FHT9018
Abstract: 8Y SOT23
Text: ᄰྯ General Purpose Transistors FHT9018 General Purpose Transistors ᄰྯ DESCRIPTION & FEATURES 概述及特點 High Frequency Low Noise Amplifier 高頻低噪聲放大 SOT-23 PIN ASSIGNMENT 引腳說明 PIN NAME FUNCTION PIN NUMBER 引腳序號
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Original
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OT-23
FHT9018
OT-23
hFE1FHT9018R
FHT9018O
FHT9018Y
FHT9018G
FHT9018
8Y SOT23
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PDF
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FHT9018
Abstract: 8Y SOT23
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 General Purpose Transistors 三极管 NPN Silicon FHT9018 FEATURES 特点 •High Frequency Low Noise Amplifier
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Original
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FHT9018)
FHT9018R
FHT9018O
FHT9018Y
FHT9018G
OT-23
FHT9018
8Y SOT23
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PDF
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UN1216
Abstract: XN6216
Text: Composite Transistors XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Collector to base voltage Rating Collector to emitter voltage of element Collector current 1 : Collector Tr1 2 : Base (Tr1)
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Original
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XN6216
UN1216
XN6216
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PDF
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UN1216
Abstract: XP6216
Text: Composite Transistors XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1216 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings
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XP6216
UN1216
UN1216
XP6216
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PDF
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DTA123YS3
Abstract: DTC123YS3 R210k MARKING LP SOT-323
Text: CYStech Electronics Corp. Spec. No. : C362S3 Issued Date : 2002.08.16 Revised Date : 2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors Built-in Resistors DTC123YS3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external
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Original
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C362S3
DTC123YS3
DTA123YS3
OT-323
UL94V-0
DTA123YS3
DTC123YS3
R210k
MARKING LP SOT-323
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PDF
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DTA123YN3
Abstract: DTC123YN3
Text: CYStech Electronics Corp. Spec. No. : C362N3 Issued Date : 2002.08.16 Revised Date : 2002.11.02 Page No. : 1/4 General Purpose NPN Digital Transistors Built-in Resistors DTC123YN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external
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Original
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C362N3
DTC123YN3
DTA123YN3
OT-23
UL94V-0
DTA123YN3
DTC123YN3
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PDF
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UN2216
Abstract: UNR2216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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Original
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XP06216
XP6216)
UN2216
UNR2216
XP06216
XP6216
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PDF
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UN1216
Abstract: UNR1216 XN06216 XN6216
Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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Original
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XN06216
XN6216)
UN1216
UNR1216
XN06216
XN6216
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PDF
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UN2216
Abstract: UNR2216 XP06216 XP6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 (XP6216) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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Original
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2002/95/EC)
XP06216
XP6216)
UN2216
UNR2216
XP06216
XP6216
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PDF
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element
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Original
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2002/95/EC)
XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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PDF
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UN1216
Abstract: UNR1216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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Original
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XP06216
XP6216)
UNR1216
UN1216)
UN1216
XP06216
XP6216
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PDF
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UN1216
Abstract: UNR1216 XN06216 XN6216
Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3
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Original
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XN06216
XN6216)
UNR1216
UN1216)
UN1216
XN06216
XN6216
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element
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Original
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2002/95/EC)
XN06216
XN6216)
UNR2216
UN2216)
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PDF
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: Composite Transistors XN06216 XN6216 Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element 2.8+0.2 –0.3 6 (0.65) • Two elements incorporated into one package
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Original
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XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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PDF
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UN1216
Abstract: UNR1216 XP06216 XP6216
Text: Composite Transistors XP06216 XP6216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1216(UN1216) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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Original
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XP06216
XP6216)
UNR1216
UN1216)
UN1216
XP06216
XP6216
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PDF
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UN2216
Abstract: UNR2216 XN06216 XN6216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05
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Original
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2002/95/EC)
XN06216
XN6216)
UN2216
UNR2216
XN06216
XN6216
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PDF
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UNR2216
Abstract: XP06216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
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Original
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2002/95/EC)
XP06216
UNR2216
UNR2216
XP06216
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PDF
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UNR2216
Abstract: XN06216G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features 1: Collector (Tr1) 2: Base (Tr1) 3: Collector (Tr2)
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Original
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2002/95/EC)
XN06216G
UNR2216
UNR2216
XN06216G
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216 (XN6216) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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Original
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2002/95/EC)
XN06216
XN6216)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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Original
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2002/95/EC)
XP06216
UNR2216
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PDF
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UNR2216
Abstract: XP06216
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06216 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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Original
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2002/95/EC)
XP06216
UNR2216
UNR2216
XP06216
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PDF
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UNR2216
Abstract: XN06216G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN06216G Silicon NPN epitaxial planar type For switching/digital circuits • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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Original
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2002/95/EC)
XN06216G
UNR2216
XN06216G
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PDF
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sot23 transistor marking y2
Abstract: BZXB4C10 marking 8A sot-23 y2 sot23 marking y1 sot-23 transistor marking w9 8c SOT 23 8y transistor marking 62. SOT23 TRANSISTOR MARKING YB
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Zener Diodes Pinout 1-Anode, 2-N.C., 3-Cathode (Tolerance ± 5%) VZ (Norn) Volts U.S. Standards Device Marking 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0
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OCR Scan
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OT-23
OT-23
MMBZ5226
MMBZ5227
MMBZ5228
MMBZ5229
BZX84C4V3
MMBZ5230
BZX84C4V7
MMBZ5231
sot23 transistor marking y2
BZXB4C10
marking 8A sot-23
y2 sot23
marking y1 sot-23
transistor marking w9
8c SOT 23
8y transistor
marking 62. SOT23
TRANSISTOR MARKING YB
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PDF
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SOT23 MARK Y2
Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Text: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)
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OCR Scan
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DO-204AH
DO-35)
OT-23
O-236AA/AB)
MLL4678
MLL4679
MLL4680
L4681
MLL4682
SOT23 MARK Y2
BZXB4C10
MARK Y6 Transistor
SOT23 MARK Y3
1N5239B equivalent
BZXB4C4V7
MMBPU131
glass zener diodes motorola 1n746
B2X84C
1N756A
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PDF
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