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    9 BJE 80 Search Results

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    9 BJE 80 Price and Stock

    Greenliant Systems Ltd GLS85LS1064E-S-I-LBJE-ND129

    Managed NAND 64GB SATA BGA 145b (SLC 250K) I-TEMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GLS85LS1064E-S-I-LBJE-ND129
    • 1 $796
    • 10 $780.45
    • 100 $780.45
    • 1000 $780.45
    • 10000 $780.45
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    Greenliant Systems Ltd GLS85LS1032E-S-I-LBJE-ND129

    Managed NAND 32GB SATA BGA 145b (SLC 250K) I-TEMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GLS85LS1032E-S-I-LBJE-ND129
    • 1 $508.67
    • 10 $497.5
    • 100 $497.5
    • 1000 $497.5
    • 10000 $497.5
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    9 BJE 80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BJE+118

    Abstract: No abstract text available
    Text: revisio n-K O .ie. ' 9 8 .0 7 .3 0 M it s u b is h i M5M5408BFP/TP/RT/KV/KR l s is M U Z J M W U tr Notice: T h is is not a fin al specification. S om e p aram e tric lim its are su bje ct to ch an ge 4194304-BIT 524288-WORD BY 8-BIT CMOS STATIC RAM FEATURES


    OCR Scan     		PDF M5M5408BFP/TP/RT/KV/KR 4194304-BIT 524288-WORD M5M5408B 288-words 32-pin BJE+118

    Untitled

    Abstract: No abstract text available
    Text: bJE 1 • MMRbSDB QDS3b74 5 m HB56A169 Series ■HITS HI TA C H I / L O G I C / A R R A Y S / M E M — 1 6 ,7 7 7 ,2 1 6 -W o rd x 9 -B it H igh D e n s ity D y n a m ic R A M M o d u le T he H B 56A 169 is a 16 M x 9 dyn am ic RA M m o d u le , m o u n te d 9 p iec es o f 16-M bit D R A M


    OCR Scan     		PDF QDS3b74 HB56A169 5116100J) 30-pin HB56A169A HB56A169AT Q023bflD B56A169B

    NPN planar RF transistor

    Abstract: BGY90A
    Text: DEVELOPMENT DATA BGY90A T h is data sheet co n ta in s advance in fo r m a tio n and s p e c ific a tio n s are su bje ct to change w it h o u t n o tic e . U H F POWER MODULE The B G Y 9 0A is a tw o stage U H F pow er m odule designed fo r use in m obile tra n s m ittin g e q u ip m e n t


    OCR Scan     		PDF BGY90A BGY90A NPN planar RF transistor

    Untitled

    Abstract: No abstract text available
    Text: IBM 43RF1111 Preliminary SiGe High Dynamic Range 800-2000 MHz Low Noise Am plifier Features • 0.8 to 2G H z operation fo r cellular and digital w ireless applications • High IIP3 and Low Noise m eet dem anding system requirem ents • Low power, single supply 3 volts


    OCR Scan     		PDF 43RF1111 T23-6

    9 BJE 61

    Abstract: 9 BJE 80 BJE 61 BJE 80 20/9 BJE 61
    Text: ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: ÎP 3 -P 2 P 7 -P 4 ) P 6 -P 5 ) P 9 -P 8 ) : : : : J 2 -J 1 ) (J 6 -J 3 ) (J 5 -J 4 ) (J 8 -J 7 ) : : : : 2.0 INDUCTANCE: ; (P 6 -P 5 ) ; (P 8 -P 9 ) 3.0 LEAKAGE INDUCTANCE: P 3 -P 2 P 7 -P 4 P 6 -P 5 P 9 -P 8


    OCR Scan     		PDF 10OKHz, 9 BJE 61 9 BJE 80 BJE 61 BJE 80 20/9 BJE 61

    SI-50148

    Abstract: No abstract text available
    Text: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 TXD+ TXD-IP2 — ifiuuuLa CT 1CT i 1CT C T @ - 75 RXD+ -A /W RXD— P8 75 < TD+ TDRD+ RD- 75- 75< lOOOpF, 2KV N D T ES ELECTRICAL SPECIFICATIONS: 1.0 P IN S W ITHDUT E L E C T R IC A L CO NNECTIO N ARE OMITTED, 1.0 TURNS RATIO: ( P 7 - P 6 - P 8 : (J3 -J6 )


