RISC-Processor s3c2410
Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH
|
Original
|
PDF
|
BR-04-ALL-005
BR-04-ALL-004
RISC-Processor s3c2410
MR16R1624DF0-CM8
arm9 samsung s3c2440 architecture
chip 3351 dvd
sp0411n
K9W8G08U1M
sandisk micro SD Card 2GB
arm9 s3c2440
K9F1G08U0A
K6X8008C2B
|
Untitled
Abstract: No abstract text available
Text: NX9548 4.5V to 24V, 8A Adaptive Constant On Time COT Synchronous Buck Regulator Production Datasheet Description Features The NX9548 is a synchronous buck switching regulator with 21mΩ internal N-channel MOSFETs, primarily intended for portable (mobile) applications. The NX9548 operates from
|
Original
|
PDF
|
NX9548
NX9548
|
Untitled
Abstract: No abstract text available
Text: NX9548 4.5V to 24V, 8A Adaptive Constant On Time COT Synchronous Buck Regulator Production Datasheet Description Features The NX9548 is a synchronous buck switching regulator with 21mΩ internal N-channel MOSFETs, primarily intended for portable (mobile) applications. The NX9548 operates from
|
Original
|
PDF
|
NX9548
NX9548
|
L498A
Abstract: 8a7a BT497AKHF160 SC-117 JEDEC BT498AKHF240 498A 6903 controller 62642 Bt498 IR 9624
Text: Advance Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Bt497A/498A 240 MHz Monolithic CMOS Triple 1K x 8 RAMDAC The Bt497A/8A is designed specifically for high-performance, high-resolution color
|
Original
|
PDF
|
Bt497A/498A
Bt497A/8A
L498A
8a7a
BT497AKHF160
SC-117 JEDEC
BT498AKHF240
498A
6903 controller
62642
Bt498
IR 9624
|
Untitled
Abstract: No abstract text available
Text: <:9/. @=A=5FGD9 <=;< CBI9D ?5F7<=A; D9?5J :NKZ[XNY b N\o^cdib m`g\t b 897D nrdo^cdib ^\k\]dgdot \o T`n5gj\_ b D^^jm_dib oj oc` a\pgo ^pmm`io \i_ `g`^omd^\g gda` o`no ja LHF =97<<4:8A WF83 WF93 WF: 0kg`\n` n`` ]`gjr o\]g` \i_ ijo`n91 b K`\qt gj\_ pk oj :59;fXD
|
Original
|
PDF
|
7BAF57F
Vtk5A75
877D1
XDF69
|
B908
Abstract: No abstract text available
Text: K0 C1=41A40&)0) '0 >>C?A9=C K09B8CF,0 =?DC K0B989,0&DC?DCB K0*8A>D780 >;50$>D=C9=7 K0#>F0CE9<<0'A>69;5 K0%>=0 B>;1C540&DC?DC &90"3,&50 & .&/54030D11-*$"5*0/4 *5;53><A1C3>< 1C13>< 'A>35BB0>=CA>; -9A5;5BB0%5CF>A: $51BDA5<5=C020*5BC 90)5A95B
|
Original
|
PDF
|
41A40
1C540
/54030D11-*
35BB0
5A95B
51CDA5B01
569CB
51CDA5B
3H03D
B908
|
Untitled
Abstract: No abstract text available
Text: L0 C1=41A40 978C80A93:0 >>C?A9=C L0D7F,0 =?DC L0D8D,0CA070C,0C80%><9=1;0&DC?DC L0*8A>D780 >;50$>D=C9=7 L0#>F08<<0'A>69;5 &80"1+&30 & -&.32030D00,)$"3)/.2 &80"1+&30 &(-&.32030D00,)$"3)/.2 L0BFAA,01B930 B>;1C9>= *5BC020$51BDA5<5=C *5BC020$51BDA5<5=C
|
Original
|
PDF
|
41A40
978C80
32030D00,
1B930
5BC020
1C540
5AE935
|
IRG4BC10SDPBF
Abstract: No abstract text available
Text: PD -94904A IRG4BC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
|
Original
|
PDF
|
-94904A
IRG4BC10SDPbF
O-220AB
IRG4BC10SDPBF
|
IRG4BC10SDPBF
Abstract: No abstract text available
Text: PD -94904 IRG4BC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
|
Original
|
PDF
|
IRG4BC10SDPbF
O-220AB
O-220AB.
