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    S4 6AA

    Abstract: GE C6A transistor BC 575 GE 86A HDLC
    Text: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y ,A6HI>8 H:6A:9 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:


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    PDF 86E67 8DCI68IH` 8DCI68I uDCI68I sAADL67A: S4 6AA GE C6A transistor BC 575 GE 86A HDLC

    lg 86A

    Abstract: S69B hcj 6a Q703 HCJ 6k a67ay HCJB
    Text: 97-07,9 ^z,3bffjvbx_ <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHVWTKU Y x><= H:CH>I>K:o ecgj2 Y |DL =:><=Io fjcl BB Y j@1 9>:A:8IG>8 HIG:C<I= ^7:IL:C 8D>A 6C9 8DCI68IH_ Y sG:E6<: 9>HI6C8:o feBB Y 1tueihjdekhfdelee Y +GD9J8I >C 688DG96C8: ID yus kehhjbf 6K6>A67A: Y .D8@:IH 6K6>A67A:


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    PDF 8DCI68IH_ 688DG96C8: sDCI68I 96I6H= 8DCI68I 8IGD68DJHI lg 86A S69B hcj 6a Q703 HCJ 6k a67ay HCJB

    S69B

    Abstract: 91AB A13A a67ay dh-bh
    Text: 86./6 \z,3`ikv] ;9<91AB?5 8978 >=D5? ?5:1E 6JGTURJS Y |DL =:><=I deaf BB v>A: ~Damudfghdj Y kq HL>I8=>C< 86E67>A>IN Y h@1 9>:A:8IG>8 HIG:C<I= \7:IL:C 8D>A 6C9 8DCI68IH] Y sG:E6<: 9>HI6C8: pkBB v>A: ~Damdelfjd Y 26H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:


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    PDF 86E67 8DCI68IH] sDCI68I s6E68 96I6H= 8DCI68I S69B 91AB A13A a67ay dh-bh

    GE C6A

    Abstract: S4 6AA
    Text: :8.1-88 =;>;3CDA7 ;>C7A=76;3C7 @?F7A A7<3G 8LIVWTLU Y fes HL>I8=>C< 86E67>A>IN x>A: *Dcowfhijfl Y j@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` Y fcjBB 8DCI68I <6E 6K6>A67A: x>A: *Dco.jefinfhf Y /D8@:IH 6K6>A67A: Y 36H= I><=I 6C9 ;AJM EGDD;:9 INE:H 6K6>A67A:


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    PDF 86E67 8DCI68IH` 8DCI68I uDCI68I /I6C96G9o GE C6A S4 6AA

    GE C6A

    Abstract: 438 j idc-8g 6EEA ad69a
    Text: 97.07-.^{-4bffkwbf_ <:=:2BC@6 9:89 ?>E6@ @6;2F 7JGUVSJT X he r HL>I8=>C< 86E67>A>IN w>A: *Dcovfhijfl X i@2 9>:A:8IG>8 HIG:C<I= ^7:IL:C 8D>A 6C9 8DCI68IH_ X y:6KN AD69 JE ID ljee2r X tA6HH w >CHJA6I>DC 6K6>A67A: w>A: *Dco.jeehfemk X hBB 8DCI68I <6E 6K6>A67A:


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    PDF 86E67 8DCI68IH_ 8DCI68I tDCI68I rAADL67A: GE C6A 438 j idc-8g 6EEA ad69a

    GE C6A

    Abstract: 5A98 6B5 diode A67A
    Text: :8.18-0 _{-4bffkwbh` =;>;3CDA7 :;9: @?F7A A7<3G 8KHVWTKU X he r HL>I8=>C< 86E67>A>IN X i@2 9>:A:8IG>8 HIG:C<I= _7:IL:C 8D>A 6C9 8DCI68IH` X y:6KN AD69 JE ID ljee2r X tA6HH w >CHJA6I>DC 6K6>A67A: X hBB 8DCI68I <6E 6K6>A67A: X vCK>GDCB:CI6A ;G>:C9AN EGD9J8I _.Dy/ 8DBEA>6CI`


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    PDF 86E67 8DCI68IH` 8DCI68I tDCI68I rAADL67A: 96I6H= GE C6A 5A98 6B5 diode A67A

    4506 gh

    Abstract: CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D
    Text: 1UJF CJRVSU @NHONRL VJRVSU {1| 3SXRWJU _6JFWXUJV \+A6HI>8 >C?:8I>DC 86H: {2| DNQJU \.A>B 7D9Nc2mjRzknjR/kjhoBBd \2>9: G6C<: D; H:CH>C< 9>HI6C8:cjhkPmBf jhjoPkBd \}JIJ6A >CI:G;:G:C8: EG:K:CI>DCcx-w, sitd {3| DJQT~ HSRWUSPPJU \|><=I *~iv6G@ *~ HL>I8=>C< BD9:


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    PDF 86IDG HI6C96G9d 4506 gh CB 7805 CW 7805 H6b 25 dk qb 7805 ck 8DAA wv-cq BD-9C KJ 9D

