840 nm GaAs
Abstract: RLT8410G ma4060
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: office@roithner-laser.com http://www.roithner-laser.com RLT8410G TECHNICAL DATA High Power Infrared Laserdiode NOTE! Structure: AlGaAs/GaAs Lasing wavelength: 840 nm typ.
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RLT8410G
840 nm GaAs
RLT8410G
ma4060
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EYP-RWE-0840-06010-1500-SOT02-0000
Abstract: 780 laser diode tunable laser diode 840 nm GaAs 0/840 nm GaAs
Text: Version 0.90 28.01.2008 page: 1 from 4 DFB/DBR TPL/TPA RIDGE WAVEGUIDE LASER with AR-COATING GaAs Semiconductor Laser Diode Tunable Fabry-Perot Laser for External Cavity Operation PRELIMINARY SPECIFICATION RWE/RWL BAL RWE Laser EYP-RWE-0840-06010-1500-SOT02-0000
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EYP-RWE-0840-06010-1500-SOT02-0000
EYP-RWE-0840-06010-1500-SOT02-0000
780 laser diode
tunable laser diode
840 nm GaAs
0/840 nm GaAs
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GWOY6034
Abstract: LL85
Text: Hybride Impuls-Laserdiode mit integrierter Treiberstufe 12 W Hybrid Pulse Laser Diode with Integrated Driver Stage 12 W SPL LL85 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Kostengünstiges Plastikgehäuse • Zuverlässiges InGaAs/GaAs kompressiv
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GWOY6034
GWOY6034
LL85
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tapered amplifier diode
Abstract: No abstract text available
Text: DATA SHEET EYP-TPA-0850-01000-4006-CMT04-0000 Version 0.92 2009-09-18 page 1 from 5 DFB/DBR TPL/TPA TAPERED AMPLIFIER GaAs Semiconductor Laser Diode RWE/RWL BAL General Product Information Product Application 850 nm Tapered Amplifier Raman Spectroscopy C-Mount Package
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EYP-TPA-0850-01000-4006-CMT04-0000
tapered amplifier diode
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Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED SMD TYPE LED SMT850/940 Lead Pb Free Product – RoHS Compliant SMT850/940 High Performance Bi-color TOP LED Bi-color LED of SMT850/940 consists of DDH AlGaAs and GaAs LEDs mounted on the lead frame as TOP LED package and is sealed with epoxy resin.
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SMT850/940
SMT850/940
850nm
940nm
850nm/940nm
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Nelco-4000
Abstract: 10k resistor Nelco4000-13 NELCO-4000-13 EM1052 EM1052-LDTTA P802
Text: 10 Gbit/s XFP Optical Transceiver 850 nm VCSEL for Multimode Fiber E2O Communications, Inc. EM1052-LDTTA Preliminary Data Sheet Features • • • • • • • • • • • 850nm Vertical Cavity Surface Emitting Laser VCSEL Source Technology 850nm GaAs PIN photodetector
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EM1052-LDTTA
850nm
Nelco4000-13)
10Gps
10Gbps
Nelco-4000
10k resistor
Nelco4000-13
NELCO-4000-13
EM1052
EM1052-LDTTA
P802
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A 3120 opto
Abstract: MIE-384A4
Text: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-384A4 Package Dimensions The MIE-384A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. 4.6±0.30 (.181) It is molded in water clear plastic package.
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MIE-384A4
MIE-384A4
40MIN.
00MIN.
A 3120 opto
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MIE-304A2
Abstract: opto 921 high power infrared led
Text: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A2 Package Dimensions The MIE-304A2 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.
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MIE-304A2
MIE-304A2
40MIN.
opto 921
high power infrared led
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high power infrared led
Abstract: MIE-304A4 Unity Opto Technology
Text: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304A4 Package Dimensions The MIE-304A4 is a high power infrared eimtting Unit: mm inches diode in GaAs technology with AlGaAs window 3.00 (.118) coating molded in water clear plastic package.
