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    9 LHA MARKING Search Results

    9 LHA MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    9 LHA MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NCV663SQ18T1G

    Abstract: basic ac motor reverse forward electrical diagram 419C NCP662 NCP663 NCV662 NCV663 SC82 9 lha marking
    Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series


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    PDF NCP662, NCV662, NCP663, NCV663 NCP662/NCV662 NCP662/D NCV663SQ18T1G basic ac motor reverse forward electrical diagram 419C NCP662 NCP663 NCV662 NCV663 SC82 9 lha marking

    Untitled

    Abstract: No abstract text available
    Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series


    Original
    PDF NCP662, NCV662, NCP663, NCV663 NCP662/NCV662 NCP662/D

    Untitled

    Abstract: No abstract text available
    Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series


    Original
    PDF NCP662, NCV662, NCP663, NCV663 NCP662/NCV662 NCP662/D

    NCP662

    Abstract: NCP663 419C NCV662 NCV663 SC82
    Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series


    Original
    PDF NCP662, NCV662, NCP663, NCV663 NCP662/NCV662 NCP662/D NCP662 NCP663 419C NCV662 NCV663 SC82

    Untitled

    Abstract: No abstract text available
    Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series


    Original
    PDF NCP662, NCV662, NCP663, NCV663 NCP662/NCV662 NCP662/D

    mdd 1051

    Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
    Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY


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    PDF 1950W9B 1950W9A GBfMi14NIUM, UG-491AW 91-6C S-1950W9B Force-11 s9614163) mdd 1051 circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614

    Untitled

    Abstract: No abstract text available
    Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S


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    PDF fl23b320 Q62702-F964 Q62702-F1021 23b320

    Untitled

    Abstract: No abstract text available
    Text: FINAL CO M 'Li-7/10/12/15 IND:-10/12/15/20 MACH5-512/MACH5LV-512 V A N T I S COMP ANY M A C H 5 -5 1 2/1 2 0 -7 /1 0/1 2/1 5 M A C H 5 -5 1 2/160-7/10/12/1 5 M A C H 5 -5 1 2/184-7/10/12/1 5 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 M A C H 5 -5 1 2/256-7/10/12/1 5


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    PDF Li-7/10/12/15 MACH5-512/MACH5LV-512 5LV-512/160-7/10/12/15 MACH5LV-512/256-7/10/12/15 asynchr2/XXX-7/10/12/15 BGD352 352-Pin 16-038-BGD352-1 DT106 ACH5-512/XXX-7/10/12/15

    Fuji Electric SM

    Abstract: No abstract text available
    Text: This maiertaland he Information herein Is Ihe properly of Fuji Electric Co .Ltd. They shall be neither («produced, copiée tent, or disclosed in any way whatsoever for ihe use of any third partidor used for ihe manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.


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    PDF YG802C09R H04-004-07 YG802C09R Fuji Electric SM

    HD63463

    Abstract: HD63463P8 SMD SL HD63463-8 SMD MARKING CODE 4E sad1 smd HD63463CP8 ST412 120 SMD HARD DISK CONTROLLER BTM marking
    Text: H D63463-H ard D isk C o n tro lle r H D C DESCRIPTION The HD63463 (HDC: Hard Disk Controller) is a CMOS device developed for use as a peripheral LSI for the 16-bit microprocessor HD68000 (MPU: Microprocessing Unit). The HDC connects the host system and the Winchester type hard


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    PDF D63463- HD63463 16-bit HD68000 HD684S0 ST506/ST412/ST412HP DTP32 DTP16 DK812S HD63463 HD63463P8 SMD SL HD63463-8 SMD MARKING CODE 4E sad1 smd HD63463CP8 ST412 120 SMD HARD DISK CONTROLLER BTM marking

    Untitled

    Abstract: No abstract text available
    Text: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention


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    PDF MIL-STD-883, MIL-STD-883 0000S53 10change

    H04-004-06

    Abstract: fuji electric year month dc ampmeter Circuits 1000H H04-004 capacitor variator E66188 MS5K2564
    Text: Re vised Re c o r d s Fuji Electric CaJJd. . — •— —i- - DW GJfO. | í si i M S5K 2 5 6 4 2/6 H04-004-06 X 1. SCOPE T h i s s p e c i f i c a t i o n p r o v i d e s t h e r a t i n g s and t e s t r e q u i r e m e n t s f o r FUJ


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    PDF H04-004-06 ENE241) UL1414 E66188 UL1449 El23894 LR98228 H04-004-03 H04-004-06 fuji electric year month dc ampmeter Circuits 1000H H04-004 capacitor variator E66188 MS5K2564

