VSMG2000
Abstract: FCD830
Text: VSMG2000X01, VSMG2020X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG2000X01 VSMG2020X01 21725-2 DESCRIPTION VSMG2000X01 series are infrared, 850 nm emitting diodes in GaAlAs DH technology with high radiant power and high
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VSMG2000X01,
VSMG2020X01
VSMG2000X01
AEC-Q101
VEMD2000X01
J-STD-020
2002/95/EC
2002/96/EC
VSMG2000
FCD830
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7852X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based
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VSMY7852X01
VSMY7852X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,
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TSHG6410
TSHG6410
2002/95/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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VSMY7850X01
VSMY7850X01
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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Original
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VSMY7850X01
VSMY7850X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHG5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,
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Original
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TSHG5410
TSHG5410
2002/95/EC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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VSMY7850X01
VSMY7850X01
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHG6210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,
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Original
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TSHG6210
TSHG6210
2002/95/EC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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Original
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VSMY7850X01
VSMY7850X01
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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VSMY7850X01
Abstract: VSMY7850X01-GS08
Text: VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • 21783 • • • • • DESCRIPTION VSMY7850X01 is an infrared, 850 nm emitting diode based
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Original
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VSMY7850X01
VSMY7850X01
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VSMY7850X01-GS08
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Description TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear,
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Original
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TSHG5210
TSHG5210
2002/95/EC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.
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TSHG6200
TSHG6200
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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20113
Abstract: TSHG6200
Text: TSHG6200 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero Description TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.
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TSHG6200
TSHG6200
2002/95/EC
2002/96/EC
18-Jul-08
20113
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vsmy3850gs08
Abstract: vsmy3850 VSMY3850-GS08
Text: VSMY3850 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 94 8553 DESCRIPTION VSMY3850 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant intensity, high
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Original
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VSMY3850
J-STD-020
2002/95/EC
2002/96/EC
VSMY3850
11-Mar-11
vsmy3850gs08
VSMY3850-GS08
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PDF
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Untitled
Abstract: No abstract text available
Text: VSLY5850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • • • • • • • • • • • • 22114 DESCRIPTION As part of the SurfLightTM portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface
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VSLY5850
VSLY5850
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and
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VSMY7852X01
VSMY7852X01
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and
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Original
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VSMY7852X01
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMY7852X01
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and
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Original
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VSMY7852X01
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMY7852X01
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: VSMY7852X01 Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FFEATURES • • • • • • • • • • 20783 • • • • • DESCRIPTION VSMY7852X01 is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and
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Original
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VSMY7852X01
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
VSMY7852X01
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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TSHG6210
Abstract: No abstract text available
Text: TSHG6210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 DESCRIPTION TSHG6210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSHG6210
TSHG6210
18-Jul-08
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PDF
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diode Sr 206
Abstract: TSHG6410
Text: TSHG6410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • 94 8389 DESCRIPTION TSHG6410 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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Original
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TSHG6410
TSHG6410
18-Jul-08
diode Sr 206
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PDF
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TSHG5210
Abstract: No abstract text available
Text: TSHG5210 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 94 8390 DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSHG5210
TSHG5210
18-Jul-08
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Infrared led 850 smd
Abstract: GaAs 850 nm Infrared Emitting Diode 850 nm Infrared Emitting Diode VCSEL array, 850nm smd plcc-2 infrared diode 850 nm Infrared Emitting Diode smd vcsel SMD INF226 infrared transistor
Text: Infrared Light Emitting Diode OP180 & OP280 Series Features: • • • • • • • High power GaAs—OP180, 940 nm center wavelength High power GaAIAs—OP280K and OP280KT, 875 nm center wavelength VCSEL GaAlAs-OP280V, 850 nm center wavelength Point Source GaAlAs-OP280PS, 850 nm center wavelength
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OP180
OP280
GaAs--OP180,
GaAIAs--OP280K
OP280KT,
GaAlAs-OP280V,
GaAlAs-OP280PS,
OP180
OP280K,
OP280KT
Infrared led 850 smd
GaAs 850 nm Infrared Emitting Diode
850 nm Infrared Emitting Diode
VCSEL array, 850nm
smd plcc-2
infrared diode
850 nm Infrared Emitting Diode smd
vcsel SMD
INF226
infrared transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: VSLY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 850 nm • High speed
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VSLY3850
VSLY3850
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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