BZT03C
Abstract: No abstract text available
Text: BZT03C. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
Original
|
BZT03C.
100ms,
D-74025
01-Apr-99
BZT03C
|
PDF
|
BZT03D
Abstract: No abstract text available
Text: BZT03D. Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
Original
|
BZT03D.
100ms,
D-74025
01-Apr-99
BZT03D
|
PDF
|
Telefunken tk 19
Abstract: BZT03C
Text: BZT03C. Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539
|
Original
|
BZT03C.
100ms,
D-74025
12-Dec-94
Telefunken tk 19
BZT03C
|
PDF
|
BZT03D
Abstract: No abstract text available
Text: BZT03D. TELEFUNKEN Semiconductors Silicon Z–Diodes Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539 Absolute Maximum Ratings
|
Original
|
BZT03D.
100ms,
D-74025
BZT03D
|
PDF
|
BZT03D
Abstract: No abstract text available
Text: BZT03D. Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539
|
Original
|
BZT03D.
100ms,
D-74025
12-Dec-94
BZT03D
|
PDF
|
Telefunken tk 19
Abstract: bzt03c 7v5,
Text: BZT03C. TELEFUNKEN Semiconductors Silicon Z–Diodes Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539 Absolute Maximum Ratings
|
Original
|
BZT03C.
100ms,
D-74025
Telefunken tk 19
bzt03c
7v5,
|
PDF
|
BZV85
Abstract: BZV85Cxx "Voltage Regulator Diodes" 5V6 DIODE BZV85-C3V6 BZV85-C75 JTP 141
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product data sheet Supersedes data of 1996 Apr 26 1999 May 11 NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series FEATURES DESCRIPTION • Total power dissipation:
|
Original
|
M3D130
BZV85
DO-41)
BZV85-C3V6
BZV85-C75)
115002/00/02/pp9
BZV85Cxx
"Voltage Regulator Diodes"
5V6 DIODE
BZV85-C75
JTP 141
|
PDF
|
120V ZENER
Abstract: 160V zener diode 5C transistor 6V2 Zener Diode BZX15c5v1 bzx15c8v2 bzx15c15v 5c75v
Text: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Power Dissipation Ptot Junction Temperature 1.5 TS Unit 1) W 175 O -65 to +175 O Tj Storage Temperature Range 1) Value C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
|
Original
|
200mA
120V ZENER
160V zener diode
5C transistor
6V2 Zener Diode
BZX15c5v1
bzx15c8v2
bzx15c15v
5c75v
|
PDF
|
160V zener diode
Abstract: 5C transistor 6V2 Zener Diode 5c75v
Text: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Power Dissipation Ptot Junction Temperature 1.5 TS Unit 1) W 175 O -65 to +175 O Tj Storage Temperature Range 1) Value C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
|
Original
|
200mA
160V zener diode
5C transistor
6V2 Zener Diode
5c75v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.
|
Original
|
LL-41
200mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BZX1.5C… SILICON PLANAR ZENER DIODES Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
|
Original
|
200mA
|
PDF
|
5C transistor
Abstract: 6V2 Zener Diode ZM15C
Text: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Cathode band Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.
|
Original
|
LL-41
200mA
5C transistor
6V2 Zener Diode
ZM15C
|
PDF
|
5C transistor
Abstract: 6V2 Zener Diode
Text: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.
|
Original
|
LL-41
200mA
5C transistor
6V2 Zener Diode
|
PDF
|
5C transistor
Abstract: 6V2 Zener Diode zener 5v6
Text: ZM1.5C… SILICON PLANAR ZENER DIODES LL-41 Absolute Maximum Ratings Ta = 25 oC Symbol Value Ptot 1.5 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O Power Dissipation 1) Unit 1) W C C Valid provided that electrodes are kept at ambient temperature.
