PMX15
Abstract: No abstract text available
Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm
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FPD750SOT89
FPD750SOT89E
FPD750SOT89CE
Pmx1500
FPD750SOT89ESR
FPD750SOT89EE
FPD750SOT89EPCK
FPD750SOT89EPCK-411
FPD750SOT89EPCK-412
FPD750SOT89ESQ
PMX15
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RF3931
Abstract: 46dBm
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS110317
46dBm
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smd marking AAAA
Abstract: AAAA mmic HL 30 MMIC marking 81 CGY94 Q68000-A9124 Siemens MMIC marking aaa marking AAAA
Text: GaAs MMIC CGY 94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V
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Q68000-A9124
smd marking AAAA
AAAA
mmic HL 30
MMIC marking 81
CGY94
Q68000-A9124
Siemens MMIC
marking aaa
marking AAAA
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Rfbpf2012090A2
Abstract: RFDIP1608060TM7T62 RFBPF2012100K3T ISO103
Text: Table of Contents www.passivecomponent.com INDEX Subject Page ORDERING CHIP
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400MHz
SG24-L
EMVCo/ISO10373-6
Rfbpf2012090A2
RFDIP1608060TM7T62
RFBPF2012100K3T
ISO103
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GaN ADS
Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
EAR99
RF3931
130mA
DS101115
GaN ADS
ATC800B
ATC800B120
ATC800B6R8
ECE-V1HA101UP
ERJ8GEYJ100V
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MMIC marking code S2
Abstract: SIEMENS MMIC powaramp ta CGY94 Q68000-A9124 CGY so SMD F09
Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for G SM or A M PS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V ' 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 £î, simple output match
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CGY94
Q68000-A9124
577ms
235bD5
MMIC marking code S2
SIEMENS MMIC
powaramp ta
CGY so
SMD F09
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V * 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 ft, simple output match
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CGY94
Q68000-A9124
fl235b05
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