8GH TRANSISTOR Search Results

8GH TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

8GH TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FPD200P70 Abstract: TL11 TL22 l420 FPD200P70SR Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR	PDF
FPD200P70 Abstract: No abstract text available Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ	PDF
fpd200p70 Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor	PDF
2,5GHz oscillator Abstract: 3A-34 8GHz oscillator Text: SIEM EN S LNA/Mixer PMB 2332 Bipolar IC Target Spezification Functional Description, Benefits: • New B6HF bipolar technology, 25GHz ft • Frequency range up to 3.0GHz • Small outline T-SSOP 16 package • 2.7-4.5V voltage supply • -40°C to +85°C operational temperature range	OCR Scan	25GHz T-SSOP-16 235L05 T-SSOP-16 fl23ShDS 07fi2fcJcÃ 2,5GHz oscillator 3A-34 8GHz oscillator	PDF
PIC16 example hi tech lcd ay0438 Abstract: PIC16 code hi tech SPI marking 3FW rg4bh plcc socket 44 PLCC tht PIR CONTROLLER LP 0001 BO 570 3FW 59 Zener diode marking hsK PIC16 example hi tech lcd Text: P IC 1 6 C 9 X X M ic r o c h ip $ 8-Bit CMOS Microcontroller with LCD Driver Available in Die form Devices included in this data sheet: • PIC16C923 • PIC16C924 Microcontroller Core Features: • High performance RISC CPU • Only 35 single word instructions to learn	OCR Scan	PIC16C923 PIC16C924 PIC16C924) 04/PT PIC16C923 081/CL PIC16C9XX-04) PIC16C9XX PIC16C9XXT PIC16LC9XX PIC16 example hi tech lcd ay0438 PIC16 code hi tech SPI marking 3FW rg4bh plcc socket 44 PLCC tht PIR CONTROLLER LP 0001 BO 570 3FW 59 Zener diode marking hsK PIC16 example hi tech lcd	PDF