IRG4BC10SDPBF
|
Untitled
Abstract: No abstract text available
Text: PD - 94919A IRG4BC10SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in
|
Original
|
PDF
|
4919A
IRG4BC10SPbF
O-220AB
O-220AB
|
Untitled
Abstract: No abstract text available
Text: PD - 94919 IRG4BC10SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in
|
Original
|
PDF
|
IRG4BC10SPbF
O-220AB
O-220AB
10NTROLLING
O-220AB.
|
Untitled
Abstract: No abstract text available
Text: L0 >4ECDBI0 D1>41B40CN0H0B8N0 ?D@B9>D L0)9H0)94540)895<49>7 L075>3I0@@B?F54 L0BC,60CE,01>40E,0 >@EDC 70$2,(40 (*.(/43030E11-+&$4+0/3 *5<53?= 1D13?= '?9>D0?60#?14 '. 0)5B95C )9>7<501>40E1<0CA-0D?0DA-0 70?>F5BD5BC '. 0 51DEB5C01>405>569DC 51DEB5C
|
Original
|
PDF
|
41B40CN0H0B8
/43030E11-+
5B95C
51DEB5C01
569DC
51DEB5C
1C95B0
54E3540
1491D540%
|
irf 44 n
Abstract: 035H IRFPE30 IRGPC30K IRGPC30M
Text: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
IRG4PC30KPbF
O-247AC
IRFPE30
irf 44 n
035H
IRFPE30
IRGPC30K
IRGPC30M
|
035H
Abstract: IRFPE30 IRGPC30K IRGPC30M IRG4PC30KPBF
Text: PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
IRG4PC30KPbF
O-247AC
IRFPE30
035H
IRFPE30
IRGPC30K
IRGPC30M
IRG4PC30KPBF
|
|
|
irf 44 n
Abstract: IRGBC30KD2 IRGBC30MD2
Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
-94910A
IRG4BC30KDPbF
O-220AB
irf 44 n
IRGBC30KD2
IRGBC30MD2
|
Untitled
Abstract: No abstract text available
Text: PD -94910A IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , T J = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
-94910A
IRG4BC30KDPbF
O-220AB
|
IRGBC30KD2
Abstract: IRGBC30MD2
Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
IRG4BC30KDPbF
O-220AB
IRGBC30KD2
IRGBC30MD2
|
TRANSISTOR tip 122
Abstract: bgg 014 IRGBC30KD2 IRGBC30MD2
Text: PD -94910 IRG4BC30KDPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE start , TJ = 125°C, VGE = 15V Combines low conduction losses with high
|
Original
|
PDF
|
IRG4BC30KDPbF
O-220AB.
O-220AB
TRANSISTOR tip 122
bgg 014
IRGBC30KD2
IRGBC30MD2
|
Untitled
Abstract: No abstract text available
Text: Professionals Trust Pomona Performance Test and Measurement Calibration RF Audio / Video / Broadcast Automotive Telecom 2013 RoHS www.pomonaelectronics.com Table of Contents 2 3 New Products 5 Customized Products 6 Coaxial Cable Assemblies and Breakouts For over half a
|
Original
|
PDF
|
11299-eng
|
SR-25
Abstract: ha2252
Text: HA-2520/883 HA-2522/883 Uncompensated, High Slew Rate Operational Amplifiers March 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. Description The HA-2520/883 and HA-2522/883 are monolithic operational amplifiers which deliver an unsurpassed
|
Original
|
PDF
|
HA-2520/883
HA-2522/883
MIL-STD883
HA-2520/883
HA-2522/883
HA-2520/883)
SR-25
ha2252
|
TB379
Abstract: No abstract text available
Text: HA-2500/883 April 2002 Precision High Slew Rate Operational Amplifier Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2500/883 is a monolithic operational amplifier which is
|
Original
|
PDF
|
HA-2500/883
MIL-STD883
HA-2500/883
TB379
|
5949A
Abstract: No abstract text available
Text: ! "# ! "# $ "# ! % & & ' ' ! " )*+ ) * # , - %*+ ) * . # / . 3 4 $ 5( $ 0 12 6 . %7 / " 1 # 1 % ) 8 - . % ) / / / &$ 0 12 $ 4 9 * < % %% %) % %/ % %4 %9 %* %< ) # 3$$ . / ' 5( $ 3 ; . : 8 : 3 3 & = 3 " > ( & ? ($ ' 8 # > $ 4 9 * < % %% ) )* )< // / / 9
|
Original
|
PDF
|
|
RG8A/U
Abstract: No abstract text available
Text: PASTERNACK ENTERPRISES R G 8A/U IMPEDANCE: 5 2 OHMS INNER CONDUCTOR DIAMETER: . 0 8 5 5 ” 7 STRANDS . 0 2 8 5 ” INNER CONDUCTOR MATERIAL: BARE COPPER DIELECTRIC DIAMETER: .2 8 5 ” DIELECTRIC MATERIAL SOLID POLYETHYLENE NUMBER OF SHIELDS: 1 SHIELD MATERIAL:
|
OCR Scan
|
PDF
|
022B08
RG8A/U
|
C-8-1-75
Abstract: No abstract text available
Text: Power Splitter/Combiners 8 WAY -0° 10 KHz to 8.4 GHz ZCSC-3 PSC-8A FREQ. RANGE MHz ISOLATION dB L MODEL NO. M° Typ. Min INSERTION LOSS, dB Above 9dB U L Typ. Min. Typ. Min. M° Typ. Max. PHASE UNBALANCE Degrees U L Typ. Max. Typ. Max. M° U Max. Max. Max.
|
OCR Scan
|
PDF
|
C-8-1-75
ZFSC-82-75
ZFSC-84-75
ZFSC-5375
ZFSC-8-43
ZFSC-8-1-75
ZFSC-8-43
|