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MIE-304A4
MIE-304A4
40MIN.
high power infrared led
Unity Opto Technology
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MIE-334A4
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 PACKAGE INFRARED EMITTING DIODE MIE-334A4 Description Package Dimensions The MIE-334A4 is an infrared emitting diode utilizing Unit : mm inches GaAs with AlGaAs window coating chip technology. ψ3.00 (.118) It is molded in water clear plastic package.
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MIE-334A4
MIE-334A4
40MIN.
00MIN.
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MIE-406A2U
Abstract: TO46 package
Text: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A2U Package Dimensions The MIE-406A2U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches
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MIE-406A2U
MIE-406A2U
TO46 package
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MIE-406A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A4U Package Dimensions The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches
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MIE-406A4U
MIE-406A4U
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MIE-304G1
Abstract: 840 nm GaAs
Text: GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-304G1 Package Dimensions The MIE-304G1 is an infrared emitting diode in GaAs Unit : mm inches technology molded in water clear plastic package. ψ3.00 (.118) 5.25 (.207) 1.00 (.040) 4.00
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MIE-304G1
MIE-304G1
40MIN.
00MIN.
840 nm GaAs
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840 nm GaAs
Abstract: RLT8350G NM12
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: rlt@mcb.at http://www.roithner.mcb.at RLT8350G TECHNICAL DATA High Power Infrared Laserdiode Structure: AlGaAs/GaAs quantum well, Aperture 3 x 1.5 µm²
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RLT8350G
840 nm GaAs
RLT8350G
NM12
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high power infrared led
Abstract: MIE-324A2
Text: AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE Description MIE-324A2 Package Dimensions The MIE-324A2 is a high power infrared eimtting Unit : mm inches diode in GaAs technology with AlGaAs window φ 3.55±0.25 (.140±.010) coating molded in water clear plastic package.
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MIE-324A2
MIE-324A2
40MIN.
00MIN.
high power infrared led
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840 opto
Abstract: MIE-526A2U
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A2U Package Dimensions φ5.05 .200 The MIE-526A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-526A2U
MIE-526A2U
00MIN
840 opto
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MIE-556A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A2U Package Dimensions φ5.05 .200 The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-556A2U
MIE-556A2U
00MIN
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MIE-524A4
Abstract: No abstract text available
Text: AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-524A4 Package Dimensions The MIE-524A4 is an infrared emitting diode utilizing φ 5.05 .200 Unit : mm (inches ) GaAs with AlGaAs window coating chip technology. 5.47 (.215) It is molded in water clear plastic package.
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MIE-524A4
MIE-524A4
00MIN
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MIE-536A2U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A2U
MIE-536A2U
00MIN
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MIE-536A4U
Abstract: LTd1117
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A4U Package Dimensions φ5.05 .200 The MIE-536A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-536A4U
MIE-536A4U
00MIN
LTd1117
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MIE-814A2
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-814A2 Package Dimensions Unit: mm inches The MIE-814A2 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.
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MIE-814A2
MIE-814A2
54NOM.
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MIE-546A4U
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A4U Package Dimensions φ5.05 .200 The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )
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MIE-546A4U
MIE-546A4U
00MIN
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MIE-554A4
Abstract: No abstract text available
Text: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-554A4 Package Dimensions Unit:mm inch The MIE-554A4 is an infrared emitting diode utilizing φ5.05 (.200) GaAs with AlGaAs window coating chip technology. 5.47 (.215) It is molded in water clear plastic package.
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MIE-554A4
MIE-554A4
54NOM.
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FMG20D6A
Abstract: No abstract text available
Text: • Round LEDs Shape 10m m Round Emitting Material Emitting Color Part Number Lens-Color Wave Length nm Luminous Intensity IF=10mA *20mA (mcd) Min. Max. Viewing Angle LUR01D Red GaAsP/GaP red diffused 625 *40 - 150 60° LU001D Orange GaAsP/GaP orange diffused
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LUR01D
LU001D
LUG01D
LUY01D
FUR20D6A
FUR20D6C
FMR20D6A
FMR20D6C
FUG20D6A
FUG20D6C
FMG20D6A
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