P-Channel IGBT
Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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9016 transistor
Abstract: F 9016 transistor npn 9016 transistor
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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npn 9016 transistor
Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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transistor mje340
Abstract: MJE340 b c e MJE340
Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E 2.25 Typical
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MJE340
O-126
transistor mje340
MJE340 b c e
MJE340
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BC477
Abstract: 358 IC datasheet BC477
Text: BC477 General Purpose Transistors Absolute Maximum Ratings Ta = 25°C Parameter Symbol Value Collector-Emitter Voltage VCES 90 Collector-Emitter Voltage VCEO 80 Emitter Base Voltage VEBO 6.0 IC 150 mA Ptot 0.3 1.20 W Tj 200 Tstg -55 to +200 Junction to Case
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BC477
BC477
358 IC
datasheet BC477
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BU208D
Abstract: NPN Transistor 1500V 20a H 9645
Text: BU208D Horizontal Deflection Transistor NPN Silicon Horizontal Defection Transistors with integrated damper diodes are specifically designed for use in large screen colour deflection circuits. Features: • VCES = 1500V VCEO sus = 700V (Minimum). • Low Saturation
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BU208D
BU208D
NPN Transistor 1500V 20a
H 9645
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equivalent transistor 2n3704
Abstract: T2N3705 2N3704 2N3705 T2N3704
Text: T2N3704, T2N3705 Series Bipolar Transistors Description: NPN Silicon Planar Epitaxial Transistors. TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H 5° 1.14 1.40 1.53 K 12.70 - L 1.982 2.082
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T2N3704,
T2N3705
equivalent transistor 2n3704
2N3704
2N3705
T2N3704
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transistor BC461
Abstract: BC461 BC461 transistor CHARACTERISTICS OF BC461
Text: BC461 Medium Power Transistor Features: • High performance, low frequency devices typically with current ratings 2A. Up to 1W power dissipation. • PNP Epitaxial Planar Silicon Transistors. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39
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BC461
transistor BC461
BC461
BC461 transistor
CHARACTERISTICS OF BC461
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MJE340
Abstract: MJE340 datasheet MJE340 b c e
Text: MJE340 Medium Power NPN Transistors Features: • NPN Plastic Medium Power Silicon Transistor. • Useful for High Voltage General Purpose Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0.7 0.9 E F 2.25 Typical
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MJE340
O-126
MJE340
MJE340 datasheet
MJE340 b c e
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MPSA14
Abstract: transistor 7333
Text: MPSA14 NPN Darlington Transistor TO-92 Plastic Package Dimensions Minimum Maximum A 4.32 5.33 B 4.45 5.20 C 3.18 4.19 D 0.41 0.55 E 0.35 0.50 F G H K 5° 1.40 1.14 1.53 12.70 Dimensions : Millimetres Pin Configuration 1. Collector 2. Base 3. Emitter Page 1
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MPSA14
MPSA14
transistor 7333
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MJE350 b c e
Abstract: Power Transistors TO-126 Case MJE350
Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
MJE350 b c e
Power Transistors TO-126 Case
MJE350
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8805 VOLTAGE REGULATOR
Abstract: MJE350 b c e MJE350 pnp mje350
Text: MJE350 Medium Power PNP Transistors Features: • PNP Plastic Medium Power Silicon Transistor. • Designed for use Line-Operated Applications Such as Low Power, Line Operated Series Pass and Switching Regulator Requiring PNP Capability. TO-126 Plastic Package
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MJE350
O-126
8805 VOLTAGE REGULATOR
MJE350 b c e
MJE350
pnp mje350
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transistor 2N5415
Abstract: 2N5415 ic tc 4066 diagram
Text: 1611580 Feature: • PNP transistors. Description: The 2N5415 are high voltage silicon epitaxial planar PNP transistors in JEDEC TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and
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2N5415
2N5415
transistor 2N5415
ic tc 4066 diagram
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7333 A
Abstract: Power Transistors TO-126 Case farnell ic 901 BD437
Text: BD437 Medium Power Transistors General Purpose TO-126 Features: • NPN Plastic Medium Power Silicon Transistors. • Intended for use in Medium Power Linear Switching Applications. TO-126 Plastic Package Dimensions Minimum Maximum A 7.4 7.8 B 10.5 10.8 C
