ETS-300-086
Abstract: CMX881E1 EIA-603 MPT1327 P181 27e 39
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/6 February 2004 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features
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D/881/6
CMX881
MPT1327,
PAA1382
ETS-300-086
CMX881E1
EIA-603
MPT1327
P181 27e 39
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Untitled
Abstract: No abstract text available
Text: CMX881 Baseband Processor for PMR and Trunked Radios D/881/16 June 2008 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI
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CMX881
D/881/16
28-pin
CMX881E1
D/881/16
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84E DIODE
Abstract: 1200b pcb CMX881E1 TBA audio power amplifiers CMX881 CMX881D6 MPT1327 TONE ctcss ETS-300-086 7C2 diode
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/2 May 2002 Advance Information Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal scanning and IRQ on
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CMX881
D/881/2
84E DIODE
1200b pcb
CMX881E1
TBA audio power amplifiers
CMX881
CMX881D6
MPT1327
TONE ctcss
ETS-300-086
7C2 diode
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using octave DTMF DECODER
Abstract: No abstract text available
Text: CMX881 Baseband Processor for PMR and Trunked Radios D/881/17 April 2009 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI
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CMX881
D/881/17
28-pin
CMX881E1
D/881/17
using octave DTMF DECODER
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CMX881
Abstract: tone encoder msk P1217 39-tone CMX881E1 CMX881D6 MPT1327 d881 P1141 39tone
Text: CMX881 Baseband Processor for PMR and Trunked Radios D/881/17 April 2009 Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI
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CMX881
D/881/17
28-pin
CMX881E1
D/881/17
CMX881
tone encoder msk
P1217
39-tone
CMX881E1
CMX881D6
MPT1327
d881
P1141
39tone
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2400B
Abstract: MPT1327
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/9 February 2005 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features
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D/881/9
CMX881
MPT1327,
PAA1382
2400B
MPT1327
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Untitled
Abstract: No abstract text available
Text: CMX881 Baseband Processor for PMR and Trunked Radios D/881/15 July 2007 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on detection of valid Rx signals, level or RSSI
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Original
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CMX881
D/881/15
28-pin
CMX881E1
D/881/15
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CMX881E1
Abstract: CMX881 CMX881D6 MPT1327 84E DIODE using octave DTMF DECODER
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/3 February 2003 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features
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CMX881
D/881/3
CMX881E1
CMX881
CMX881D6
MPT1327
84E DIODE
using octave DTMF DECODER
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CMX881
Abstract: circuit diagram for simple RF transmitter mpt 134 CMX881D6 CMX881E1 MPT1327 selcall PMR 64 Capacitors 8A4 diode
Text: CML Microcircuits COMMUNICATION SEMICONDUCTORS CMX881 Baseband Processor for PMR and Trunked Radios D/881/7 March 2004 Provisional Issue Full-Feature Audio-Processing, Signalling and Data for Half Duplex Dual-Mode Analogue PMR and Trunked Radios Features • Automatic signal type scanning and IRQ on
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CMX881
D/881/7
CMX881
circuit diagram for simple RF transmitter mpt 134
CMX881D6
CMX881E1
MPT1327
selcall
PMR 64 Capacitors
8A4 diode
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UFNF230
Abstract: F-431
Text: U N I T R O D E CO RP 9347963 ^2 D E | ci347clb3 OGlDflfll 92D U N I T R O D E CORP POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel 10 881 D UFNF430 UFNF431 UFNF432 UFNF433 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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i347clb3
UFNF430
UFNF431
UFNF432
UFNF433
UFNF320
UFNF321
UFNF322
UFNF323
UFNF230
F-431
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LB208
Abstract: LB207 LB108 LB101 LB205 LB204 International Power Sources lb101 LB307 Lb206 LB105
Text: I NT L P O W E R S O U R C E S INC b3 E D • 4 0 5 3 3 7 5 0 0 0 0 2 3 0 T5S ■ INP DC/DC Converters ■ International Power Sources, Inc. '" S '. / 200 Butterfield Drive Ashland, Massachusetts 01721 Tel. 508 881-7434 Fax (508) 879-8669 LB Series: 25/30 Watt
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LB101
LB105
LB107
LB108
LB201
LB202
LB203
LB204
LB205
LB206
LB208
LB207
International Power Sources lb101
LB307
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s40H
Abstract: No abstract text available
Text: Schottky Barrier Diodes High frequency rectifying E-pack Lead type E-pack (SMD) Twin Diodes Absolute Maximum Ratings 1.0 *1 1.0 93*2 *1 1.0 1400 65 150 0.58 2 2 120 3.3 -40 -150 150 0.55 2.5 2.5 116 3.3 -5 5 -150 150 0.45 190 -40 -150 150 2.5 3.5 3.5 150