    GFM 86A

    Abstract: D 1062 transistor p935 gfbb D 1062 gkdl 7
    Text: ;90029.D/D; ><?<4DEB8 ;<:; A@G8B B8=4H 9MJWXUMV X X X X X X X X X X w>A: ~Ddp vgijkgm F 7 8 w>A: ~Ddpggloij w>A: ~Ddpt,tfnffhfhngif 6@<= 6@?D46D 74D4 tDCI68I 6GG6C<:B:CI grb gt tDCI68I G:H>HI6C8: ywggkwc/yp hkfB2q ywggkwc/p jffB2 .: DG9:G>C< >C;Dd ywggkwc/yp gfr hkf1rt


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    PDF 8DCI68IH` 688DG96C8: tDCI68I 96I6H= 8DCI68I 8IGD68DJHI GFM 86A D 1062 transistor p935 gfbb D 1062 gkdl 7

    8216

    Abstract: h 8216 L146 jhdd ejdd
    Text: 97-07 . RQNK ]z,3aeelv^ <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y v>A: ~Dbn uegghle v>A: ~Dbn hddedhld v>A: ~Dbns,sdhddedeehfi 4>=B24B 52B2 4>:; sDCI68I 6GG6C<:B:CI fq` fr` fs gjdB2 eddB ]6I eq j1ts^ sDCI68I G:H>HI6C8: sDCI68I G6I>C< ]-:Hb AD69^


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    PDF 86E67 8DCI68IH^ 688DG96C8: sDCI68I s6E68 96I6H= 8216 h 8216 L146 jhdd ejdd

    ci 827

    Abstract: L146 GEE 86A
    Text: 97-07 . RQNK <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y Y w>A: ~Dco vfhijfl D 5 6 w>A: ~Dco ieefeime w>A: ~Dco t,teneegehjelf 4>=B24B 52B2 4>:; gra gsa gt tDCI68I 6GG6C<:B:CI hkeB2 feeB ]6I fr k1ut^ tDCI68I G:H>HI6C8: tDCI68I G6I>C< ]-:Hc AD69^


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    PDF tDCI68I rAADL67A: t6E68 96I6H= 8DCI68I 8IGD68DJHI ci 827 L146 GEE 86A

    d56r

    Abstract: 8216 L146 5C transistor
    Text: 97-07 . RQNK <:=:2BC@6 9:89 ?>E6@ @6;2F 7KHUVSKT Y Y Y Y Y Y Y Y Y Y Y w>A: ~Dco vfhijfl D 5 6 w>A: ~Dco ieefeime w>A: ~Dco t,teneegehjelf 4>=B24B 52B2 4>:; gra gsa gt tDCI68I 6GG6C<:B:CI hkeB2 feeB ]6I fr k1ut^ tDCI68I G:H>HI6C8: tDCI68I G6I>C< ]-:Hc AD69^


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    PDF tDCI68I rAADL67A: t6E68 96I6H= 8DCI68I 8IGD68DJHI d56r 8216 L146 5C transistor

    100 6n tantalum

    Abstract: vishay cwr11
    Text: capacitors Solid Tantalum Chip Capacitor, Military, Surface-Mount features • Broad capacitance range: 0.10 µF to 100 µF • Broad voltage range: 4 WVDC to 50 WVDC • Military established reliability; Weibull failure rates B, C, and D • Molded case available in four military case codes: A, B, C, D


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    PDF CWR11 CWR11 A3A35 FC8357% VMN-PT9143-0906 100 6n tantalum vishay cwr11

    aadl

    Abstract: vm 87 ad cibh MFH-P BC975 om2t
    Text: <:D4 =-A ?A8F>9 :MJYZWMX W ,=DID >HDA6I>DC W |g+ BD9JA:H ;DG >CI:G;68: 7:IL:C v,1 6C9 :MI:GC6A >CEJI 9:K>8:H DG AD69Hf W w>:A:8IG>8 HIG:C<I= jmhh2 |CEJI ~D9JA: W ,G>CI:9 8>G8J>I 7D6G9 BDJCI +JIEJI ~D9JA: W xCK>GDCB:CI6A ;G>:C9AN EGD9J8I a.D{/ 8DBEA>6CIb y>A: *Dfr v-vhkhhihhnmpj


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    PDF AD69Hf 89D7C BC975FE 96I6H= 8DCI68I 8IGD68DJHI aadl vm 87 ad cibh MFH-P BC975 om2t

    acgf

    Abstract: JW333 86AG W333 D9 - DG e68 DC
    Text: <:E1 +>;I.1:, @BE D9?5J :NKYZWNX W ,=DID >HDA6I>DC W imhh1 w>:A:8IG>8 HIG:C<I= W |CHJA6I>DC G:H>HI6C8:rihhh~ W ,G>CI:9 8>G8J>I 7D6G9 BDJCI W -D{. 8DBEA>6CI =ACGF a/t s jm 89E7D=CF=BA b vDCIGDA 8JGG:CI G6C<: mBt ID jhBt -:K:GH: EGDI:8I>DC KDAI6<: ~6Mf k1 ~JHI G:A:6H: 8JGG:CI


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    PDF 89E7D 96I6H= 8DCI68I 8IGD68DJHI acgf JW333 86AG W333 D9 - DG e68 DC