    OCR Scan     		PDF 350uH 100KHz, SI-50148

    Untitled

    Abstract: No abstract text available
    Text: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TCT PE TDR D + (P 4 )RCT RD—(P6>- c h a s s is g n d ( p 8 )- lOOOpF, 2KV RX- NOTES 1.0 COMPLIES WITH THE EUROPEAN D I R E C T I V E 2 0 0 2 / 9 5 / E C , CALLING FDR THE ELIMINATION DF LEAD AND CITHER HAZARDOUS S UB ST ANC ES FROM


    OCR Scan     		PDF 350uH SI--501 70--G

    Untitled

    Abstract: No abstract text available
    Text: lOOOpFj 2KV ELECTRICAL SPECIFICATIONS: N DT ES 1.0 TU RN S RATIO : P 3 - P 5 - P 6 (P 1 -P 4 -P 2 ) : (J3 -J6 ) : (J1 -J2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 ) (P 1 -P 2 )


    OCR Scan     		PDF --60206--F

    ttp 021

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2K V jàr SHIELD ELECTRICAL SPECIFICATIONS: DESIGNED FOR OPERATION FROM -4 0 TO 8 5 1.0 INDUCTANCE: P 2 -P 3 (P 4 -P 5 ) P 7 -P 8 ) (P 9 -P 1 0 ) 2 .0 TU R N S (P 2 -P 3 ) : (J1 -J2 ) (P 4 -P 5 ) : (J3 -J6 ) (P 7 -P 8 ) : (J4 -J5 ) (P 9 -P 1 0 ) : (J 7 -J 8 )


    OCR Scan     		PDF SI--51 ttp 021

    fC CONNECTOR DRAWING

    Abstract: No abstract text available
    Text: J1 J2 J3 J4 J5 J6 J7 J8 TX+ TXRX+ RX- ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 -P 3 : (J 1 -J 2 ) (P 4 -P 6 ) : (J 3 -J 6 ) : 1CT : 1CT ± 2% : 1CT : 1CT ± 2% Bel Stewart Connector 11118 Susquehanna Trail, South Glen Rock, Pa 17327-9199 717.234.7512


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1000pF 2KV SHIELD TRD4TRCT4 Hi & S TRD4+ TRD3TRCT3 TRD3+ TRD2TRCT2 TRD2+ @ © © © © - J8 T R P 4 J7 TR P4+ - J6 T R P 2 - H - J5 T R P 3 J4 TRP3+ - 1 J3 T R P 2 + r _T J2 T R P 1 - - J1 TRP1 + - •


    OCR Scan     		PDF 1000pF P10-P11) GR1089

    e p1 50171

    Abstract: No abstract text available
    Text: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd- P 6 CHASSIS GNd ( P 8 ) - TX+ TXRX+ RX- lOOOpF, 2 K V NDTEi 1, UNUSED PIN P7 IS DMITTED, ELECTRICAL SPECIFICATIONS 1.0 TURNS RATIO : ( P 4 - P 5 - P 6 ) (P 3 -P 2 -P 1 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0


    OCR Scan     		PDF 350uH 100KHz, SI--501 e p1 50171

    BJE contact

    Abstract: No abstract text available
    Text: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 A L L RESISTORS ARE ±57. TDLERANCE, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : (J3 -J6 ) ( P 1 - P 3 - P 2 ) : (J1 -J2 ) 1CT 1CT


    OCR Scan     		PDF 350uH 100KHz, 10OKHz, SI-50151 BJE contact

    Untitled

    Abstract: No abstract text available
    Text: lOOOpF+gQ'/ j 2 K V PINS 4&5 a NOTES ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 8 - P 6 - P 7 : (J 6 -J 3 ) ( P 2 - P 3 - P 1 ) : (J 2 -J 1 ) 1CT : 1 ± 3 % 1CT : 1 ± 3 % 2.0 INDUCTANCE: 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE:


    OCR Scan     		PDF 100KHz 350uH

    Untitled

    Abstract: No abstract text available
    Text: 1CT ! 1CT TD S H IE L D lOOOpF, 2 K V NDTES 1.0 PIN S WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 A L L R E S I S T O R S ARE ±57. TOL ERA NCE , ELECTRICAL SPECIFICATIONS: 1.0 TU RN S RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) 2 .0 INDUCTANCE:


    OCR Scan     		PDF SI-50202

    Untitled

    Abstract: No abstract text available
    Text: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R I C A L CDNNECTIDN ARE DMITTED, 2.0 A L L RESISTORS ARE ± TOLERANCE, ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J 3 -J 6 ) : (J 1 -J 2 ) 2 .0 INDUCTANCE:


