Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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Untitled
Abstract: No abstract text available
Text: IS25LQ080 8M-BIT 3V- QUAD SERIAL FLASH MEMORY WITH MULTI-I/O SPI DATA SHEET Integrated Silicon Solution, Inc.- www.issi.com Rev. A 03/12/2014 IS25LQ080 8M-BIT 3V- QUAD SERIAL FLASH MEMORY MULTI- I/O SPI FEATURES • Industry Standard Serial Interface - IS25LQ080: 8M-bit/ 1M-byte
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IS25LQ080
IS25LQ080:
256-bytes
52MB/S
20-year
150mil
208mil
IS25LQ080-JNLA*
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PDF
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UGF6R832H843C
Abstract: No abstract text available
Text: UGF6R832H843CC 32M Bytes 8M x 32 80 Pin FLASH SIMM based on 8M x 8 General Description Features The UGF6R832H843CC is a 8,388,608 bits by 32 FLASH SIMM module . The UGF6R832H843CC is assembled using 4 pcs of 8M x 8 Intel E28F640J3A FLASH Memory mounted on a 80-pin unbuffered
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UGF6R832H843CC
UGF6R832H843CC
E28F640J3A
80-pin
1000mil)
UGF6R832H843C
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PDF
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80pin simm
Abstract: No abstract text available
Text: UGF6R832H843EC 32M Bytes 8M x 32 80 Pin FLASH SIMM based on 8M x 8 General Description Features The UGF6R832H843EC is a 8,388,608 bits by 32 FLASH SIMM module . The UGF6R832H843EC is assembled using 4 pcs of 8M x 8 Intel E28F640J3A FLASH Memory mounted on a 80-pin unbuffered
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UGF6R832H843EC
UGF6R832H843EC
E28F640J3A
80-pin
1000mil)
80pin simm
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PDF
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WED3DG649V-D2
Abstract: No abstract text available
Text: White Electronic Designs WED3DG649V-D2 64MB- 8M x 64 SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The WED3DG649V is a 8M x 64 synchronous DRAM module which consists of four 8M x 16 SDRAM components in TSOP II package and one 2K EEPROM in an 8 pin TSSOP package for Serial Presence Detect
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WED3DG649V-D2
PC100
PC133
WED3DG649V
WED3DG639V10D2
WED3DG639V7D2
WED3DG639V75D2
100MHz
133MHz
WED3DG649V-D2
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PDF
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edo dram 50ns 72-pin simm
Abstract: No abstract text available
Text: UG28E32R S 8HSG(T) 32M Bytes (8M x 32) 72Pin SIMM based on 8M X 8 DRAM w/Voltage Convertor Features General Description The UG28E32R(S)8HSG(T) is a 8,388,608 bits by 32 SIMM module. The UG28E32R(S)8HSG(T) is assembled using 4 pcs of 8M x 8 3.3V 4K/8K refresh EDO DRAM in
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UG28E32R
72Pin
1000mil)
edo dram 50ns 72-pin simm
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64MB-8M
Abstract: DTM60136 DQ0-DQ63
Text: DTM60136 64MB-8M x 64, 168-Pin Unbuffered PC100 SDRAM DIMM Performance range 1 0 0 M H z 1 0 n s @ C L = 2 Features Description Burst mode operation The Dataram DTM60136 Assembly is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The DTM60136 consists of four CMOS Monolithic 8M x 16
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DTM60136
64MB-8M
168-Pin
PC100
DTM60136
400mil
168-pin
DQ0-DQ63
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PDF
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CY7C1516V18
Abstract: CY7C1518V18 CY7C1520V18 CY7C1527V18 cy7c1520v18-200bzc
Text: CY7C1516V18 CY7C1527V18 CY7C1518V18 CY7C1520V18 PRELIMINARY 72-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 72-Mbit density 8M x 8, 8M x 9,4M x 18,2M x 36 • 250-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency
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CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
72-Mbit
250-MHz
CY7C1516V18
CY7C1518V18
CY7C1520V18
CY7C1527V18
cy7c1520v18-200bzc
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HM62G36256
Abstract: HM62G36256BP-4 HM62G36256BP-5 SA10 SA11 SA14 SA16 SA17
Text: HM62G36256 Series 8M Synchronous Fast Static RAM 256k-words x 36-bits ADE-203-1010(Z) Preliminary, Rev. 0.0 Feb. 5, 1999 Features • • • • • • • • • • • • • • • • 3.3V+10%, –5% Operation 8M bit density 200MHz - 250MHz frequency
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HM62G36256
256k-words
36-bits)
ADE-203-1010
200MHz
250MHz
119pin
HM62G36256BP-4
HM62G36256BP-5
SA10
SA11
SA14
SA16
SA17
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MCM63L836A
Abstract: MCM63L918A
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Advance Information Freescale Semiconductor, Inc. 8M Late Write HSTL Order this document by MCM63L836A/D MCM63L836A MCM63L918A The MCM63L836A/918A is an 8M–bit synchronous late write fast static RAM
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MCM63L836A/D
MCM63L836A
MCM63L918A
MCM63L836A/918A
MCM63L836A
MCM63L918A
MOTOROLAMCM63L836A/D
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MCM63R836
Abstract: MCM63R918 4L52
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 8M Late Write HSTL The MCM63R836/918 is an 8M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch,
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MCM63R836/918
MCM63R918
MCM63R836
MCM63R836/D
MCM63R836
MCM63R918
4L52
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8M Late Write HSTL The MCM63R836/918 is an 8M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM63R918
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MCM63R836/D
MCM63R836/918
MCM63R918
MCM63R836
MCM63R836/D
MCM63R836
MCM63R918
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SA9Z-K01
Abstract: projector room wiring diagram R7B Connector elko 106 SA9Z-K02 optical axis and sensitivity adjustment
Text: SA1E Miniature Photoelectric Switches Built-in Amplifier Type (05/03/08) SA1E Miniature Photoelectric Switches A wide variety for material 1 Applicable for Hosedown Requirements 8m 8m m m 50 mm Detected Object 3 Wide Variety Diffuseretroreflective Type Reflector
