IRG4PH40UD
Abstract: 100v 40a bridge st
Text: PD- 91621C IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than
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Original
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PDF
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91621C
IRG4PH40UD
O-247AC
IRG4PH40UD
100v 40a bridge st
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IRG4PH40
Abstract: 800v irf IRG4PH40UD igbt 800v 80a
Text: PD- 91621C IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than
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Original
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PDF
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91621C
IRG4PH40UD
O-247AC
IRG4PH40
800v irf
IRG4PH40UD
igbt 800v 80a
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Untitled
Abstract: No abstract text available
Text: PD- 91621C IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter
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Original
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PDF
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91621C
IRG4PH40UD
O-247AC
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