|
Original
|
LL-41
200mA
5C transistor
6V2 Zener Diode
zener 5v6
|
PDF
|
|
|
Zener Diode BZx 84
Abstract: BZX 12v IN4728A diode zener 6V8 BZX C 55 in4742a BZX 12v zener diode in4756a IN4739A IN4738A IN4733A
Text: （package）:DO-35 Zener Voltage Range 1 Dynamic resistance Reverse Leakage Current TYPE BZX 55/C 0V8 BZX 55/C 2V0 BZX 55/C 2V4 BZX 55/C 2V7 BZX 55/C 3V0 BZX 55/C 3V3 BZX 55/C 3V6 BZX 55/C 3V9 BZX 55/C 4V3 BZX 55/C 4V7 BZX 55/C 5V1 BZX 55/C 5V6 BZX 55/C 6V2
|
Original
|
DO-35
BZ4756A
IN4757A
IN4758A
IN4759A
IN4760A
IN4761A
IN4762A
IN4763A
IN4764A
Zener Diode BZx 84
BZX 12v
IN4728A
diode zener 6V8 BZX C 55
in4742a
BZX 12v zener diode
in4756a
IN4739A
IN4738A
IN4733A
|
PDF
|
8v2 850
Abstract: No abstract text available
Text: BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
OCR Scan
|
BZT03C.
Res-5600
01-Apr-99
8v2 850
|
PDF
|
Untitled
Abstract: No abstract text available
Text: B ZT03D Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium power transient suppression circuits
|
OCR Scan
|
ZT03D
Resist-970-5600
01-Apr-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Vishay Telefunken v is h a y Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539
|
OCR Scan
|
BZT03C.
100ns
01-Apr-99
-Apr-99
|
PDF
|
ic 85600
Abstract: 0 258 007 351
Text: BZT03D. VISHAY Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9 5?9 Medium power voltage regulators and medium power transient suppression circuits
|
OCR Scan
|
BZT03D.
BZT03DVishay
01-Apr-99
ic 85600
0 258 007 351
|
PDF
|
0 258 007 351
Abstract: No abstract text available
Text: Tem ic BZT03D. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power
|
OCR Scan
|
BZT03D.
12-Dec-94
l2-Dec-94
0 258 007 351
|
PDF
|
1N007
Abstract: fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005
Text: FAGQR ELECTRONICS 57E D WÊ 3 ^ 3 2 5 Q000LS3 T31 « F G R S CROSS REFERENCE COMPETITIVE SERIES COMPETITOR FAGOR SERIES 1 5SKE 8 2 - 1 5KE 300 1 SKE 8 2 A -1 5KE 300 A THOM/CS1/MOT/GI THOM/GSI/MOT/GI 1 SKE 8 2 C -1 5KE 300 C 1 5SE 12 - 1 SSE 300 1 5SE 12 A • 1 5SE 300 A
|
OCR Scan
|
0G0Gb53
15SKE
15KE82
5KE300C
1KAB10-1KAB1C0
W005F-W10F
100JB
FB1001
FB1006
1N007
fri07
1N007 rectifier
MDA 2500
1Ns408
MDA 2506
by164 philips
wiom
BY225-200
ITT 1N4005
|
PDF
|
BZTO3-C
Abstract: bzto3c BZTO3
Text: Te m ic BZT03C. TELEFU N K EN Semiconductors Silicon Z-Diodes Features • G lass passivated junction • H erm etically sealed package • C lam ping tim e in p icosecon d s Applications M edium pow er voltage regulators and medium pow er transient suppression circuits
|
OCR Scan
|
BZT03C.
BZTO3-C
bzto3c
BZTO3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: v tS H A Y _BZT03D— ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and
|
OCR Scan
|
BZT03D--
D-74025
01-Apr-99
|
PDF
|
ZT03C
Abstract: bzt03c
Text: vS ü y ▼ BZT03C. Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications 94 9539 Medium power voltage regulators and medium
|
OCR Scan
|
BZT03C.
10mnical
D-74025
01-Apr-99
ZT03C
bzt03c
|
PDF
|
