IRG4BC40F
Abstract: No abstract text available
Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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Original
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PDF
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91454B
IRG4BC40F
O-220AB
O-220AB
C252-7105
IRG4BC40F
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Untitled
Abstract: No abstract text available
Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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Original
|
PDF
|
91454B
IRG4BC40F
O-220AB
O-220AB
|
IRG4BC40F
Abstract: No abstract text available
Text: PD - 91454B IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
|
Original
|
PDF
|
91454B
IRG4BC40F
O-220AB
O-220AB
IRG4BC40F
|