    OCR Scan     		PDF 350uH 10OKHz,

    FL128

    Abstract: No abstract text available
    Text: 1CT ! 1CT TD SHIELD lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT ELECTRICAL CDNNECTIDN ARE DMITTED, 2.0 A LL RESISTORS ARE ±57. TDLERANCE, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : (J 3 -J6 ) ( P 1 - P 3 - P 2 ) : (J 1 -J2 ) 1CT 1CT 2.0 INDUCTANCE:


    OCR Scan     		PDF 350uH 10OKHz, FL128

    Si502

    Abstract: No abstract text available
    Text: 1CT : 1CT 75 -AA/V- J1 TX+ J2 TX- J3 RX+ J4 1CT J5 J6 : 1CT J7 75 •A M a lOOOpF, 2 K V 1.0 CDMPLIES WITH THE EURDPEAN DIRECTIVE 2 0 0 2 /9 5 /E C , CALLING FDR THE ELIMINATION DF LEAD AND CITHER HAZARDDUS SUBSTANCES FRDM ELECTRDNIC PRDDUCTS, ELECTRICAL SPECIFICATIONS


    OCR Scan     		PDF 2002/95/EC, 350uH 100KHz, Si502

    40022

    Abstract: No abstract text available
    Text: lOOOpF j 2KV ELECTRICAL SPECIFICATIONS: N f lT F S RATIO : P 6 - P 5 - P 4 (P 3 -P 2 -P 1 ) 1.0 TU RN S 2 .0 INDUCTANCE : 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE : 5 .0 DC RESISTANCE: ( J 1 - J 2 ) (P 6 -P 4 ) : (J6 -J3 ) : (J2 -J1 ) (P 6 -P 4 )


    OCR Scan     		PDF 350uH 100KHz, 40022

    BJE 80

    Abstract: No abstract text available
    Text: 1CT i 1CT lOOOpF 2KV SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P2-P3 (P2-F (P4-P5) (P4(P7—P8) (P9-P10) 2.0 TURNS RATIO: (P2-P3) : (J1-J2) (P4-P5) : (J3-J6) P7-P8) : (J4-J5) (P9-P10) : (J7-J8) : : : : 350uH 350uH 350uH 350uH MIN. MIN. MIN. MIN.


    OCR Scan     		PDF P9-P10) 350uH 10OKHz, BJE 80

    9 BJE 80

    Abstract: No abstract text available
    Text: 1CT ! 1CT lOOOpF, 2 K V NDTES 1.0 PINS WITHDUT E L E C T R I C A L CONNECTION ARE OMITTED, 2.0 A L L RESISTORS ARE ± 57. TOLERANCE, ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 7 - P 6 - P 8 : (J 3 -J6 ) ( P 1 - P 3 - P 2 ) : (J 1 -J2 ) 1CT 1CT 2.0 INDUCTANCE:


    OCR Scan     		PDF 350uH 100KHz, SI-50164 9 BJE 80

    FL128

    Abstract: No abstract text available
    Text: 1CT ! 1CT J1 J2 J3 J4 J5 J6 J7 J8 TD+ TD- RCT rd - P 6 CHASSIS G N d (P 8 ) lOOOpF, 2 K V TX+ TXRX+ RX- NDTES 1.0 COMPLIES WITH THE EUROPEAN D IR E C T IV E 2 0 0 2 / 9 5 / E C , CALLIN G FDR THE ELIMINATION OF LEAD AND CITHER HAZARDOUS SUBSTAN CES FROM


    OCR Scan     		PDF 350uH 350uH 2002/95/EC, 10OKHz, COMPATIBLE-260 FL128

    SI-50084

    Abstract: No abstract text available
    Text: 1 : lO O O pF, 1.41 C T 2KV ELECTRICAL SPECIFICATIONS: NOTES: 1.0 TURNS RATIO : P 4 - P 5 - P 6 (P 1 -P 2 -P 3 ) : (J3 -J6 ) : (J1 -J2 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 2 - J 1 )


    OCR Scan     		PDF 350uH 100KHz, SI-50084rD4 SI-50084

    Untitled

    Abstract: No abstract text available
    Text: lOOOpFj £KV ELECTRICAL SPECIFICATIONS: N OT ES 1.0 TURNS RATIO : P 3 - P 5 -P 6 : ( J 3 - J 6 ) ( P 1 - P 4 -P 2 ) : ( J 1 - J 2 ) ( P 1 -P 2 ) ( P 3 -P 6 ) 2.0 INDUCTANCE : 350uH MIN. @ 0.1V, 350uH MIN. @ 0.1V, 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P 6,P 5 ,P 3 ) TO (J6 .J3 )


    OCR Scan     		PDF 350uH 100KHz, SI-10191