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    84 FBGA OUTLINE Search Results

    84 FBGA OUTLINE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    84 FBGA OUTLINE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E5116

    Abstract: DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 E5116 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E

    DDR2-667

    Abstract: EDE5116AJBG
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM WTR Wide Temperature Range EDE5116AJBG-LI (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package  84-ball FBGA  Lead-free (RoHS compliant)


    Original     		PDF EDE5116AJBG-LI 84-ball 667Mbps M01E0706 E1172E20 DDR2-667 EDE5116AJBG

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E40

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Specifications Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA (µBGA)  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E50

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E10

    DDR2-533

    Abstract: DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E20 DDR2-533 DDR2-667 EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E DDR2-400

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 2G bits DDR2 SDRAM EDE2116AEBG 128M words x 16 bits Specifications Features • Density: 2G bits • Organization  16M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE2116AEBG 84-ball 800Mbps M01E1007 E1820E21

    EDE1116ACBG

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1116ACBG-1J 64M words x 16 bits, 1066Mbps Specifications Features • Density: 1G bits • Organization  8M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE1116ACBG-1J 1066Mbps) 84-ball 1066Mbps M01E0706 E1357E10 EDE1116ACBG

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR2 SDRAM EDE2516AEBG-1J 16M words x 16 bits, 1066Mbps Specifications Features • Density: 256M bits • Organization ⎯ 4M words × 16 bits × 4 banks • Package ⎯ 84-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE2516AEBG-1J 1066Mbps) 84-ball 1066Mbps M01E0706 E1330E10

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Description Features The EDE5116AFSE is a 512M bits DDR2 SDRAM organized as 8,388,608 words × 16 bits × 4 banks. It is packaged in 84-ball FBGA (µBGA) package. • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AFSE EDE5116AFSE 84-ball M01E0107 E0705E30

    ede2116aebg

    Abstract: DDR2-800 Humidifier EDE2116AEBG-8E-F ELPIDA DDR2 SDRAM
    Text: DATA SHEET 2G bits DDR2 SDRAM EDE2116AEBG 128M words x 16 bits Specifications Features • Density: 2G bits • Organization  16M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE2116AEBG 84-ball 800Mbps M01E1007 E1820E20 ede2116aebg DDR2-800 Humidifier EDE2116AEBG-8E-F ELPIDA DDR2 SDRAM

    DDR2-400

    Abstract: DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E
    Text: DATA SHEET 512M bits DDR2 SDRAM EDE5116AFSE 32M words x 16 bits Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package: 84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps/400Mbps (max.)


    Original     		PDF EDE5116AFSE 84-ball 667Mbps/533Mbps/400Mbps M01E0107 E0705E51 DDR2-400 DDR2-533 DDR2-667 EDE5116AFSE EDE5116AFSE-4A-E EDE5116AFSE-5C-E EDE5116AFSE-6E-E

    E1369

    Abstract: DDR2-667
    Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1116BEBG 64M words x 16 bits Specifications Features • Density: 1G bits • Organization  8M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V


    Original     		PDF EDE1116BEBG 84-ball 667Mbps M01E0706 E1369E10 E1369 DDR2-667

    DDR2-667

    Abstract: EDE5116AJBG
    Text: PRELIMINARY DATA SHEET 512M bits DDR2 SDRAM WTR Wide Temperature Range EDE5116AJBG-LI (32M words x 16 bits) Features • Density: 512M bits • Organization  8M words × 16 bits × 4 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE5116AJBG-LI 84-ball 667Mbps M01E0706 E1172E20 DDR2-667 EDE5116AJBG

    DDR2-667

    Abstract: EDE1116ACSE-LI
    Text: DATA SHEET 1G bits DDR2 SDRAM WTR Wide Temperature Range EDE1116ACSE-LI (64M words x 16 bits) Features • Density: 1G bits • Organization  8M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE1116ACSE-LI 84-ball 667Mbps M01E0706 E1103E20 DDR2-667 EDE1116ACSE-LI

    EDE1116ACSE-LI

    Abstract: DDR2-667
    Text: DATA SHEET 1G bits DDR2 SDRAM WTR Wide Temperature Range EDE1116ACSE-LI (64M words x 16 bits) Specifications Features • Density: 1G bits • Organization  8M words × 16 bits × 8 banks • Package  84-ball FBGA  Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 1.8V ± 0.1V


    Original     		PDF EDE1116ACSE-LI 84-ball 667Mbps M01E0706 E1103E20 EDE1116ACSE-LI DDR2-667

    20890

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20890-1E PAGE MODE FLASH MEMORY CMOS 32 M 2 M x 16/1 M × 32 BIT MBM29PL3200TE/BE 70/90 • DESCRIPTION The MBM29PL3200TE/BE is 32 M-bit, 3.0 V-only Page mode Flash memory organized as 2 M words of 16 bits each or 1 M words of 32 bits each. The device is offered in 90-pin SSOP and 84-ball FBGA packages. This device


    Original     		PDF DS05-20890-1E MBM29PL3200TE/BE 90-pin 84-ball MBM29PL3200TE/BE 20890

    208 pin rqfp drawing

    Abstract: 240 pin rqfp drawing BGA 144 MS-034 AAL-1 bga package weight 192 BGA PACKAGE thermal resistance
    Text: Altera Device Package Information April 2002, ver. 10.2 Introduction Data Sheet This data sheet provides the following package information for all Altera devices: • ■ ■ ■ Lead materials Thermal resistance Package weights Package outlines In this data sheet, packages are listed in order of ascending pin count.


    Original     		PDF

    EP4CE15

    Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
    Text: Altera Device Package Information Datasheet DS-PKG-16.2 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead


    Original     		PDF DS-PKG-16 EP4CE15 MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22

    EP4CE6 package

    Abstract: EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80
    Text: Package Information Datasheet for Altera Devices DS-PKG-16.3 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead


    Original     		PDF DS-PKG-16 EP4CE6 package EP4CE40 Altera EP4CE6 EP4CE55 5M240Z 5M1270Z QFN148 5m570z 5M40 5M80

    bd248

    Abstract: UBGA169 EP1800 324 bga thermal HC1S6 EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
    Text: Altera Device Package Information May 2005, vers.13.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 14)


    Original     		PDF

    ep600i

    Abstract: processor cross reference MS-034 1152 BGA Cross Reference epm7064 cross reference EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
    Text: Altera Device Package Information October 2005, vers.14.2 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 16)


    Original     		PDF

    PQFP 176

    Abstract: 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760
    Text: Altera Device Package Information May 2007 version 14.7 Document Revision History Data Sheet Table 1 shows the revision history for this document. Table 1. Document Revision History 1 Date and Document Version May 2007 v14.7 Changes Made ● ● ● ●


    Original     		PDF 144-Pin 100-Pin 256-Pin 780-Pin 256-Pin 68-Pin PQFP 176 240 pin rqfp drawing EP3C5E144 EP1K50-208 processor cross reference EP3C16F484 MS-034 1152 BGA 84 FBGA thermal TQFP 144 PACKAGE DIMENSION FBGA 1760

    240 pin rqfp drawing

    Abstract: BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance
    Text: Altera Device Package Information February 2003, vers. 11.0 Introduction Data Sheet This data sheet provides package information for Altera devices. It includes these sections: • ■ ■ Device & Package Cross Reference below Thermal Resistance (starting on page 9)


    Original     		PDF 7000B, 7000AE, 240 pin rqfp drawing BGA sumitomo 724p EP1C12 Altera pdip top mark epm7032 plcc FBGA672 192 BGA PACKAGE thermal resistance