Untitled
Abstract: No abstract text available
Text: 123452676 89ABCDEFEED598 123456789A6BC3DEF7989A63A38E311 E31139F3B3FE6FA3 3A396 5789 E3A 9 98!3BC97B89A6F3B6 37B63"E35FE 3#983B3
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89ABCDEF
123456789A6BC3DEF7
89A63A
139F3B3FE6FA
C97B89A6F3B6
37B63
E35FE
A683E6
E8E789A63CA
F3968E$
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD 4C45E57457DC7 234C2 5D C4 E4E ! " #F56$ 9 6$ 9 95 2% 17E &4C3 F 6 '53 A48 7CD45*4DCCBC 5!4B4 F565 A7#* 7+ C24 #2 734544 2B2C 2, 4
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123415678429ABCD58
89ABCDEFD
2D5565
C959C
55DB9A
91ADF9
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 1234567 89ABCDEFD 4C45E57457DC7 234C2 5D C4 E4E ! " #F59 $ 9 $ $ %5 2& 17E '4C3 F % $53 A48 7CD45*4DCCBC 5!4B4 F565 A7#* 7+ C24 #2 734544 2B2C 2, 4 13
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123415678429ABCD58
89ABCDEFD
9A68E
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B169D
Abstract: No abstract text available
Text: 1234567894ABCDEF69 1234567894ABCDEF69 1234567 89ABCDEFD 4C457457DC7 234C2 5D C4E4E F56!" 6!" 6"" ##52$ 17E %4C3 F5&'3 A48 7CD45*4DCCBC 5 4B4F565 A7 * 7#+C24 4 x × 2DC9F8F ,+42C354#+4245234F5-" ./6""
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1234567894ABCDEF69
89ABCDEFD
4F591
55165D4
B169D
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 12345467 89ABCDEFD 4C45E57457DC7 234C2 5D C4 E4E ! "F569 69 6#$5 2% 17E &4C3 F 93'A48 7CD45 4DCCBC 5 4B4 F565 A7") 7* C24 13 x × DC9F8F
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123415678429ABCD58
89ABCDEFD
2D5543
A4BCD4EF59
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PDF
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Untitled
Abstract: No abstract text available
Text: 123415678429ABCD58 123415678429ABCD58 12345667 89ABCDEFD 4C45E57457DC7 234C2 5D C4 E4E ! "F5## ## 6$#5 2% 17E &4C3 F 6' 3 A48* 7CD45+4DCCBC 5 4B4 F565 A7"+ 7, C24 13 x × DC9F8F
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123415678429ABCD58
89ABCDEFD
E5785
4D454
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Thermistor Semitec 104 JT
Abstract: BN35-3H103FB-50 coulomb counter
Text: bq34z100 www.ti.com SLUSAU1 – MAY 2012 Wide Range Fuel Gauge with Impedance Track Technology Check for Samples: bq34z100 FEATURES • • • • 1 2 • • • • • • Supports Li-Ion and LiFePO4 Chemistries Capacity Estimation Using Patented Impedance Track™ Technology for Batteries
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bq34z100
Thermistor Semitec 104 JT
BN35-3H103FB-50
coulomb counter
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3H103
Abstract: 0x0161 XLED
Text: bq34z100 www.ti.com SLUSAU1 – MAY 2012 Wide Range Fuel Gauge with Impedance Track Technology Check for Samples: bq34z100 FEATURES • • • • 1 2 • • • • • • Supports Li-Ion and LiFePO4 Chemistries Capacity Estimation Using Patented Impedance Track™ Technology for Batteries
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bq34z100
3H103
0x0161
XLED
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Untitled
Abstract: No abstract text available
Text: W94AD6KB / W94AD2KB 1Gb Mobile LPDDR Table of Contents1. 2. 3. 4. 5. 6. 7. 8. GENERAL DESCRIPTION . 4 FEATURES . 4
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W94AD6KB
W94AD2KB
A01-004
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A1833
Abstract: No abstract text available
Text: Advance‡ 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 banks MT46H256M16L2 – 32 Meg x 16 x 4 banks x 2 MT46H64M32LF – 16 Meg x 32 x 4 banks MT46H128M32L2 – 16 Meg x 32 x 4 banks x 2 MT46H256M32L4 – 16 Meg x 32 x 4 banks x 4
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MT46H128M16LF
MT46H256M16L2
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
09005aef83a73286
A1833
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Untitled
Abstract: No abstract text available
Text: July 2007 HYB18M256320CFX–7.5 HYE18M256320CFX–7.5 DRAMs for Mobile Applications 256-Mbit Mobile-RAM Data S heet Rev.1.03 Data Sheet HY[B/E]18M256320CFX–7.5 256-Mbit DDR Mobile-RAM HYB18M256320CFX–7.5, HYE18M256320CFX–7.5 Revision History: Rev.1.03, 2007-07
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HYB18M256320CFX
HYE18M256320CFX
256-Mbit
18M256320CFX
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MT46H64M16
Abstract: 6S55 MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options • Vdd/Vddq – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
MT46H64M16
6S55
MT46H64M16LF
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s11 stopping compound
Abstract: DEF01
Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM MT46H8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)
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128Mb:
MT46H8M16LF
MT46H4M32LF
138ns.
