ic 1496 specifications
Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7.5dB typ
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ENN4759
2SC4855
S21e2
2SC4855]
ic 1496 specifications
2SC4855
ITR07603
ITR07604
ITR07605
ITR07606
ITR07607
CE1M
KT 1117
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ
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ENN4759
2SC4855
S21e2
2SC4855]
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2042B
Abstract: 2SC4660 EN4692
Text: Ordering number:EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2042B
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EN4692
2SC4660
300mA)
2042B
2SC4660]
O-126ML
2042B
2SC4660
EN4692
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2SC4865
Abstract: No abstract text available
Text: Ordering number:EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : S21e2=12.5dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ.
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EN4760
2SC4865
S21e2
2SC4865]
2SC4865
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2SC4660
Abstract: No abstract text available
Text: Ordering number:EN4692 NPN Epitaxial Planar Silicon Transistor 2SC4660 High-Definition CRT Display Video Output Driver Applications Features Package Dimensions • High fT fT=2.2GHz typ · Large current (IC=300mA) · Adoption of FBET process. unit:mm 2042B
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EN4692
2SC4660
300mA)
2042B
2SC4660]
O-126ML
2SC4660
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BX-1387
Abstract: BX1387 2097B 2SB1121 FP208
Text: Ordering number:EN4535A FP208 PNP Epitaxial Planar Silicon Transistor Driver Applications Features Package Dimensions • Composite type with 2 PNP transistors in one package, facilitating high-density mounting. · The FP208 is composed of 2 chips each equivalent
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EN4535A
FP208
FP208
2SB1121.
2097B
FP208]
BX-1387
BX1387
2097B
2SB1121
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2SD2251
Abstract: No abstract text available
Text: Ordering number:EN3741A NPN Triple Diffused Planar Silicon Transistor 2SD2251 Color TV Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).
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EN3741A
2SD2251
100ns
2039D
2SD2251]
2SD2251
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2SC4865
Abstract: No abstract text available
Text: Ordering number:EN4760 NPN Epitaxial Planar Silicon Transistor 2SC4865 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.1dB typ f=1GHz . · High gain : S21e2=12.5dB typ (f=1GHz). · High cutoff frequency : fT=7.0GHz typ.
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EN4760
2SC4865
S21e2
2SC4865]
2SC4865
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EN4759
Abstract: UA 324 cn 2SC4855 ic 1496 specifications
Text: Ordering number:EN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current& High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ
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EN4759
2SC4855
S21e2
2SC4855]
EN4759
UA 324 cn
2SC4855
ic 1496 specifications
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EN4759
Abstract: 2SC4855 ZS22 2SC485 MARKING CN
Text: Ordering number: EN4759 No.4759 _ 2SC4855 NPN Epitaxial Planar Silicon Transistor Low-Voi tage, Low-Current&HighFrequency Amp Applications Features • Low-voltage, low-current operation : fx = 5GHz typ. VCE = lV ,Ic = lmA : I S21e I 2=7.5dB typ (f= 1GHz).
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EN4759
2SC4855
EN4759
2SC4855
ZS22
2SC485
MARKING CN
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J31C
Abstract: transistor 9ct 2SC4865 ZS22 IC A 2388 ic 4072 npn 9ct
Text: Ordering number: EN4760 No.4760 i II_2SC4865 NPN Epitaxial Planar Silicon Transistor SAXYO i VHF to UHF Wide-Band Low-Noise Amp Applications F e a tu re s • Lownoise : NF = l.ld B typ f=lGH z . •H igh gain: 1 S21e I 2= 12.5dB typ (f=lGHz).
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EN4760
2SC4865
J31C
transistor 9ct
ZS22
IC A 2388
ic 4072
npn 9ct
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2SD2251
Abstract: n037
Text: Ordering num ber: EN3741A _ 2SD2251 NPN Triple Diffused Planar Silicon Transistor Color TV H orizontal Deflection O utput Applications F e a tu r e s •High speed tf= 100ns typ . ■High breakdown voltage (Vc b o —1500V). ■High reliability (Adoption of HVP process).
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EN3741A
2SD2251
100ns
n037
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN3741A 2SD2251 N 0.374IA I NPN Triple Diffused Planar Silicon Transistor SAXYO Color TV Horizontal Deflection Output Applications F e a tu r e s •H igh speed tf= 100ns typ . ■.H igh breakdow n voltage (V c b o = 1500V). • H igh reliab ility (Adoption of HVP process).
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EN3741A
2SD2251
374IA
100ns
2039D
T03PM
90794MT
BX-0937,
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN4668 No.4668 II _ ;_ 2SA1723 PNP Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications Applications • Wideband amplifiers. • High-frequency drivers. Features • High fr fr = 1.5GHz typ .
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EN4668
2SA1723
300mA)
300mA
100mA
100mA
2009B
O-126
90794MT
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2SA1723
Abstract: No abstract text available
Text: Ordering num ber:EN4668 _ 2SA1723 PNP Epitaxial Planar Silicon Transistor High-Frequency Amp, Medium-Power Amp Applications Applications •Wideband amplifiers. ■High-frequency drivers. Features ■High f'f fr = 1.5GHz typ . ■High current (lc = 300mA).
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EN4668
2SA1723
300mA)
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BX-1387
Abstract: 4535A BX1387
Text: Ordering number: EN 4535A FP208 No.4535A PNP Epitaxial P lanar Silicon Transistor SAIÊYO i Driver Applications F eatu re s • Composite type with 2 PNP transistors in one package,facilitating high-density mounting. •The FP208 is composed of 2 chips each equivalent to the 2SB1121.
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FP208
FP208
2SB1121.
250mm2X
250mm
BX-1387
4535A
BX1387
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2042B
Abstract: c 4692 transistor 2SC4660 EN4692
Text: Ordering number:EN4692 2SC4660 No.4692 NPN Epitaxial Planar Silicon Transistor High-Defmition CRT Display Video Output Applications F eatu res • H ighfr fr = 2.2GHztyp . • High current (Ic = 300mA). • Adoption of FBET process. A bsolute M axim um R atings at Ta = 25°C
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EN4692
2SC4660
300mA)
Vcb-20V
0DE0502
2042B
c 4692 transistor
2SC4660
EN4692
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