides 2

r2 137

Contextual Info: PKH 2000 I 6 – 6.6 W DC/DC Power Modules 24 V Input Series • Standard industry foot-print and pin-out • 83% efficiency typ at 5V • Output current up to 2 A • Complies with fully and semi aqueous cleaning processes • 1,500Vdc isolation voltage