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    8C SOT23 Search Results

    8C SOT23 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ADR391BUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-R2 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    ADR391AUJZ-REEL7 Analog Devices SOT23-5 Voltage Reference Visit Analog Devices Buy
    AD8005ARTZ-REEL7 Analog Devices SOT23 180MHz,400uA Current Fee Visit Analog Devices Buy
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    8C SOT23 Price and Stock

    Bourns Inc CDSOT23-T08C-Q

    ESD Protection Diodes / TVS Diodes TVS Diode 8V 500W BIDIR SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T08C-Q 9,833
    • 1 $0.37
    • 10 $0.316
    • 100 $0.22
    • 1000 $0.149
    • 10000 $0.148
    		Buy Now

    Bourns Inc CDSOT23-T08C

    ESD Protection Diodes / TVS Diodes TVS Diode Array 8VOLT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CDSOT23-T08C 3,784
    • 1 $0.5
    • 10 $0.427
    • 100 $0.293
    • 1000 $0.185
    • 10000 $0.148
    		Buy Now

    8C SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8c SOT 23

    Abstract: marking 8C MMBZ5228B 8c marking 8c sot23
    Text: SEMICONDUCTOR MMBZ5228B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8C No. 1 Item Marking Device Mark 8C MMBZ5228B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF MMBZ5228B OT-23 8c SOT 23 marking 8C MMBZ5228B 8c marking 8c sot23

    MMBZ52

    Abstract: MARKING 8S SOT-23
    Text: 300mW ZENER DIODES MMBZ52 SERIES • New Product SOT23 Pkg. TA = 25˚C The latest comprehensive data to fully support these parts is readily available. TAPE & REEL SPECIFICATIONS SOT23 Tape Width Reel Diameter Quantity 8mm 178mm 3,000 8mm 330mm 10,000 Nom.


    Original     		PDF 300mW MMBZ52 MMBZ5225 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232 MARKING 8S SOT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTC144EKALT1G 3 • Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow


    Original     		PDF LDTC144EKALT1G

    Diode SMD ED 7ca

    Abstract: F54 SMD CODE MARKING msc 140 -10003 CX25872 GeForce2 MX 400 CX25874 nforce 430 SMD MARKING CODE 201 952 EIA-608B toshiba satellite a10 motherboard
    Text: CX25874/5 Digital Encoder with Standard-Definition TV and High-Definition TV Video Output Data Sheet 101900B August 2004 Ordering Information Model Number Package Operating Temperature CX25874 64-pin TQFP 0 °C – 70 °C CX25875 1 (2)(3) 64-pin TQFP 0 °C – 70 °C


    Original     		PDF CX25874/5 101900B CX25874 CX25875 64-pin CX25875) CX25875. CX25874/5 Diode SMD ED 7ca F54 SMD CODE MARKING msc 140 -10003 CX25872 GeForce2 MX 400 nforce 430 SMD MARKING CODE 201 952 EIA-608B toshiba satellite a10 motherboard

    C4747

    Abstract: MARKING LP SOT-323 8C SOT-23 TSA144C TSC144C TSC144CCU TSC144CCX
    Text: TSC144C NPN Digital Transistor Pin assignment: 1. Input Base 2. Gnd (Emitter) 3. Output (Collector) Vcc = 50V Vin = - 10V ~ +12V Io = 100mA(max.) Equivalent Circuit Features Build-in bias resistor enable the configuration of an inverter circuit without connecting external input


    Original     		PDF TSC144C 100mA TSA144C TSC144CCX TSC144CCU OT-23 OT-323 C4747 MARKING LP SOT-323 8C SOT-23 TSA144C TSC144C TSC144CCU TSC144CCX

    5231B diode

    Abstract: 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B MMBZ5226B MMBZ5257B 5235b
    Text: MMBZ5226B - MMBZ5257B Series Discrete POWER & Signal Technologies N MMBZ5226B - MMBZ5257B Series Zeners Tolerance: B = 5% Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Storage Temperature Range Maximum Junction Operating Temperature


    Original     		PDF MMBZ5226B MMBZ5257B OT-23 5231B diode 5251B MARK 8E diode mark 8m sot-23 5237B 5233B 5228B 5235b

    BC817

    Abstract: BC817-16 BC817-25 BC817-40 EB-500
    Text: DATA SHEET BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 45 Volts VOLTAGE SOT- 23 300 mWatts Unit: inch mm FEATURES • General purpose amplifier applications .103(2.60) .056(1.40) .047(1.20) • Collector current I C = 500mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF BC817 500mA 2002/95/EC OT-23, BC817-16 MIL-STD-750, BC817-25 BC817-40 BC817-16 BC817-25 BC817-40 EB-500

    Untitled

    Abstract: No abstract text available
    Text: BC817 SERIES NPN GENERAL PURPOSE TRANSISTORS POWER 330 mW FEATURES • General purpose amplifier applications 0.120 3.04 • NPN epitaxial silicon, planar design 0.110(2.80) • Collector current IC = 500mA • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF BC817 500mA 2002/95/EC OT-23, MIL-STD-750, BC817-16 BC817-25 BC817-40 2011-REV

    Motorola rectifiers zener diodes

    Abstract: motorola diode smb diode zener motorola
    Text: Table of Contents D iscre te P ro d u c t L in e s . 8C-70/SOT-323 D e vice s. RF Transistors .