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BD437
O-126
O-126
7333 A
Power Transistors TO-126 Case
farnell
ic 901
BD437
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diode st 4148
Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)
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MMBT8050LT1
OT-23)
-LL4001-LL4007
-LL4148
1N4001-1N4007
diode st 4148
ST 4148
LL4148 st
8050 sot-23
st 8050
9016 transistor
9014 SOT 23
4148 st
TRANSISTOR 4148
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JE9016
Abstract: A78G
Text: NPN SILICON TRANSISTOR ELECTRON DEVICE JE9016 DESCR IPTIO N The JE 9016 is designed fo r use in A M converter and FM PAC K A G E D IM E N S IO N S in m illim e ters lin ch es 5.2 MAX. RF am p lifie r o f low noise. FE A TU R E S • High to ta l power dissipation. Py : 400 mW)
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JE9016
JE9016
A78G
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transistor c 9018
Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Text: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF
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T0-92B
500fi
10kfi
transistor c 9018
Transistor CL 100
9011 9012 9013 9014 9018
transistor 9014 NPN
transistor 9013 NPN audio output
V. 9014 c
9016 transistor
audio output TRANSISTOR NPN 9013
9011 NPN transistor
npn 9016 transistor
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AM9016
Abstract: AM9016EPC AM9016DPC AM9016FPC AM9016EDC AM9016CPC AM9016DDC AM9016CDC AM9016FDC am9016e
Text: Am9016 16,384 x 1 D ynam ic R/W Random A ccess M em ory DISTINCTIVE CHARACTERISTICS G E N E R A L D ESCRIPTIO N • • • The A m 9016 is a high speed, 16 k-bit, dynam ic, read/w rite random access m em ory. It is organized as 16,384 words by 1 b it per w ord and is packaged in a standard 16-pin DIP. The
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MK4116
462mW
150ns
320ns
16-pin,
MIL-STD-883
Am9016
16k-bit,
AM9016EPC
AM9016DPC
AM9016FPC
AM9016EDC
AM9016CPC
AM9016DDC
AM9016CDC
AM9016FDC
am9016e
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CP1005
Abstract: 9011 9012 9013 9014 9018 C 9014 transistor transistor 9014 C npn 9011 NPN transistor 9011 transistor 9015 PNP 9016 9013 NPN Output Transistor transistor npn c 9014
Text: fi* £ ,. ¿YrA \ *j i w 'äf? m m H :;1 i Ä \jif- ^ s •'«•J-, m &3W^m¡jfir . Ï 'iS.fi. I FM SERIES AM. FM RADIO TRANSISTOR KIT - ^ttk SELECTION AIV! K M 9000 ¡8a¡$ W bJ . GUIDE FOR RADIO TRANSISTOR KIT Output KM 9012 AM RECEIVER? y Conv. IF KM901I
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KM90II
KM90I5
KM901I/8
KM90II/8
KM90I4
KM9015
KM90I:
KM90i
to-92a
CP1005
9011 9012 9013 9014 9018
C 9014 transistor
transistor 9014 C npn
9011 NPN transistor
9011 transistor
9015 PNP
9016
9013 NPN Output Transistor
transistor npn c 9014
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9014 ch
Abstract: transistor npn c 9014 9018 transistor transistor c 9018 9011 9012 9013 9014 9018 100-10L 9018 transistor 9013 NPN audio output 9011 9012 pnp transistor
Text: »v'.-T i V.y*, 7 “ •1 v í- j m £?| P Im I I I m . C-iS.fi w - f , , :;1 | AM. FM RADIO TRANSISTOR KIT „ L’ J V->.' ., t« V SELECTION CUIDE FOR FIVI RADIO TRANSISTOR KIT A IVI Output KM 9012 AM RECEIVER w AF Amp- IF 2 IF Conv. SP. KM90J4 KM 9011
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O-92A
9014 ch
transistor npn c 9014
9018 transistor
transistor c 9018
9011 9012 9013 9014 9018
100-10L
9018
transistor 9013 NPN audio output
9011
9012 pnp transistor
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9011 9012 9013 9014 9018
Abstract: 9011 NPN transistor transistor c 9018 npn 9016 transistor F 9016 transistor transistor 9014 C npn C 9014 transistor 9018 transistor 9016 transistor pnp transistor 9015
Text: 'ty i / >; •i CL9000 i ÎÏ t it -V, 1'* r-t, *i *Vj 1t E i SERIES AM FM RADIO TRANSISTOR KIT G U ID E SELECTION FOR AM / FM RADIO TRANSISTOR KIT Output AM R EC EIV ER? Y _ son IF2 IF1 Conv. H 90 H 9012 AF Amp. 9014 M 90U SP. or <1 :9015 9013 Output FM R EC EIV ER
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CL9000
T0-92B
10kfi
9011 9012 9013 9014 9018
9011 NPN transistor
transistor c 9018
npn 9016 transistor
F 9016 transistor
transistor 9014 C npn
C 9014 transistor
9018 transistor
9016 transistor
pnp transistor 9015
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transistor 716-analog
Abstract: 500MSPS AD9006
Text: □ ANALOG DEVICES FEATURES 500MSPS Encode Rate Very Low Input Capacitance: 8pF 30dB SNR @ 200MHz Analog Input MIL-STD-883 Available Bipolar Input Range ± 1 V Demultiplexed Outputs (AD9016) MIL-STD-883-Compliant Versions Available High Speed 6-Bit A/D Converters
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AD9006/AD9016
500MSPS
200MHz
MIL-STD-883
AD9016)
MIL-STD-883-Compliant
AD9006
AD9016
500MSPS.
transistor 716-analog
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