NCV663SQ18T1G
Abstract: basic ac motor reverse forward electrical diagram 419C NCP662 NCP663 NCV662 NCV663 SC82 9 lha marking
Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series
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NCP662,
NCV662,
NCP663,
NCV663
NCP662/NCV662
NCP662/D
NCV663SQ18T1G
basic ac motor reverse forward electrical diagram
419C
NCP662
NCP663
NCV662
NCV663
SC82
9 lha marking
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Untitled
Abstract: No abstract text available
Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series
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Original
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PDF
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NCP662,
NCV662,
NCP663,
NCV663
NCP662/NCV662
NCP662/D
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Untitled
Abstract: No abstract text available
Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low−Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series
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Original
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PDF
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NCP662,
NCV662,
NCP663,
NCV663
NCP662/NCV662
NCP662/D
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NCP662
Abstract: NCP663 419C NCV662 NCV663 SC82
Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator http://onsemi.com This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series
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Original
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PDF
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NCP662,
NCV662,
NCP663,
NCV663
NCP662/NCV662
NCP662/D
NCP662
NCP663
419C
NCV662
NCV663
SC82
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Untitled
Abstract: No abstract text available
Text: NCP662, NCV662, NCP663, NCV663 100 mA CMOS Low Iq Low-Dropout Voltage Regulator This series of fixed output low−dropout linear regulators are designed for handheld communication equipment and portable battery powered applications which require low quiescent current. This series
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Original
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PDF
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NCP662,
NCV662,
NCP663,
NCV663
NCP662/NCV662
NCP662/D
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mdd 1051
Abstract: circuit k 3683 916c Transistors marking WZ ke marking transistor transistor xl 3001 S9614
Text: . . . . . . . .l: :;. . . . . . . . . . . . . . . . . .’. . . . . . . . MIIA3.1950W9B 12 Ne.rch 1970 SUPERSEDING MIL.T.1950W9A 12 hub? 19s9 MSLITARY SPfXfFffXTfON .-. SFADCONDUCTOR DEVICE, TRANSISTOR, PNP, GBfMi14NIUM, HIGH-FREQUENCY
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1950W9B
1950W9A
GBfMi14NIUM,
UG-491AW
91-6C
S-1950W9B
Force-11
s9614163)
mdd 1051
circuit k 3683
916c
Transistors marking WZ
ke marking transistor
transistor xl 3001
S9614
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Untitled
Abstract: No abstract text available
Text: T - 3 I- 0 .3 T Silicon N Channel MOSFET Tetrode 32E D • fl23b320 OQLbflL? b BF 996 S I S IP SIEMENS/ SPCL-, SEMICONDS • • • For input stages in UHF TV tuners High transconductance Low noise figure Type Marking Ordering code for versions in bulk BF 996 S
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fl23b320
Q62702-F964
Q62702-F1021
23b320
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Untitled
Abstract: No abstract text available
Text: FINAL CO M 'Li-7/10/12/15 IND:-10/12/15/20 MACH5-512/MACH5LV-512 V A N T I S COMP ANY M A C H 5 -5 1 2/1 2 0 -7 /1 0/1 2/1 5 M A C H 5 -5 1 2/160-7/10/12/1 5 M A C H 5 -5 1 2/184-7/10/12/1 5 M A C H 5 -5 1 2 /1 9 2 -7 /1 0 /1 2 /1 5 M A C H 5 -5 1 2/256-7/10/12/1 5
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Li-7/10/12/15
MACH5-512/MACH5LV-512
5LV-512/160-7/10/12/15
MACH5LV-512/256-7/10/12/15
asynchr2/XXX-7/10/12/15
BGD352
352-Pin
16-038-BGD352-1
DT106
ACH5-512/XXX-7/10/12/15
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Fuji Electric SM
Abstract: No abstract text available
Text: This maiertaland he Information herein Is Ihe properly of Fuji Electric Co .Ltd. They shall be neither («produced, copiée tent, or disclosed in any way whatsoever for ihe use of any third partidor used for ihe manufacturing purposes without the express written consent of Fuji Electric Co., Ltd.
