A420
Abstract: A440 A441 A442 SL1024A 15KA
Text: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features This product is not recommended for new designs. Please refer to Littelfuse series SL1024A. Non-radioactive Lead Free Failsafe Option Applications Telecommunication
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Original
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8x10mm
A440/A441/A442
10kA/10A)
SL1024A.
A440/F
A442/F:
UL-497B
57845/VDE
A420
A440
A441
A442
SL1024A
15KA
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PDF
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16LV81923low
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PDF
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A450
Abstract: A451 A452 SL1021A
Text: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A455 0/A 0/A451 451/A /A452 3-electrode 20kA/10A Enhanced Discharge Series This product is not recommended Features for new designs. Please refer to Non-radioactive Lead Free Failsafe Option Littelfuse series SL1021A.
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Original
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8x10mm
0/A451/A452
A450/A451/A452
451/A
20kA/10A)
SL1021A.
A450/F:
A452/F:
A450
A451
A452
SL1021A
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PDF
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CS16LV81923
Abstract: 850C SRAM 512K
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16LV8192
CS16LV81923
850C
SRAM 512K
|
PDF
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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PDF
|
Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M53D128168A Revision History Revision 1.0 16 Nov. 2007 - Original Revision 1.1 (02 Jan. 2008) - Change BGA package - Modify tIS Revision 1.2 (16 Jan. 2008) - Add 8x10mm BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2008
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Original
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8x10mm
M53D128168A
M53D128168A
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PDF
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a440 ceramic
Abstract: A441 A420 A440 A442
Text: GAS DISCHARGE TUBE 8x10mm No. A440/A441/A442 3-electrode 10kA/10A Standard Series Features Non-radioactive Lead Free Failsafe Option Applications Telecommunication Data Transmission Subscriber protection Underground cables Specifications Packaging A440:
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Original
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8x10mm
A440/A441/A442
10kA/10A)
A440/F
A442/F:
UL-497B
57845/VDE
a440 ceramic
A441
A420
A440
A442
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PDF
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Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
48BGA
CS16Llow
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PDF
|
Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. History Issue Date 2.0 Initial issue with new naming rule Feb.15, 2005 2.1 Add 48CSP-6x8mm package outline Mar. 08, 2005 2.2 Revise 48CSP-8x10mm pkg code from W to K
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Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
|
PDF
|
Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM 512k Word By 16 bit CS16LV81923 Revision History Rev. No. 2.0 2.1 2.2 History Initial issue with new naming rule Add 48CSP-6x8mm package outline Revise 48CSP-8x10mm pkg code from W to K Issue Date Feb.15, 2005 Mar. 08, 2005
|
Original
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CS16LV81923
48CSP-6x8mm
48CSP-8x10mm
CS16LV81923
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PDF
|
Untitled
Abstract: No abstract text available
Text: High Speed Super Low Power SRAM CS16LV16163K 1M Word x 16 Bit PACKAGE DIMENSIONS: 48 ball Mini_BGA-8x10mm 14 Rev. 1.0 Chiplus reserves the right to change product or specification without notice.
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Original
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CS16LV16163K
BGA-8x10mm
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PDF
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A450
Abstract: A451 A452
Text: GAS DISCHARGE TUBE 8x10mm 451 /A 452 No. A4 A4550/A 0/A451 451/A /A452 Specifications 3-electrode 20kA/10A Enhanced Discharge Series Packaging A450: 00=Bulk (2.000 pcs.) A450/F: 00_Bulk (500 pcs.) Features A451: 04=Tray (250 pcs.) A452/F: 04=Tray (500 pcs.)