    OCR Scan     		PDF 8C-70/SOT-323 OT-23 Motorola rectifiers zener diodes motorola diode smb diode zener motorola

    ATV1014

    Abstract: ce07 8C SOT-23 ATV1000 ATV1001 ATV1002 VR24
    Text: ATV1000 SERIES SILICON ABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON ABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE •r V P.D. INCHES MILLIMETERS 100nA@ Vr =24 VOLTS [HU MIN A 2 8C MAX 3.04 0.1102 MAX 0 1197 B 1 20 1.40 00472 00551 C


    OCR Scan     		PDF ATV1000 OT-23 100nA@ OT-23 0C807 CT2/CT30 V/VR30V 50MHz ATV1006 ATV1014 ce07 8C SOT-23 ATV1001 ATV1002 VR24

    ACS1000

    Abstract: No abstract text available
    Text: /m ACS1000 SERIES SURFACE MOUNT SILICON SCHOTTKY BARRIER DIODES DESCRIPTION: PACKAGE STYLE SOT-23 PACKAGE MU A e c I AS SHOWN V AS SHOWN P.D. 100mW @ TC=25°C D G H J K L S V M LU M É t m HIN MAX 3.04 2 8C 1.40 1.20 1.11 089 0 37 0.50 1.78 2.04 0 313 0.100


    OCR Scan     		PDF OT-23 ACS1000 OC807 100mW 410MV/1 0MA/15MA ACS1001S ACS1001SP ACS1001CC

    81g diode

    Abstract: 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v
    Text: Zener Diode BZX84C 350mW MMBZ5221B - 5256B miniReel Order f' Number Volt SOT23 2.4V 2.7V 3.0V 3.3V 3.9V 4.3V 4.7V 5.1V 5.6V 6.2V 6.8V 7.5V 8.2V 9.1V 10V 12V 15V 16V 18V 20V 22V 24V 27V 30V 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232


    OCR Scan     		PDF BZX84C 350mW MMBZ5221B 5256B BZX84 Z17/W9 81g diode 8F sot23 Z14 SOT23-5 8Y SOT23 zener diode 22v

    Untitled

    Abstract: No abstract text available
    Text: M 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 ic r o c h ip 128 Bit I2C Bus Serial EEPROM DEVICE SELECTION TABLE Device PACKAGE TYPES V cc Range Temp Range 24AA00 1.8 - 6.0 C,l 24LC00 2.5 - 6.0 C,l 24C00 4.5 - 5.5 C, I ,E 8-PIN PDIP/SOIC 2 7 □ NC X NCQ 3 V ss Q


    OCR Scan     		PDF 24AA00 24LC00 24C00 OT-23 24AA00/24LC00/ 24xx00* 128-bit

    849B

    Abstract: BC846 QQ2507 BC849 BC850 BC856 BC860 BC847 SOT23 b 514 transistor
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC846/847/848/849/850 SWITCHING AND AF AMPLIFIER APPLICATIONS • SUITABLE FOR AUTOMATIC INSERTION IN THICK AND THIN-FILM CIRCUITS • LOW NOISE: BC849, BC850 • Com plem ent to BC856 . BC860 SOT-23 Characteristic Symbol


    OCR Scan     		PDF BC846/847/848/849/850 BC849, BC850 BC856 BC860 BC846 BC847/850 BC848/849 849B BC846 QQ2507 BC849 BC850 BC856 BC860 BC847 SOT23 b 514 transistor

    B 660 TG

    Abstract: BCB46B C848B C848A C848C BC848A EO65
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors B C 8 4 6 A L T 1 ,B L T 1 BC8 4 7 A LT1, B L T 1 ,C L T 1 th ru B C 8 5 0 B L T 1 ,C L T 1 NPN Silicon 2 EMITTER BCB46, B C 847 and B C 848 are M o to rola P referred D ev ice s MAXIMUM RATINGS


    OCR Scan     		PDF BCB46, BC846 BC847 BC850 BC848 BC849 OT-23 O-236AB) b3b7255 BC846ALT1 B 660 TG BCB46B C848B C848A C848C BC848A EO65

    BZX 12v zener diode

    Abstract: No abstract text available
    Text: Zener Diode BZX84C MMBZ5221B - 5256B 4 Volt Type BZX 84 T ype M M BZ Part M arkings BZX MMBZ " m iniR eel O rder N um ber 500pcs. IniniB ag 72-5221 72-5223 72-5225 72-5226 72-5228 72-5229 72-5230 72-5231 72-5232 72-5234 72-5235 72-5236 72-5237 72-5239 72-5240


