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    900V N-CHANNEL QFET Search Results

    900V N-CHANNEL QFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    900V N-CHANNEL QFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQB2NA90

    Abstract: FQI2NA90
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQI2NA90

    SSF7N90A

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFET SSF7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		PDF SSF7N90A SSF7N90A

    SSH10N90A

    Abstract: MOSFET 10A
    Text: N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		PDF SSH10N90A SSH10N90A MOSFET 10A

    Untitled

    Abstract: No abstract text available
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQB2NA90TM O-263

    Untitled

    Abstract: No abstract text available
    Text: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQB2NA90 FQI2NA90 FQI2NA90TU O-262 FQI2NA90

    FQPF4N90

    Abstract: No abstract text available
    Text: QFET TM FQPF4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF4N90 O-220F FQPF4N90

    SSH7N90A

    Abstract: SSH7N90
    Text: N-CHANNEL POWER MOSFET SSH7N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V


    Original     		PDF SSH7N90A SSH7N90A SSH7N90

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4N90 FQI4N90 FQB4N90TM O-263

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQB6N90TM O-263

    FQB4N90

    Abstract: FQI4N90
    Text: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4N90 FQI4N90 FQI4N90

    FQA9N90

    Abstract: FQA9N90 equivalent
    Text: QFET TM FQA9N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA9N90 FQA9N90 FQA9N90 equivalent

    FQA7N90

    Abstract: No abstract text available
    Text: QFET TM FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA7N90 FQA7N90

    FQAF7N90

    Abstract: 900V N-Channel QFET
    Text: QFET TM FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF7N90 FQAF7N90 900V N-Channel QFET

    Untitled

    Abstract: No abstract text available
    Text: QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N90C/FQPF8N90C O-220 FQP8N90C/FQPF8N90C

    FQA7N90M

    Abstract: No abstract text available
    Text: QFET TM FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA7N90M FQA7N90M

    FQP4N90

    Abstract: IRF 450 MOSFET
    Text: QFET TM FQP4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP4N90 FQP4N90 IRF 450 MOSFET

    FQPF8N90C

    Abstract: mosfet 8A 900V TO-220
    Text: QFET FQP8N90C/FQPF8N90C 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP8N90C/FQPF8N90C FQP8N90C/FQPF8N90C FQPF8N90C mosfet 8A 900V TO-220

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4N90 FQI4N90 FQI4N90TU O-262 FQI4N90

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4N90 FQI4N90

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQI6N90TU O-262 FQI6N90

    61mH

    Abstract: FQB4N90 FQI4N90
    Text: QFET TM FQB4N90 / FQI4N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB4N90 FQI4N90 61mH FQI4N90

    FQB6N90

    Abstract: FQI6N90
    Text: QFET TM FQB6N90 / FQI6N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize


    Original     		PDF FQB6N90 FQI6N90 FQI6N90

    FQAF5N90

    Abstract: No abstract text available
    Text: FQAF5N90 September 2000 QFET TM FQAF5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQAF5N90 FQAF5N90

    fqpf3n90

    Abstract: No abstract text available
    Text: FQPF3N90 September 2000 QFET TM FQPF3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQPF3N90 fqpf3n90