84-1LMI
Abstract: No abstract text available
Text: NKD-100-D 4 MILLIMETER-WAVE FREQUENCY DOUBLER MMIC 5GHz TO 24GHz Typical Applications • Narrow and Broadband Commercial and • Upconversion Stage used in MW Radio/ Optical Designs Military Radio Designs • Linear and Saturated Radio Applications GENERAL PURPOSE
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NKD-100-D
24GHz
NKD-100-D
24GHz.
84-1LMI
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Untitled
Abstract: No abstract text available
Text: NBB-302 4 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NBB-302
12GHz
NBB-302
14GHz
15GHz
20GHz
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MARCONI amplifier
Abstract: 84-1LMI NN12 P35-5112-000-200
Text: P35-5112-000-200 HEMT MMIC LNA 8.5 – 10.5GHz Features • • 19dB Gain Typical 1dB Noise Figure Description The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
MARCONI amplifier
84-1LMI
NN12
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Untitled
Abstract: No abstract text available
Text: NBB-302 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NBB-302
12GHz
NBB-302
10GHz
14GHz
15GHz
20GHz
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TRANSISTOR R1002
Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Text: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing
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R1002
MIL-STD-883
TRANSISTOR R1002
R1002 TRANSISTOR
R1002
84-1LMI
XR1002
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mmic distributed amplifier
Abstract: 84-1LMI NDA-210-D
Text: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-210-D DC-17 GHz 6000045 Rev. A 1 Features Applications • • • • • • • • Reliable low-cost HBT-based design 6 dB Gain, +12.6 dBm P1dB @ 2 GHz High P1dB of +13.4 dBm at 6.0 GHz and +8.5 dBm at 14.0 GHz
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NDA-210-D
DC-17
NDA-210-D
50-Ohm
84-1LMI
10420-F
mmic distributed amplifier
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AOZ1022DIL
Abstract: 22-A115-A JESD A114 84-3J AOZ1360AIL 2P3M UMC A115A DFN 4X4 AOZ1360DI 2P3M
Text: AOS Semiconductor Product Reliability Report AOZ1360AIL/DIL, rev 3 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Feb 26, 2009 1 This AOS product reliability report summarizes the qualification result for AOZ1360AI/AIL (SO8
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AOZ1360AIL/DIL,
AOZ1360AI/AIL
AOZ1360DI/DIL
AOZ1360AI/AIL
AOZ1360DI/DIL
AOZ1022DIL
PQ-01143C)
AOZ1360AIL
AOZ1360DIL
-105D
22-A115-A
JESD A114
84-3J
2P3M UMC
A115A
DFN 4X4
AOZ1360DI
2P3M
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AOZ1075AI
Abstract: aoz1075 G700HC AOZ107 2a 200v schottky diode AOZ1094DI AOZ1015AI BA004 aoz1094 1015AI
Text: AOS Semiconductor Product Reliability Report AOZ1016AI/1017AI/1015AI/1019AI/1075AI/1081AI/ 1017DI/1094DI, rev 8 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com October 10, 2008
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016AI/1017AI/1015AI/1019AI/1075AI/1081AI/
1017DI/1094DI,
AOZ1016AI/1017AI/1015AI/1019AI/
1075AI/1081AI/1017DI/1094DI.
1015AI/1019AI/1075AI/1081AI/1017DI/1094DI
617x10-5)
77E-8
-105D
AOZ1075AI
aoz1075
G700HC
AOZ107
2a 200v schottky diode
AOZ1094DI
AOZ1015AI
BA004
aoz1094
1015AI
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84-1LMI
Abstract: NN12 P35-5112-000-200
Text: Data sheet HEMT MMIC LNA 8.5 – 10.5GHz Features • 19dB Gain Typical • 1dB Noise Figure The P35-5112-000-200 is an 8.5 – 10.5GHz Gallium Arsenide low noise amplifier. This product is intended for use in a wide range of applications including telecommunications, instrumentation and electronic warfare.
