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    IRG4PC30F

    Abstract: No abstract text available
    Text: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91459B IRG4PC30F O-247AC O-247AC IRG4PC30F

    IRG4PC30F

    Abstract: No abstract text available
    Text: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91459B IRG4PC30F O-247AC O-247AC IRG4PC30F

    Untitled

    Abstract: No abstract text available
    Text: PD 91459B IRG4PC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 91459B IRG4PC30F O-247AC O-247AC