    Untitled

    Abstract: No abstract text available
    Text: — MT5C6401 883C 64K x 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86015 • M IL-STD-883, Class B • Radiation tolerant (consult factory) 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns


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    PDF MT5C6401 IL-STD-883, 22-Pin IL-STD-883 TQQ2117

    Untitled

    Abstract: No abstract text available
    Text: MT5C128K8A1 RE VO LU T IO NA RY PINOUT 128K x 8 SRAM M IC R O N SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down


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    PDF MT5C128K8A1 128Kx 32-Pin

    12T67

    Abstract: bb2412 ipip3 T350 MARKING MHT siemens 1q B82412-A3100-M MMIC marking CODE cf fgmd d794
    Text: GaAs MMIC SIEMENS P r e lim in a r y CMY 95 d a t a * G aAs mixer with integrated IF-amplifierer fo r mobile com m unication ‘ Frequency range 0.8 GHz to 2.5 GHz ‘ Very low power consumption 1mA lyp. * G ood intermodulatfon perform ance * Single positive supply voltage


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    PDF HLEHFD21/HB 12T67 bb2412 ipip3 T350 MARKING MHT siemens 1q B82412-A3100-M MMIC marking CODE cf fgmd d794

    B2520

    Abstract: 6c223
    Text: /— > / - \ \ l S I I N S I MI C O N D I C l O K . INC SRAM M T 5 C 6 4 0 5 883C 16K X 4 S R A M 16K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNM ENT Top View • SMD 5962-86859 • MIL-STD-883, Class B • Radiation tolerant (consult factory)


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    PDF MIL-STD-883, 24-Pin MIL-STD-883 MT5CS406 B2520 6c223

    Untitled

    Abstract: No abstract text available
    Text: '\ A U S T I N S E M I C O N D U C T O R , I NC. MT5C2561 883C 256K x 1 SRAM ^ SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-88725,-88544 • M IL-STD -883, Class B • Radiation tolerant (consult factory)


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    PDF MT5C2561 24-Pin 28-Pin HIL-STD-883

    5 PEN PC TECHNOLOGY advance

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 16 MEG X MT9D169 9 DRAM M OD ULE 16 MEG x 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply


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    PDF MT9D169 30-pin 096-cycle A0-A11 5 PEN PC TECHNOLOGY advance

    HA 1156 R

    Abstract: MT5C2568DJ-20IT
    Text: MICRON SEMICONDUCTOR INC b? E D WË blllSMT OOD'íBSG 0 5 4 • MT5C2568 32K X 8 SRAM I^IIC R O N SRAM 32K X 8 SRAM • High speed: 1 0 ,12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options


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    PDF MT5C2568 28-Pin MT5C2566 HA 1156 R MT5C2568DJ-20IT

    micron DRAM

    Abstract: No abstract text available
    Text: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access


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    PDF MT8D88C132H MT16D88C232H micron DRAM

    T2D48

    Abstract: FPM DRAM 30-pin SIMM 0/MT2D48
    Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE ¡V U C F O N DRAM MODULE IV IU U U L t. 4 MEG x 8 4 MEG ABYTE -5VFAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM O S silicon-gate process


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    PDF MT2D48 30-pin, 500mW 048-cycle 30-Pin T2D48M-6 T2D48 FPM DRAM 30-pin SIMM 0/MT2D48

    T3D19

    Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
    Text: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process


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    PDF MT3D19 30-pin 625mW 024-cycle 128ms MT3D19) T3D19 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM

    Untitled

    Abstract: No abstract text available
    Text: MICRON SEMICONDUCTOR INC b3E J> 512K X • b 1 1 1 5 4‘i 0000021 bl3 ■ U R N MT16D T 51232 32, 1 MEG x 16 DRAM MODULE 512 K x 32,1 MEG X 16 DRAM MODULE FAST-PAGE-MODE (MT16D(T)51232) LOW POWER, EXTENDED REFRESH (MT16D(T)51232 L) FEATURES PIN ASSIGNMENT (Top View)


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    PDF MT16D 72-pin 424mW 512-cycle

    SE236

    Abstract: No abstract text available
    Text: M I CR ON S E M I C O N D U C T O R INC b7E D • b l l l S H T GQ0'ì37lì D7T H M R N ADVANCE MT5C512K8B2 512K X 8 SRAM M IC R SO N I FHCONfVICTOn INC SRAM 512Kx 8 SRAM FEATURES • High speed: 12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal


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    PDF MT5C512K8B2 512Kx 36-Pin MT5CS12K8B2 SE236