Apacer
Abstract: ata controller ssd block diagram of sata SSD drive APSDM032G15AD-ACM APSDM032G15AN-ACM ap-sdm128
Text: RoHS Compliant SATA-Disk Module 4 SDM4-M 22P/90D Product Specifications November 30th, 2011 Version 1.1 Apacer Technology Inc. 4th Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889
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22P/90D
APSDMxxxx15Ax-ACMX
Apacer
ata controller ssd
block diagram of sata SSD drive
APSDM032G15AD-ACM
APSDM032G15AN-ACM
ap-sdm128
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Untitled
Abstract: No abstract text available
Text: RoHS Compliant SATA-Disk Module 4 SDM4 22P/90D Product Specifications December 1st, 2011 Version 1.0 Apacer Technology Inc. 4th Fl., 75 Hsin Tai Wu Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889
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22P/90D
APSDMxxxx15Ax-AXX
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Untitled
Abstract: No abstract text available
Text: RoHS Compliant Value Added SATA-Disk Module I Specification for 22P/90D March 1, 2011 Version 1.1 Apacer Technology Inc. th th 4 Fl., 75 Xintai 5 Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Value Added SATA-Disk Module I
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22P/90D
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Untitled
Abstract: No abstract text available
Text: Halogen Free Value Added SATA-Disk Module I Specification for 7P/90D March 1, 2011 Version 1.1 Apacer Technology Inc. th th 4 Fl., 75 Xintai 5 Rd., Sec.1, Hsichih, New Taipei City, Taiwan 221 Tel: +886-2-2698-2888 www.apacer.com Fax: +886-2-2698-2889 Value Added SATA-Disk ModuleⅠ
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7P/90D
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SSD20N06-90D
Abstract: MosFET 90D 22
Text: SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS ON 94 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density
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SSD20N06-90D
O-252
te300
30-Aug-2010
SSD20N06-90D
MosFET
90D 22
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Abstract: No abstract text available
Text: SUM90N06-4m4P Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • 175 °C Junction Temperatur RoHS • 100 % Rg and UIS Tested COMPLIANT
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SUM90N06-4m4P
O-263
SUM90N06-4m4P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUM90N10-8m2P
O-263
SUM90N10-8m2P-E3
08-Apr-05
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74641
Abstract: SUP90N06-5M0P
Text: SUP90N06-5m0P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.005 at VGS = 10 V 90d 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT
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SUP90N06-5m0P
O-220AB
SUP90N06-5m0P-E3
18-Jul-08
74641
SUP90N06-5M0P
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} "TD DE| TO^HSO 9097250 TOSHIBA DISCRETE/OPTO tfosììUk ODlbBlS 90D 163 15 3 DT- 33-35 SEMICONDUCTOR TOSHIBA G-TR MODULE TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG25M2CK2
50/ia1
EGA-MG25M2CK2-4
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PC 181 OPTO
Abstract: MG50N2YS1 16175 MU51
Text: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm
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ciGci72S0
DDlbl74
MG50N2YS1
EGA-MG50N2YS1-4
DT-33
MG50N2YS1
EGA-MG50N2YS1-
PC 181 OPTO
16175
MU51
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BYP59-300M
Abstract: BYP59-300U TO227
Text: ! N AMER PHILIPS/DISCRETE DEVELOPMENT DATA TOD D 90D • bbSBTBl OOlOSSt T '- ¿ > 2 - 10226 a -/ BYP59 SERIES T h is data sheet contains advance information end specifications are subject to change without notice. ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE
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BYP59
100AAis;
BYP59-300M
BYP59-300U
TO227
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md 5408
Abstract: MG300G1UL1 MG300H1UL1 MG300 4.90g transistor ES300
Text: TOSHIBA - C D I S CRETE/OPTO} TO 9097250 TOSHIBA DISCRETE/OPTO TOSH IBA DE | TQT75S0 001b03fl 3 90D 16038 SEMICONDUCTOR 0 7-53-3^* TOSHIBA GTR MODULE MG300G1UL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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tqt75s0
001l03a
MG300G1UL1
09A1A
MG300H1UL1-4
md 5408
MG300H1UL1
MG300
4.90g transistor
ES300
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56264b
Abstract: 56264a BYP59-300M BYP59-300U 10226D m1247
Text: bbSBTBl OOlOSSb T TGD D N AMER PHILIPS/DISCRETE 90D 1 0 2 2 6 DEVELOPMENT DATA D ^ BYP59 SERIES This data sheet contains advance information and specifications are subject to change without notice. ULTRA FAST RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE
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00102Sb
BYP59
M1247
56264b
56264a
BYP59-300M
BYP59-300U
10226D
m1247
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Untitled
Abstract: No abstract text available
Text: TO TOSHIBA {D ISCR ET E/OPTO} D E j IGTTaSG Q01bl54 7 | 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA 90D SEMICONDUCTOR 16124 T~3?-27 D TOSHIBA GTR MODULE M625H2YS1 TECHNICAL DATA SILICON N CHANNEL 1GBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.