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P35-5112-000-200
P35-5112-000-200
462/SM/02343/200
84-1LMI
NN12
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30SPA0553
Abstract: 30SPA0557 84-1LMI
Text: 27.0-32.0 GHz GaAs MMIC Power Amplifier 30SPA0553 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Ka-Band 2W Power Amplifier 22.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing
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30SPA0553
01-Sep-05
MIL-STD-883
30SPA0553
30SPA0557
84-1LMI
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2Xf transistor
Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Text: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing
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23-Jun-06
X1000
MIL-STD-883
XR1002
2Xf transistor
TRANSISTOR 2xf
xf 2 6-pin
B 1566 Transistor
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P1014
Abstract: xp1014 84-1LMI XP1006 bonding GHz HPA
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 April 2006 - Rev 14-Apr-06 Features XP1006/7 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit
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APH478
P1014
14-Apr-06
XP1006/7
MIL-STD-883
XP1014
I0005129
P1014
xp1014
84-1LMI
XP1006 bonding
GHz HPA
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15MPA0566
Abstract: 84-1LMI
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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15MPA0566
01-Sep-05
MIL-STD-883
15MPA0566
84-1LMI
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8SDV0500
Abstract: 84-1LMI 221E-09
Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider May 2005 - Rev 05-May-05 8SDV0500 Features Chip Device Layout tio n Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing
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05-May-05
8SDV0500
MIL-STD-883
8SDV0500
84-1LMI
221E-09
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P1000 diode
Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain
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P1000
05-May-05
MIL-STD-883
P1000 diode
diode p1000
84-1LMI
P1000
XB1004
XP1000
XU1000
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IC 566 vco
Abstract: 6OSC0460 84-1LMI
Text: 5.5-6.5 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 6OSC0460 Features Chip Device Layout tio n On-Chip Resonator +4.5 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing
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05-May-05
6OSC0460
100KHz
MIL-STD-883
IC 566 vco
6OSC0460
84-1LMI
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Untitled
Abstract: No abstract text available
Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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17-Jan-07
X1004-BD
XR1002
MIL-STD-883
XX1004-BD
XX1004-BD-000V
XX1004-BD-000W
XX1004-BD-EV1
XX1004-BD
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inductance R600
Abstract: No abstract text available
Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection
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01-Mar-05
MIL-STD-883
inductance R600
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U1000
Abstract: XB1004 XU1000
Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing
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U1000
13-May-05
MIL-STD-883
U1000
XB1004
XU1000
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mmic distributed amplifier
Abstract: ultrasonic bond 22DSBA0423 84-1LMI
Text: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 22DSBA0423 Features Chip Device Layout tio n Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing
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05-May-05
22DSBA0423
MIL-STD-883
mmic distributed amplifier
ultrasonic bond
22DSBA0423
84-1LMI
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L1004
Abstract: 84-1LMI
Text: 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier L1004 May 2006 - Rev 10-May-06 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing
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L1004
10-May-06
MIL-STD-883
L1004
84-1LMI
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PL 15 Z EQUIVALENT
Abstract: capacitor 1c5 10C6 12C4 14TX0614
Text: 10.0-18.0 GHz GaAs MMIC Transmitter 14TX0614 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Integrated Mixer, LO Buffer and Output Amplifier 8 dB Conversion Gain 15 dB Image Rejection +17 dBm OIP3 +6 dBm LO Drive Level -12 dBm LO Leakage Power
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14TX0614
01-Sep-05
MIL-STD-883
PL 15 Z EQUIVALENT
capacitor 1c5
10C6
12C4
14TX0614
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IC 566 vco
Abstract: vco mimix 7OSC0462 84-1LMI
Text: 6.4-7.4 GHz GaAs MMIC Voltage Controlled Oscillator May 2005 - Rev 05-May-05 7OSC0462 Features Chip Device Layout tio n On-Chip Resonator +5.0 dBm Output Power -97 dBc/Hz @ 100KHz Phase Noise 20mA @ -5.0V Bias Supply 100% On-Wafer, DC and Output Power Testing
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05-May-05
7OSC0462
100KHz
MIL-STD-883
IC 566 vco
vco mimix
7OSC0462
84-1LMI
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Untitled
Abstract: No abstract text available
Text: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency
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SNA-200
SNA-276,
SNA-200
84-1LMIT1
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