    OCR Scan     		PDF BZX84C MMBZ5221B 5256B 500pcs. BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10V BZX84C1IV BZX84C12V BZX 12v zener diode

    Zener diode 81A

    Abstract: 5252B 5246B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B 5250B DIODE 8L sot 23
    Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES L B L • Small Package : SOT-23. -_L : o MAXIMUM RATING Ta=25°C SYMBOL RATING


    OCR Scan     		PDF MMBZ5221B-5252B OT-23. 5241B MMBZ5242B MMBZ5243B MMBZ5244B 525IB 5246B 5250B Zener diode 81A 5252B 18c zener diode MARK 8F Zener diode 81c Zener diode 18A MMBZ5239B DIODE 8L sot 23

    sot23 transistor marking y2

    Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0


    OCR Scan     		PDF OT-23 OT-23 MMBZ5226 MMBZ5227 MMBZ5228 MMBZ5229 BZX84C4V3 MMBZ5230 BZX84C4V7 MMBZ5231 sot23 transistor marking y2 BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB

    MMBZ5227B 8B

    Abstract: sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B
    Text: MOTOROLA SC -CDIODES/OPTO} 12E D I L3b72SS QOTTìDb d | '-Il-07 MMBZ5226B thru MMBZ5257B MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA CASE 318-05, STYLE 8 SOT-23 TO-236AA/AB THERMAL CHARACTERISTICS Characteristic Sym bol M ax Unit Pd 225 mW 1.8 m wrc


    OCR Scan     		PDF L3b72SS MMBZ5226B MMBZ5257B OT-23 O-236AA/AB) 30--ft-O MM8Z5238B MMBZ5239B MMBZ5240B MMBZ5241B MMBZ5227B 8B sg 81a 25CC MMBZ5226B MMBZ5227B MMBZ5228B MMBZ5229B MMBZ5231B MMBZ5232B MMBZ5233B

    Marking 18A

    Abstract: MARKING 8S SOT-23
    Text: SOT-23 DIODES continued Zener Voltage Regulator Diodes Pinout: 1-Anode, 2-NC, 3-Cathode (Vp - 0.9 V Max @ F = 10 mA for all types.) Marking mA Zener Voltage Vz (±5%) Nominal!1) MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 18A 18B 18C


    OCR Scan     		PDF OT-23 MMBZ5221BLT1 MMBZ5222BLT1 MMBZ5223BLT1 MMBZ5224BLT1 MMBZ5225BLT1 MMBZ5226BLT1 MMBZ5227BLT1 MMBZ5228BLT1 MMBZ5229BLT1 Marking 18A MARKING 8S SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Z en er Diode mini^eei' BZX84C and MMBZ Series ±5% Volt Part Markings Type BZX84 Type MMBZ B Z X 84 C 2 V 4 B Z X 84 C 2 V 7 M M B Z 5221B M M B Z 5223B M M B Z 5225B M M B Z 5226B M M B Z 5228B M M B Z 5229B M M B Z 5230B M M B Z5231B M M B Z 5232B M M B Z 5234B


    OCR Scan     		PDF BZX84C BZX84 5221B 5223B 5225B 5226B 5228B 5229B 5230B Z5231B

    5252B

    Abstract: Zener diode 81A
    Text: MMBZ5221B-5252B SEM ICO NDUCTO R ZENER DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. FEATURES • Small Package : SOT-23. MAXIMUM RATING Ta=25°C SYMBOL RATING CHARACTERISTIC p*D*


    OCR Scan     		PDF OT-23. MMBZ5221B-5252B OT-23 MMBZ5251B MMBZ5252B MMBZ5235B MMBZ5242B MMBZ5245B MMBZ5246B MMBZ5248B 5252B Zener diode 81A

    Zener sot marking 162

    Abstract: marking 8D SOT 89 marking 81t marking 81J
    Text: ZENER DIODES 300mW MMBZ5225 THRU MMBZS267 CASE TYPE: TD-236AB (SOT-23) % Nominal Zener voltage)3) at Maximum Zener Zenar impedance*1* Test curant Iz t Type Marking VzV Izr mA MMBZ5225 MMBZ5226 MMBZ5227 18E 8A 8B 3.0 MMBZ5228 MMBZ5229 MMBZ5230 MMBZ5231 MMBZ5232


    OCR Scan     		PDF 300mW) MMBZ5225 MMBZS267 TD-236AB OT-23) Zener sot marking 162 marking 8D SOT 89 marking 81t marking 81J

    Untitled

    Abstract: No abstract text available
    Text: BSE D • flS3b320 G01b72? 5 H S I P Si-N Channel MOS FET Triode _ S I E M E N S / SPCLi BF 543 S E M IC O N D S T -2 \~ 2 £ ~ Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / d s s = 4 mA, gts = 12 mS ESD:Electrostatic discharge sensitive device, observe handling precaution!


    OCR Scan     		PDF flS3b320 G01b72? Q62702-F1230 OT-23 23b32Ã QDlh730 Q01b731 -022s