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S60HC1R5
SF10JC
SF20JC
DF30JC6
D25SC6M
S25SC6M
DF25SC6M
D30SC4M
S30SC4M
FTO-220
s40H
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25SC6M
Abstract: D10SC4M 15SCA4M 1/jrc 40150
Text: Schottky Barrier Diodes High f r e q u e n c y r e c t i f y in g E-pack T w in D io d e s 1Z Absolute Maximum Ratings Electrical Characteristics Vf 0jc max [pF] [”C/W] 1 65 25*2 *4 2 120 3.3 * 1 2.5 116 3.3 3.5 190 3.2 150 2.5 130 — lo Conditions Tc
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D10SC4M
120SC3M
240SC
D360SC3M
25SC6M
15SCA4M
1/jrc 40150
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes High fre q u e n c y re c tify in g Absolute Maximum Ratings V rm to Conttns tv ] [A ] C-c] „ S1ZA S4 40 I .2 49* D 4 SC 6 M 60 4 40 5 Type No. . Electrical Characteristics Ifs m Tstg Tj Vf max [A ] C'C] C'C] [V ] 40 — 40 — 150
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S25SC6M
F25SC
S30SC4M
V74-I
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TIL188-4
Abstract: No abstract text available
Text: TILI 87-1 THRU TILI 87-4 TILI 88-1 THRU TILI 88-4 AC-INPUT OPTOCOUPLERS/OPTOISOLATORS D2980, JANUARY 1987-REVISED JULY 1989 AC Signal Input • High Current Transfer Ratio, 500% Minimum at Ip - 10 mA, Up to 1500% Minimum at If - 2 mA with Four Categories Gallium Arsenide Dual-Diode Infrared Source
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D2980,
1987-REVISED
TIL187
TIL188-4
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Lautsprecher LP
Abstract: serviceanleitung kr 660 service-mitteilungen Lautsprecher L 2911 RFT KR 650 Statron Mitteilungen Lautsprecher RFT L 2911 KR 650 service mitteilung
Text: SERVICE-MITTEILUNGEN t R U M H IRADIO-television | AUSGABE: 1985 00 VEB INDUSTRIEVERTRIE B RU ND FU NK UND FER NS EH EN Sei ’j 1 - 4 Mitteilung aus dem VEB Fernsehgerätewerk Staßfurt Einsatz des Tuners FET - 1D der Fa. VIDEO-TON VR Ungarn im Colormat 4306/07_^
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Untitled
Abstract: No abstract text available
Text: Central CMWSH-4 TM Semicondui SURFACE MOUNT SUPERmini DUAL ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low Vp, consists of two galvanically isolat ed SUPERmini™ Silicon Schottky diodes. The CMWSH-4 has been designed for use in high
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14-November
OT-343
OT-343
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marking D3 SOT26
Abstract: No abstract text available
Text: Central" CMXSH-3 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar
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OT-26
CPD48
OT-26
marking D3 SOT26
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CMLSH-4
Abstract: No abstract text available
Text: Central“ CMLSH-4 SURFACE MOUNT PICOmini DUAL, ISOLATED SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4 are two individual electrically isolated 40 volt Schottky Diodes, in a space saving SOT-563 surface mount
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OT-563
CPD48
05-June
OT-563
CMLSH-4
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1N846
Abstract: 1N889 APD400
Text: Datasheet 1N846 THRU 1N889 Central SILICON GENERAL PURPOSE DIODES Semiconductor Corp. AXIAL LEAD GLASS CASE 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors The CENTRAL SEMICONDUCTOR 1N846 s e r i e s
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1N846
1N889
200mA
APD400
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Untitled
Abstract: No abstract text available
Text: Central CMLSH-4DO SURFACE MOUNT PICOmini DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLSH-4DO are two individual electrically isolated 40 volt Schottky Diodes of opposing polarity, in a space
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OT-563
CPD48
28-May
OT-563
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Untitled
Abstract: No abstract text available
Text: Central CMPSH-3 CMPSH-3A CMPSH-3C CMPSH-3S Semiconductor Corp. SURFACE MOUNT SILICON SCHOTTKY DIODES DESCRIPTION: The Central Semiconductor CMPSH-3 series types are Silicon Schottky diodes designed for surface mount fast switching applications requiring a low forward voltage drop.
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OT-23
OT-23
16-June
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Untitled
Abstract: No abstract text available
Text: Central' CMKSH-3T Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T type contains three 3 Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package. This ULTRAmini™ device has
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OT-363
CPD48
OT-363
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diode Marking Code 53
Abstract: No abstract text available
Text: Central" CMOSH-3 Semiconductor eorp. SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOSH-3 type is a Silicon Schottky diode, epoxy molded in an ULTRAmini™ surface mount package, designed for fast switching applications requiring
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100hA
100mA
CPD48
13-November
OD-523
OD-523
diode Marking Code 53
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