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Q01bl54
M625H2YS1
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U4985
Abstract: No abstract text available
Text: For Immediate Assistance, Contact your Local Salesperson 14-Bit 5.12MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SPURIOUS-FREE DYNAMIC RANGE: -90d B L Grade • WIDEBAND SAMPLE/HOLD: 60MHz • SAMPLE RATE: DC to 5.12MHz • HIGH SIGNAL/NOISE RATIO: 78dB
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14-Bit
12MHz
60MHz
12MHz
46-PIN
ADC614
17313bS
U4985
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zener 1N4 diode
Abstract: 1N4896 1N4896A 1N4897 1N4897A 1N4898 1N4898A 1N4899 1N4899A 1N4900
Text: 1775470 C O D I SEMICONDUCTOR INC . TD m 90D 00569 D -y— //-// T | 177S470 ODODSbT 2 | ~ T *T ± m *r\ CODI Semiconductor, Inc. 1N4896 thru 1N4915A ' 12.8 VOLT NOMINAL ZENER VOLTAGE ±5% > TEMPERATURE COMPENSATED ZENER REFERENCE DIODES > LOW NOISE «MAXIMUM RATINGS
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177S470
1N4896
1N4915A
500mW
1N4896
1N4899
1N4900
1N4903
1N49G
zener 1N4 diode
1N4896A
1N4897
1N4897A
1N4898
1N4898A
1N4899
1N4899A
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Untitled
Abstract: No abstract text available
Text: TOSHIBA { D IS CR ETE/O PT O} ^0 D E I TDTTSSO DOlbOTñ 4 90D 16078 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A SEMICONDUCTOR DT ' ^ 3 - 3 5 TOSHIBA GTR MODULE MG75Q2YK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS.
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MG75Q2YK1
Icc75A)
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Untitled
Abstract: No abstract text available
Text: qg TOSHIBA ÍDISCRETE/OPTOJ9097250 TOSHIBA TOSHIBA D E ] ^ 0 ^ 7 5 5 0 DD]jb3D7 H | 90D CDIS C R E T E /OPTO SEMICONDUCTOR 16307 DT-33-3S’ TOSHIBA GTR MODULE •MG-20Q6EK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.
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DISCRETE/OPTOJ9097250
DT-33-3Sâ
MG-20Q6EK1
hFEc100
MG20Q6EK1-1
TCH72SG
DDlb30Ã
iG20Q6F
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mg15n2
Abstract: No abstract text available
Text: TO TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E | TDTTESO 001bDS4 1 DT"33-3 5 90D 16054 SEMICONDUCTOR TOSHIBA GTR MODULE M G 1 5 N 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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001bDS4
MG15N2YK1
mg15n2
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Untitled
Abstract: No abstract text available
Text: "TD TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA Difjj TtHTSSO D01ti070 D 90D 16070 SEMICONDUCTOR DJ-33-3S TOSHIBA GTR MODULE TECHNICAL DATA MG50Q2YK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm
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D01ti070
DJ-33-3S
MG50Q2YK1
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KENILWORTH
Abstract: 1N4942 1N4944 1N4946 1N4947 1N4948
Text: 90D 00599 177S470 C O D I SEMICONDUCTOR INC ll.l •ÌD- I E|i 77SM7D DOOOSTT □ | ~ lîüHilîfj CODI Semiconductor, Inc. FAST SWITCHING PLASTIC RECTIFIER 1N4942 thru 1N4948 VOLTAGE RANGE 200 to 1000 Volts CURRENT 1.0 Ampere FEATURES • High surge current capability.
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177S470
I77SM7D
1N4942
1N4948
DO-41
MIL-STD-19500/228.
MIL-STD-202,
25Vdc
50/100nÂ
1-800-232-CQDI
KENILWORTH
1N4944
1N4946
1N4947
1N4948
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DGB25F
Abstract: Q9300J Q2200J Q3400J Q4900J Q6200J Q8000J
Text: APPLIED MICRO CIRCUITS TO SE I 000=1002 00003ti0 a DEVICE SPECIFICATION — f APPLIED MICRO CIRCUITS CORPORATION 088900 2 APPLIED MICRO CIRCUITS 90D 00 36 0 D it'09 Q9000 SERIES CMOS LOGIC ARRAYS FEATURES TECHNOLOGY Q9000 Series arrays feature 1,5-micron silicon-gate CMOS with
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Q9000
Q2200J
Q8000J.
1N916
1N3064
DGB25F
Q9300J
Q3400J
Q4900J
Q6200J
Q8000J
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MG20G6EL1
Abstract: MG20G6ELI MG20G4GL1 MG20G4GLI DT-33-35 MG20G6EL1 circuit HT 16218
Text: TOSHIBA -CDISCRETE/OPTO} T O D EJTEH V aSD O D lbElB b 9097250 TOSHIBA <DISCRETE/OPTO mm 90D 16213 TOSHIBA GTR MODULE SEMICONDUCTOR HBNHI DT-33-3S MG20G4GL1 TECHNICAL DATA MG20G6EL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING A PPLICATIO NS. MOTOR CONTROL APPLICATIO NS.
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MG20G4GL1
MG20G6EL1
DT-33-3Â
MG20G4GL1
MG20G6EL1
DT-33-35"
MG20G4GLI
MG20G6ELI
MG20G6ELI
DT-33-35
MG20G6EL1 circuit
HT 16218
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IN5522b
Abstract: Codi Semiconductor IN5529B IN5530B IN5525B IN5521B IN5524B in5523b IN551 IN5518
Text: ~ dF | i 7?SM70 0 Q D 0 S 7 7 1 1775470 C O D I SEMICONDUCTOR INC II 90D 00577 D JANTXIN5518B through JANTXIN5528B LOW NOISE VOLTAGE REGULATOR DIODES CODI Semiconductor Inc. '|T LOW NOISE LOW VOLTAGE REGULATOR DIODES to MIL-S-19500/437 PLEASE «0TE4°SuCT0RC WCGE
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JANTXIN5518B
JANTXIN5528B
MIL-S-19500/437
IN5521B
IN5522B
IN5523B
IN5524B
IN5525B
IN5526B
IN5527B
Codi Semiconductor
IN5529B
IN5530B
IN551
IN5518
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