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D-20537
EP1076-0
SA9Z-K01
projector room wiring diagram
R7B Connector
elko 106
SA9Z-K02
optical axis and sensitivity adjustment
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PDF
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DDR400
Abstract: DDR466 DDR266 DDR266B DDR333 06 DLL 507
Text: A48P3616 Preliminary 8M X 16 Bit DDR DRAM Document Title 8M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue September 5, 2005 Preliminary Preliminary September 2005, Version 0.0 AMIC Technology, Corp. A48P3616 Preliminary
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A48P3616
DDR466
DDR400
DDR333
DDR266
DDR400
DDR466
DDR266
DDR266B
DDR333
06 DLL 507
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PDF
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MCM63R836
Abstract: MCM63R918
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8M Late Write HSTL The MCM63R836/918 is an 8M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM63R918
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MCM63R836/918
MCM63R918
MCM63R836
MCM63R836/D
MCM63R836
MCM63R918
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8M Late Write HSTL The MCM63R836A/918A is an 8M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM63R918A
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MCM63R836A/918A
MCM63R918A
MCM63R836A
MCM63R836A/D
MCM63R836A
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PDF
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DDR400
Abstract: DDR500
Text: A48P3616A Preliminary 8M X 16 Bit DDR DRAM Document Title 8M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue July 29, 2010 Preliminary PRELIMINARY July, 2010, Version 0.0 AMIC Technology, Corp. A48P3616A Preliminary
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A48P3616A
MS-024
DDR400
DDR500
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PDF
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Untitled
Abstract: No abstract text available
Text: A48P3616A Preliminary 8M X 16 Bit DDR DRAM Document Title 8M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue July 29, 2010 Preliminary PRELIMINARY July, 2010, Version 0.0 AMIC Technology, Corp. A48P3616A Preliminary
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A48P3616A
DDR400
DDR500
MS-024
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PDF
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05564
Abstract: CY7C1522V18 CY7C1523V18 CY7C1524V18 CY7C1529V18
Text: CY7C1522V18 CY7C1529V18 CY7C1523V18 CY7C1524V18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 72-Mbit density 8M x 8, 8M x 9, 4M x 18, 2M x 36 The CY7C1522V18, CY7C1529V18, CY7C1523V18, CY7C1524V18 are 1.8V Synchronous Pipelined SRAMs
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CY7C1522V18
CY7C1529V18
CY7C1523V18
CY7C1524V18
72-Mbit
CY7C1522V18,
CY7C1529V18,
CY7C1523V18,
CY7C1524V18
05564
CY7C1522V18
CY7C1523V18
CY7C1529V18
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C1516V18 CY7C1527V18 CY7C1518V18 CY7C1520V18 72-Mbit DDR-II SRAM 2-Word Burst Architecture Features Functional Description • 72-Mbit density 8M x 8, 8M x 9, 4M x 18, 2M x 36 The CY7C1516V18, CY7C1527V18, CY7C1518V18, and CY7C1520V18 are 1.8V Synchronous Pipelined SRAM
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CY7C1516V18
CY7C1527V18
CY7C1518V18
CY7C1520V18
72-Mbit
300-MHz
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PDF
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DG-32240
Abstract: DG32240 Notebook lcd inverter
Text: Endicott Research Group, Inc. 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com Specifications and Applications Information 8m052000 8m Class DC to AC Inverter Preliminary 5/21/97 The ERG 8m052000 8m Class low profile dc to
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8m052000
DG32240
100uf)
DG-32240
Notebook lcd inverter
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PDF
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CY7C1570KV18-550BZI
Abstract: CY7C1570KV18
Text: CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 PRELIMINARY 72-Mbit DDR-II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency Features Configurations • 72 Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) With Read Cycle Latency of 2.5 cycles:
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CY7C1566KV18,
CY7C1577KV18
CY7C1568KV18,
CY7C1570KV18
72-Mbit
CY7C1566KV18
CY7C1577KV18
CY7C1568KV18
CY7C1570KV18-550BZI
CY7C1570KV18
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PDF
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OKI Year Work Week
Abstract: 8635H
Text: HYM76V8635HGT8 8Mx64, 8M x8 based, PC133 DESCRIPTION The H ynix HY M 76V8635H G T8 Series are 8M x64bits Synchronous DRAM M odules. T he m odules are com posed o f eight 8M x8bits CM O S Synchronous D R AM s in 400m il 54pin TSOP-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pin glass-epoxy
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OCR Scan
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HYM76V8635HGT8
8Mx64,
PC133
76V8635H
x64bits
54pin
168pin
0022uF
8635H
OKI Year Work Week
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PDF
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mask rom
Abstract: A00000-H
Text: PCMCIA/J EIDA FAST ACCESS MASK ROM VARIATION Part Number KWB201SDC* KWB401SDC* KWB601SDC* KWB801SDC* KWB111SDC* KWB121SDC* KWB141SDC* KWB161SDC* Memory Size 2M 4M 6M 8M 10M 12M 14M 16M BYTE BYTE BYTE BYTE BYTE BYTE BYTE BYTE Description 2M 4M 6M 8M 10M 12M
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OCR Scan
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KWB201SDC*
KWB401SDC*
KWB601SDC*
KWB801SDC*
KWB111SDC*
KWB121SDC*
KWB141SDC*
KWB161SDC*
mask rom
A00000-H
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