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Original
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8x10mm
A450/A451/A452
451/A
20kA/10A)
A450/F:
A452/F:
A450
A451
A452
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PDF
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T14L1024N
Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for
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Original
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T14L1024N
10/12/15ns
T14L1024N
110/105/100mA
32thout
36-Ball
8x10mm)
T14L1024N-10C
T14L1024N-10H
T14L1024N-10J
T14L1024N-10P
T14L1024N-10W
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PDF
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|
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M36L0T7050T2
Abstract: M58LT128HB M58LT128HT M36L0t7050
Text: M36L0T7050T2 M36L0T7050B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 32 Mbit (2 Mb x16) PSRAM, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory – 1 die of 32 Mbit (2 Mb x16) Pseudo SRAM
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Original
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M36L0T7050T2
M36L0T7050B2
M36L0T7050T2:
88C4h
M36L0T7050B2:
88C5h
M36L0T7050T2
M58LT128HB
M58LT128HT
M36L0t7050
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PDF
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a6583
Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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Original
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M30L0R8000T0
M30L0R8000B0
54MHz
a6583
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
|
PDF
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100PF
Abstract: BS616UV8010 BS616UV8010BC BS616UV8010BI
Text: Ultra Low Power/Voltage CMOS SRAM 512K X 16 bit BSI FEATURES BS616UV8010 DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade : 20mA (Max.) operating current
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Original
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BS616UV8010
100ns
R0201-BS616UV8010
100PF
BS616UV8010
BS616UV8010BC
BS616UV8010BI
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PDF
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BS616LV8013
Abstract: BS616LV8013BC BS616LV8013BI
Text: BSI Very Low Power/Voltage CMOS SRAM 512K X 16 bit FEATURES BS616LV8013 DESCRIPTION • Very low operation voltage : 2.4~3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current
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Original
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BS616LV8013
100ns
x8/x16
BS616LV8013
-40oC
8x10mm)
R0201-BS616LV8013
BS616LV8013BC
BS616LV8013BI
|
PDF
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M68AR512DL
Abstract: TFBGA48
Text: M68AR512DL 8 Mbit 512K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 512K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V
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Original
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M68AR512DL
TFBGA48
M68AR512DL
TFBGA48
|
PDF
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100PF
Abstract: BS616UV1610 BS616UV1610BC BS616UV1610BI BS616UV1610FC BS616UV1610FI
Text: BSI Ultra Low Power/Voltage CMOS SRAM 1M X 16 bit BS616UV1610 FEATURES DESCRIPTION • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 2.0V C-grade: 25mA Max. operating current I-grade : 30mA (Max.) operating current
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Original
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BS616UV1610
100ns
x8/x16
BS616UV1610
R0201-BS616UV1610
100PF
BS616UV1610BC
BS616UV1610BI
BS616UV1610FC
BS616UV1610FI
|
PDF
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PSRAM
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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Original
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M36L0R8060T1
M36L0R8060B1
M36L0R8060T1:
880Dh
M36L0R8060B1:
880Eh
54MHz
PSRAM
RAM 2112 256 word
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36L0R8060B1
M36L0R8060T1
M69KB096AA
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PDF
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510T
Abstract: BS616LV4023 BS616LV4023BC BS616LV4023BI BS616LV4023DC BS616LV4023DI
Text: BSI Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable BS616LV4023 DESCRIPTION FEATURES • Very low operation voltage : 2.4 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade : 25mA (Max.) operating current
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Original
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BS616LV4023
100ns
x8/x16
BS616LV4023
-40oC
8x10mm)
R0201-BS616LV4023
510T
BS616LV4023BC
BS616LV4023BI
BS616LV4023DC
BS616LV4023DI
|
PDF
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a10 bga-9
Abstract: transistors equivalent 0912 BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC BS616UV1620FI
Text: Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BSI BS616UV1620 DESCRIPTION FEATURES • Ultra low operation voltage : 1.8 ~ 2.3V • Ultra low power consumption : Vcc = 1.8V C-grade : 25mA Max. operating current I- grade : 30mA (Max.) operating current
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Original
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BS616UV1620
100ns
x8/x16
BS616UV1620
R0201-BS616UV1620
a10 bga-9
transistors equivalent 0912
BS616UV1620BC
BS616UV1620BI
BS616UV1620FC
BS616UV1620FI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M68AR024D 16 Mbit 1M x16 1.8V Asynchronous SRAM OBSOLETE PRODUCT FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 1.65 to 1.95V I/O SUPPLY VOLTAGE: 1.5 to 1.95V 1M WORDS x 16 bits LOW POWER SRAM EQUAL CYCLE and ACCESS TIME: 70ns LOW VCC DATA RETENTION: 1.0V
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Original
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M68AR024D
TFBGA48
|
PDF
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