09005aef8331b3e9/Source:
09005aef8331b3ce
s11 stopping compound
DEF01
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Untitled
Abstract: No abstract text available
Text: Advance‡ 512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM Features Mobile SDRAM MT48H32M16LF– 8 Meg x 16 x 4 banks MT48H16M32LF – 4 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/mobile Table 1: Features
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512Mb:
MT48H32M16LF
MT48H16M32LF
09005aef81ca5de4/Source:
09005aef81ca5e03
MT48H32M16LF
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-11464-1E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516445 • DESCRIPTION The Fujitsu MB81EDS516445 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double
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DS05-11464-1E
MB81EDS516445
MB81EDS516445
64-bit
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atmel rfid reader schematic
Abstract: FDX-B 11785 crc 125 kHz RFID tag tag SWITCH A233 ATA5558 CRC-16 11785 fdx-b schematic diagram of active rfid tag
Text: Features • • • • • • • • • Contactless Read/Write Data Transmission Radio Frequency fRF: 100 kHz to 200 kHz User Memory 1024 Bits : 32 Write Protectable 32-bit Blocks of Data Deterministic Anticollision: Detection Rate ~ 20 Tags/s with 40-bit Tag ID, RF/32
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32-bit
40-bit
RF/32
16-bit
4681C
atmel rfid reader schematic
FDX-B
11785 crc
125 kHz RFID tag
tag SWITCH
A233
ATA5558
CRC-16
11785 fdx-b
schematic diagram of active rfid tag
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PDF
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MT46H128M16
Abstract: MT46H128M16LF MT46H64M32LF MT46H128 MT46H128M32L2 MT46H256M32 MT46H64M32 MT46H128M MT46H128M16L 240-ball
Text: 2Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H128M16LF – 32 Meg x 16 x 4 Banks MT46H64M32LF – 16 Meg x 32 x 4 Banks MT46H128M32L2 – 16 Meg x 32 x 4 Banks x 2 MT46H256M32L4 – 32 Meg x 16 x 4 Banks x 4 MT46H256M32R4 - 32 Meg x 16 x 4 Banks x 4
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MT46H128M16LF
MT46H64M32LF
MT46H128M32L2
MT46H256M32L4
MT46H256M32R4
09005aef8457b3eb
MT46H128M16
MT46H128M16LF
MT46H64M32LF
MT46H128
MT46H128M32L2
MT46H256M32
MT46H64M32
MT46H128M
MT46H128M16L
240-ball
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circuit diagram of ddr ram
Abstract: HYB18M1G320BF
Text: March 2007 HYB18M 1G 320 B F– 7 . 5 HYE18M 1G 320 B F– 7 . 5 DRAMs for Mobile Applications 1-Gbit x32 DDR Mobile-RAM RoHS compliant Data S heet Rev.1.00 Data Sheet HY[B/E]18M1G320BF 1-Gbit DDR Mobile-RAM HYB18M1G320BF–7.5, HYE18M1G320BF–7.5, Revision History: 2007-03, Rev.1.00
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HYB18M
HYE18M
18M1G320BF
HYB18M1G320BF
HYE18M1G320BF
02022006-J7N7-GYFP
circuit diagram of ddr ram
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PDF
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atmega128 usart code bootloader example
Abstract: M8515 ATMEL m8515 What is SPM and LPM atmega128 bootloader M8535 ATMEL M8535 music generate ATMEL M162 atmega128 USART C code examples
Text: AVR230: DES Bootloader Features • Fits All AVR Microcontrollers with Bootloader Capabilities • Enables Secure Transfer of Compiled Software or Sensitive Data to Any AVR with Bootloader Capabilities 8-bit Microcontroller • Includes Easy To Use, Configurable Example Applications
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AVR230:
ATmega128
16-KB
2541D
atmega128 usart code bootloader example
M8515
ATMEL m8515
What is SPM and LPM
atmega128 bootloader
M8535
ATMEL M8535
music generate ATMEL
M162
atmega128 USART C code examples
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PDF
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power generation POWER COMMAND Hmi 211
Abstract: beijer hmi cables beijer E600 GT10-C30R4-8P pin configuration beijer hmi programming cable pin diagram GT01-C30R4-8P Communication cable pin diagram mitsubishi cab5 pin out GT01-C30R2-9S GT01-C30R4-8P beijer E700
Text: MITSUBISHI ELECTRIC Global partner. Local friend. FACTORY AUTOMATION HMI Visualisation Tools EUROPEAN BRANCHES EUROPEAN REPRESENTATIVES MITSUBISHI ELECTRIC EUROPE B.V. FRANCE 25,Boulevard des Bouvets F-92741 Nanterre Cedex Phone +33 0 1 / 55 68 55 68 MITSUBISHI ELECTRIC EUROPE B.V.