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YG802C09R
H04-004-07
YG802C09R
Fuji Electric SM
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HD63463
Abstract: HD63463P8 SMD SL HD63463-8 SMD MARKING CODE 4E sad1 smd HD63463CP8 ST412 120 SMD HARD DISK CONTROLLER BTM marking
Text: H D63463-H ard D isk C o n tro lle r H D C DESCRIPTION The HD63463 (HDC: Hard Disk Controller) is a CMOS device developed for use as a peripheral LSI for the 16-bit microprocessor HD68000 (MPU: Microprocessing Unit). The HDC connects the host system and the Winchester type hard
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D63463-
HD63463
16-bit
HD68000
HD684S0
ST506/ST412/ST412HP
DTP32
DTP16
DK812S
HD63463
HD63463P8
SMD SL
HD63463-8
SMD MARKING CODE 4E
sad1 smd
HD63463CP8
ST412 120
SMD HARD DISK CONTROLLER
BTM marking
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Untitled
Abstract: No abstract text available
Text: AUSTIN SEMICONDUCTOR, INC. SRAM 8K MT59 6428JL8.3£ 8 K x 8 SRAM X 8 SRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-38294, Class M • MIL-STD-883, Class B • Radiation tolerant consult factory FEATURES • High speed: 12, 15, 20, 25 and 35ns • Battery backup: 2V data retention
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MIL-STD-883,
MIL-STD-883
0000S53
10change
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H04-004-06
Abstract: fuji electric year month dc ampmeter Circuits 1000H H04-004 capacitor variator E66188 MS5K2564
Text: Re vised Re c o r d s Fuji Electric CaJJd. . — •— —i- - DW GJfO. | í si i M S5K 2 5 6 4 2/6 H04-004-06 X 1. SCOPE T h i s s p e c i f i c a t i o n p r o v i d e s t h e r a t i n g s and t e s t r e q u i r e m e n t s f o r FUJ
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H04-004-06
ENE241)
UL1414
E66188
UL1449
El23894
LR98228
H04-004-03
H04-004-06
fuji electric year month
dc ampmeter Circuits
1000H
H04-004
capacitor variator
E66188
MS5K2564
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Untitled
Abstract: No abstract text available
Text: — MT5C6401 883C 64K x 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 64K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-86015 • M IL-STD-883, Class B • Radiation tolerant (consult factory) 22-Pin DIP FEATURES • High speed: 12, 15, 20, 25 and 35ns
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MT5C6401
IL-STD-883,
22-Pin
IL-STD-883
TQQ2117
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Untitled
Abstract: No abstract text available
Text: MT5C128K8A1 RE VO LU T IO NA RY PINOUT 128K x 8 SRAM M IC R O N SRAM 128Kx 8 SRAM FEATURES • High speed: 12,15,20 and 25ns • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options • Automatic CE power down
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MT5C128K8A1
128Kx
32-Pin
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12T67
Abstract: bb2412 ipip3 T350 MARKING MHT siemens 1q B82412-A3100-M MMIC marking CODE cf fgmd d794
Text: GaAs MMIC SIEMENS P r e lim in a r y CMY 95 d a t a * G aAs mixer with integrated IF-amplifierer fo r mobile com m unication ‘ Frequency range 0.8 GHz to 2.5 GHz ‘ Very low power consumption 1mA lyp. * G ood intermodulatfon perform ance * Single positive supply voltage
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HLEHFD21/HB
12T67
bb2412
ipip3
T350
MARKING MHT
siemens 1q
B82412-A3100-M
MMIC marking CODE cf
fgmd
d794
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B2520
Abstract: 6c223
Text: /— > / - \ \ l S I I N S I MI C O N D I C l O K . INC SRAM M T 5 C 6 4 0 5 883C 16K X 4 S R A M 16K X 4 SRAM WITH OUTPUT ENABLE AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNM ENT Top View • SMD 5962-86859 • MIL-STD-883, Class B • Radiation tolerant (consult factory)
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MIL-STD-883,
24-Pin
MIL-STD-883
MT5CS406
B2520
6c223
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Untitled
Abstract: No abstract text available
Text: '\ A U S T I N S E M I C O N D U C T O R , I NC. MT5C2561 883C 256K x 1 SRAM ^ SRAM 256K x 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SM D 5962-88725,-88544 • M IL-STD -883, Class B • Radiation tolerant (consult factory)
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MT5C2561
24-Pin
28-Pin
HIL-STD-883
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5 PEN PC TECHNOLOGY advance
Abstract: No abstract text available
Text: ADVANCE M IC R O N 16 MEG X MT9D169 9 DRAM M OD ULE 16 MEG x 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process • Single 5V ±10% power supply
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MT9D169
30-pin
096-cycle
A0-A11
5 PEN PC TECHNOLOGY advance
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HA 1156 R
Abstract: MT5C2568DJ-20IT
Text: MICRON SEMICONDUCTOR INC b? E D WË blllSMT OOD'íBSG 0 5 4 • MT5C2568 32K X 8 SRAM I^IIC R O N SRAM 32K X 8 SRAM • High speed: 1 0 ,12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options
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MT5C2568
28-Pin
MT5C2566
HA 1156 R
MT5C2568DJ-20IT
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micron DRAM
Abstract: No abstract text available
Text: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access
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MT8D88C132H
MT16D88C232H
micron DRAM
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T2D48
Abstract: FPM DRAM 30-pin SIMM 0/MT2D48
Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE ¡V U C F O N DRAM MODULE IV IU U U L t. 4 MEG x 8 4 MEG ABYTE -5VFAST PAGE MODE FEATURES PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory module (SIMM) • High-perform ance CM O S silicon-gate process
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MT2D48
30-pin,
500mW
048-cycle
30-Pin
T2D48M-6
T2D48
FPM DRAM 30-pin SIMM
0/MT2D48
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T3D19
Abstract: 30-pin simm memory "16m x 8" MT4C1024DJ MT3019 MT4C4001 30-pin SIMM
Text: [M IC R O N 1 MEG X MT3D19 9 DRAM MODULE 1 MEG x 9 DRAM DRAM MODULE FAST PAGE MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 30-pin single-in-line memory module • High-performance, CM OS silicon-gate process
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MT3D19
30-pin
625mW
024-cycle
128ms
MT3D19)
T3D19
30-pin simm memory "16m x 8"
MT4C1024DJ
MT3019
MT4C4001
30-pin SIMM
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Untitled
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b3E J> 512K X • b 1 1 1 5 4‘i 0000021 bl3 ■ U R N MT16D T 51232 32, 1 MEG x 16 DRAM MODULE 512 K x 32,1 MEG X 16 DRAM MODULE FAST-PAGE-MODE (MT16D(T)51232) LOW POWER, EXTENDED REFRESH (MT16D(T)51232 L) FEATURES PIN ASSIGNMENT (Top View)
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MT16D
72-pin
424mW
512-cycle
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SE236
Abstract: No abstract text available
Text: M I CR ON S E M I C O N D U C T O R INC b7E D • b l l l S H T GQ0'ì37lì D7T H M R N ADVANCE MT5C512K8B2 512K X 8 SRAM M IC R SO N I FHCONfVICTOn INC SRAM 512Kx 8 SRAM FEATURES • High speed: 12,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal
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MT5C512K8B2
512Kx
36-Pin
MT5CS12K8B2
SE236
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