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F-92741
D-40880
I-20041
E-08190
UA-02002
ZA-1600
07075-A
power generation POWER COMMAND Hmi 211
beijer hmi cables
beijer E600
GT10-C30R4-8P pin configuration
beijer hmi programming cable pin diagram
GT01-C30R4-8P Communication cable pin diagram
mitsubishi cab5 pin out
GT01-C30R2-9S
GT01-C30R4-8P
beijer E700
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PDF
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Q61P-A2
Abstract: Q38B QX80 mitsubishi qy80 Q312B-E Q61P QJ71C24N-R4 q32cbl-3m QJ71BR11 Q38B-E
Text: MITSUBISHI ELECTRIC Programmable Logic Controllers MELSEC System Q Technical Catalogue 2004 The MELSEC System Q CPU Modules New Items 2004 Two new high-performance process modules have been added to the existing range of PLC CPU modules, the Q12 P HCPU and Q25(P)HCPU.
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Q00CPU
Q01CPU
QX82-S1,
Q64RD-G
Ni100
QJ71C24N
QJ71C24N-R2
136731-F,
IL-42160
D-40880
Q61P-A2
Q38B
QX80
mitsubishi qy80
Q312B-E
Q61P
QJ71C24N-R4
q32cbl-3m
QJ71BR11
Q38B-E
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PDF
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ELPIDA lpddr
Abstract: 1GB-x16 samsung lpddr LPDDR2 SDRAM samsung MT46H64M16LF cross infineon power cycling
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 banks MT46H32M32LF – 8 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks – 32 Meg x 32 (8 Meg x 32 x 4 banks)
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MT46H64M16LF
MT46H32M32LF
09005aef83d9bee4
ELPIDA lpddr
1GB-x16
samsung lpddr
LPDDR2 SDRAM samsung
MT46H64M16LF cross
infineon power cycling
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PDF
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Untitled
Abstract: No abstract text available
Text: ORCA ORLI10G Quad 2.5Gbps, 10Gbps Quad 3.125Gbps, 12.5Gbps Line Interface FPSC August 2004 Data Sheet Introduction The Lattice ORCA Series 4-based ORLI10G FPSC combines a high-speed line interface with a flexible FPGA logic core. Built on the Series 4 reconfigurable embedded System-on-a-Chip SoC architecture, the ORLI10G consists
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ORLI10G
10Gbps
125Gbps,
ORLI10G
OIF-SFI4-01
16-bit
ORLI10G-2BMN680I
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Transistor BC 1078
Abstract: TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN
Text: TSS400-S1 uPOWER PROGRAMMABLE HIGH-PRECISION SENSOR SIGNAL PROCESSOR SLMS001 -D 407 1, JANUARY 1993 * Onboard Ratiometric Current Source Programmable From 0.15 mA x SV^d/V to 2.4 mA x (SVDD/V) Two Independent Crystal Controlled Timers (32.768 kHz) Internal MOS Oscillator Serves as System
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OCR Scan
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TSS400-S1
SLMS001
-D4071,
12-Bit
56-Segment
TSS400
TSS400-S1)
D4071,
D100Q75
Transistor BC 1078
TSS400-S1
LCD tlc 771
TSS400CFN-S1
abe 630
K-Line L line
BC 557 PNP TRANSISTOR circuits
D4071
digital pressure sensor conditional circuit
44-PIN
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PDF
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